Abstract. This work presents the low temperature characteristics of commercial complementary-mentaloxide-semiconductor devices, which may be used in the readout electronics of the infrared focal plane array detector. Measurements are performed with the temperature calibration of the device under test. Two most important temperature dependent parameters of the drain current characteristics of the device, the threshold voltage and the carrier mobility are studied. Carrier fteeze out effect is considered in the threshold voltage calculation. Two kinds of empirical carrier mobility model are studied, and better model is included in the SPICE mobility model. A revised SPICE MOS level 3 parameter extraction scheme is proposed to extract new mobility model parameters.

An anomalous hole mobility degradation effect at low temperature and low gate overdrive of a compensated p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET) is reported. Measurements are performed with great care, including the temperature calibration of the device and measurement timing control to exclude unwanted self-heating effect. Methods to determine threshold voltage and effective mobility are discussed. The anomalous effect can be explained by the trapping or freezing out of the electrons ionized from donor level at the acceptor site. The additional charged center enhances the Coulomb scattering of conducting holes that are transported in this region.

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The objective of this study is to conduct two different teaching methods, Expository Method and Peer's Instruction Method, on two sessions and to assess the effectiveness of two teaching methods, and also to compare the Physics background of the ROC naval cadets with those of USA college students. Preliminarily we find the Peer Instruction method is a better way to improve the Physics concepts. ROC cadets are on the verge of understanding Physics. Also the strict limitation imposed by the military environment on the cades' life plays a critical role in our teaching strategy.