CMOS-compatible batch processing of monolayer MoS<sub>2</sub>MOSFETs

Xiong, Kuanchen; Kim, Hyun; Marstell, Roderick J.; Göritz, Alexander; Wipf, Christian; Li, Lei; Park, Jihoon; Luo, Xi; Wietstruck, Matthias; Madjar, A.; Strandwitz, Nicholas C.; Kaynak, Mehmet; Lee, Young Hee; Hwang, J.C.M.

doi:10.1088/1361-6463/aab4ba

Cited by 19 publications

(11 citation statements)

References 13 publications

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“…However, so far, only a few large-scale production methods combining van der Waals epitaxy and standard semiconductor processing have been reported. [19][20][21] There is a variety of 2D crystal growth techniques which has been studied for the synthesis of 2D materials over large areas: chemical vapor deposition (CVD), [22] physical vapor deposition (PVD) [23] , pulsed-laser deposition (PLD), [24] and molecular beam epitaxy (MBE). [25] CVD shows excellent growth uniformity for few layers growth, but defect and impurity densities can be high due to the use of gas carriers with extrinsic elements.…”

Section: Introductionmentioning

confidence: 99%

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Wafer‐Scale Fabrication of 2D β‐In₂Se₃ Photodetectors

Claro

Grzonka

Nicoara

et al. 2020

Advanced Optical Materials

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Nevertheless, the research of 2D materials is still in its early stages. The field started with graphene several years ago, [3] but more materials have been added continuously to the list. Among these, transition metal dichalcogenides (TMDC), [4] which have impressive optical properties in the visible range, are currently one of the most studied 2D materials. Devices made of these materials have shown remarkable performance as photodetectors, [5,6] nonvolatile random access memory, [7] or photovoltaics, [8] even when using simple manual exfoliation methods. More recently, 2D indium selenides (In x Se y) have gained attention, [9] due to their bandgap in the visible spectral region, comparable to TMDCs, but also due to several novel properties: InSe exhibits one of the largest mobilities of 2D semiconductor materials, [10] and β-In 2 Se 3 shows good mobility, [11] excellent photoresponsivity, [12] and exotic ferroelectricity [13] (the ordered ferroelectric phase is also called β′-In 2 Se 3 by some authors). [11,13] Transistors with high mobility and on/off ratio have already been realized. [14] Therefore, 2D In 2 Se 3 materials have the potential to address several limitations of the current silicon (Si) and III-V technologies, such as improved mobility and overall performance of transistors for electronics, as well as integrated photodetectors and light emitters in the same material system (same die), all possible on virtually any substrate, including transparent and flexible substrates. [15,16] Yet, the majority of reported devices from 2D materials rely on fabrication methods based on exfoliation and transfer of layers onto other substrates or other 2D materials. While this device fabrication process allows unprecedented flexibility in the combination of materials and therefore has nearly unlimited device design possibilities, [1] it leads typically to individual or few devices and is a slow and tedious process. On the other hand, due to their layered nature, instead of strong covalent bonds (as in Si and compound semiconductors) van der Waals forces exist between the layers. Hence, 2D materials can be grown epitaxially on substrates with completely different lattice constants without creating the strain and the defects commonly found in mismatched heteroepitaxy. This method is called van der Waals (vdW) epitaxy. [17] Nevertheless, the substrate does influence the growth, [18] as it modifies the nucleation of the first layer. Some substrates provide growth with superior quality (amount of defects, 2D materials are considered the future of electronics and photonics, stimulated by their remarkable performance. Among the 2D materials family, β-In 2 Se 3 shows good mobility, excellent photoresponsivity, and exotic ferroelectricity, making it suitable for a wide variety of applications. To date, most reported devices from 2D materials in general, and β-In 2 Se 3 in specific, rely on cumbersome fabrication methods using mechanical exfoliation and transfer of layers onto other substrates. However, for a successful ado...

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Section: Introductionmentioning

confidence: 99%

“…However, so far, only a few large‐scale production methods combining van der Waals epitaxy and standard semiconductor processing have been reported. [ 19–21 ]…”

Section: Introductionmentioning

confidence: 99%

Wafer‐Scale Fabrication of 2D β‐In₂Se₃ Photodetectors

Claro

Grzonka

Nicoara

et al. 2020

Advanced Optical Materials

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“…and two atoms belonging to group 16 of the periodic table of elements (S, O, Pt). During the last decade, an increasing interest on the use of MoS 2 has gradually emerged since this material exhibits several unprecedented properties, such as scalability [1], tunability [2], low noise figure [3], ambipolarity [3], non-zero bandgap, and, in the meantime, compatibility with the current complementary metal oxide semiconductor (CMOS) technology, as shown in literature [4]. MoS 2 suits for a large plethora of applications in the nano-electronics area [5], ranging from field-effect transistors (MoS 2 -FETs) and gas sensors [6,7], to photo-detectors [8] and solar cells [9].…”

Section: Introductionmentioning

confidence: 99%

Efficient and Versatile Modeling of Mono- and Multi-Layer MoS2 Field Effect Transistor

et al. 2020

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Two-dimensional (2D) materials with intrinsic atomic-level thicknesses are strong candidates for the development of deeply scaled field-effect transistors (FETs) and novel device architectures. In particular, transition-metal dichalcogenides (TMDCs), of which molybdenum disulfide (MoS2) is the most widely studied, are especially attractive because of their non-zero bandgap, mechanical flexibility, and optical transparency. In this contribution, we present an efficient full-wave model of MoS2-FETs that is based on (1) defining the constitutive relations of the MoS2 active channel, and (2) simulating the 3D geometry. The former is achieved by using atomistic simulations of the material crystal structure, the latter is obtained by using the solver COMSOL Multiphysics. We show examples of FET simulations and compare, when possible, the theoretical results to the experimental from the literature. The comparison highlights a very good agreement.

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“…Thin film transistors (TFTs), due to their signal sensitivity, high openness, miniaturization, and compatibility with other systems, have developed many applications in biological detection of proteins [ 9 , 10 ], DNA [ 11 , 12 ] and RNA [ 13 , 14 ]. Molybdenum disulfide (MoS 2 ), a mature two-dimensional material, has been proven successful in these applications due to its intrinsic energy gap, nano–bio hybrid ability, synthesis controllability, low cost and complementary metal oxide semiconductor (CMOS) compatibility [ 15 , 16 , 17 ]. However, in view of these characteristics, researchers have achieved detection of various biotargets at femtomolar concentrations but rarely focus on the biocompatibility (solution erosion) and reusability of the MoS 2 -based TFT biosensors [ 18 , 19 ].…”

Section: Introductionmentioning

confidence: 99%

Bio-Separated and Gate-Free 2D MoS2 Biosensor Array for Ultrasensitive Detection of BRCA1

et al. 2021

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2D molybdenum disulfide (MoS2)-based thin film transistors are widely used in biosensing, and many efforts have been made to improve the detection limit and linear range. However, in addition to the complexity of device technology and biological modification, the compatibility of the physical device with biological solutions and device reusability have rarely been considered. Herein, we designed and synthesized an array of MoS2 by employing a simple-patterned chemical vapor deposition growth method and meanwhile exploited a one-step biomodification in a sensing pad based on DNA tetrahedron probes to form a bio-separated sensing part. This solves the signal interference, solution erosion, and instability of semiconductor-based biosensors after contacting biological solutions, and also allows physical devices to be reused. Furthermore, the gate-free detection structure that we first proposed for DNA (BRCA1) detection demonstrates ultrasensitive detection over a broad range of 1 fM to 1 μM with a good linear response of R2 = 0.98. Our findings provide a practical solution for high-performance, low-cost, biocompatible, reusable, and bio-separated biosensor platforms.

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CMOS-compatible batch processing of monolayer MoS₂MOSFETs

Cited by 19 publications

References 13 publications

Wafer‐Scale Fabrication of 2D β‐In₂Se₃ Photodetectors

Wafer‐Scale Fabrication of 2D β‐In₂Se₃ Photodetectors

Efficient and Versatile Modeling of Mono- and Multi-Layer MoS2 Field Effect Transistor

Bio-Separated and Gate-Free 2D MoS2 Biosensor Array for Ultrasensitive Detection of BRCA1

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CMOS-compatible batch processing of monolayer MoS2MOSFETs

Cited by 19 publications

References 13 publications

Wafer‐Scale Fabrication of 2D β‐In2Se3 Photodetectors

Wafer‐Scale Fabrication of 2D β‐In2Se3 Photodetectors

Efficient and Versatile Modeling of Mono- and Multi-Layer MoS2 Field Effect Transistor

Bio-Separated and Gate-Free 2D MoS2 Biosensor Array for Ultrasensitive Detection of BRCA1

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CMOS-compatible batch processing of monolayer MoS₂MOSFETs

Wafer‐Scale Fabrication of 2D β‐In₂Se₃ Photodetectors

Wafer‐Scale Fabrication of 2D β‐In₂Se₃ Photodetectors