CMOS 80 K-300 K SPICE Parameter for IRFPA Readout Circuit Design

Abstract

Abstract. This work presents the low temperature characteristics of commercial complementary-mentaloxide-semiconductor devices, which may be used in the readout electronics of the infrared focal plane array detector. Measurements are performed with the temperature calibration of the device under test. Two most important temperature dependent parameters of the drain current characteristics of the device, the threshold voltage and the carrier mobility are studied. Carrier fteeze out effect is considered in the threshold voltage calculation. Two kinds of empirical carrier mobility model are studied, and better model is included in the SPICE mobility model. A revised SPICE MOS level 3 parameter extraction scheme is proposed to extract new mobility model parameters.

Modeling of an integrated active feedback preamplifier in a 0.25 /spl mu/m CMOS technology at cryogenic temperatures

“…By doing some measurements on single MOS transistor and extracting the transconductance parameter , it is found that by decreasing the temperature from 300 to 70 K, the mobility increases by a factor of 5 for NMOS transistors and by a factor of 2.85 for PMOS transistors, as shown in Table I. The suggested empirical models for mobility at low temperatures can be found in [11].…”