CMOS-compatible GaN-based devices on 200mm-Si for RF applications: Integration and Performance

Peralagu, Uthayasankaran; Jaeger, B. De; Fleetwood, D. M.; Wambacq, Piet; Zhao, Ming; Parvais, B.; Waldron, Niamh; Collaert, N.; Alian, A.; Putcha, Vamsi; Khaled, Ahmad; Rodríguez, R.; Sibaja-Hernandez, A.; Chang, Shu Chiuan; Simoen, Eddy; Zhao, Simeng E.

doi:10.1109/iedm19573.2019.8993582

Cited by 52 publications

(28 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Beyond operational speed of power amplifiers, output power (P out ) and power added efficiency (PAE) in RF Front End Modules are critical for next-generation portable devices and small cells. As opposed to CMOS, the high-power handling capabilities of GaN are advantageous for mm-wave operations [98] as the more energy-efficient system can be achieved owing to its capability in the high output power with high efficiency at high-frequency. However, the integration of GaN HEMTs remains one of the main concerns.…”

Section: Cmos Compatible Process For Gan Hemtmentioning

confidence: 99%

“…Figure 5 shows an example fabrication process flow of GaN devices. GaN devices with low RF loss, low buffer dispersion as well as good leakage blocking capability have been demonstrated by integrating the device on the Si platform based on the Au-free, Si CMOS compatible process [98,[101][102][103]. To enhance the functionality as well as the performance of the RF modules, various approaches to integrate CMOS and GaN devices have been developed [104,105].…”

Section: Cmos Compatible Process For Gan Hemtmentioning

confidence: 99%

See 1 more Smart Citation

Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration

Hsu

Lai

et al. 2021

Micromachines

View full text Add to dashboard Cite

GaN HEMT has attracted a lot of attention in recent years owing to its wide applications from the high-frequency power amplifier to the high voltage devices used in power electronic systems. Development of GaN HEMT on Si-based substrate is currently the main focus of the industry to reduce the cost as well as to integrate GaN with Si-based components. However, the direct growth of GaN on Si has the challenge of high defect density that compromises the performance, reliability, and yield. Defects are typically nucleated at the GaN/Si heterointerface due to both lattice and thermal mismatches between GaN and Si. In this article, we will review the current status of GaN on Si in terms of epitaxy and device performances in high frequency and high-power applications. Recently, different substrate structures including silicon-on-insulator (SOI) and engineered poly-AlN (QST®) are introduced to enhance the epitaxy quality by reducing the mismatches. We will discuss the development and potential benefit of these novel substrates. Moreover, SOI may provide a path to enable the integration of GaN with Si CMOS. Finally, the recent development of 3D hetero-integration technology to combine GaN technology and CMOS is also illustrated.

show abstract

Section: Cmos Compatible Process For Gan Hemtmentioning

confidence: 99%

Section: Cmos Compatible Process For Gan Hemtmentioning

confidence: 99%

Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration

Hsu

Lai

et al. 2021

Micromachines

View full text Add to dashboard Cite

show abstract

“…[ 5 ] Besides, the AlGaN/GaN HEMTs on Si technology has the potential to be integrated into complementary metal‐oxide‐semiconductor (CMOS) circuits on the same platform. [ 6 ]…”

Section: Introductionmentioning

confidence: 99%

“…[5] Besides, the AlGaN/GaN HEMTs on Si technology has the potential to be integrated into complementary metaloxide-semiconductor (CMOS) circuits on the same platform. [6] Over the past, several GaN-based technologies for applications at Ka band or above have been reported. Demonstration of highefficiency monolithic microwave integrated circuits (MMIC) power amplifiers using 40 nm gate length technology was presented.…”

mentioning

confidence: 99%

Study of AlGaN/GaN High‐Electron‐Mobility Transistors on Si Substrate with Thick Copper‐Metallized Interconnects for Ka‐Band Applications

Lee

Lin

Lai

et al. 2023

Physica Status Solidi (a)

View full text Add to dashboard Cite

Recently, high-frequency devices for Ka band and above are becoming more important for wireless communication due to 5 G and beyond applications. The highfrequency AlGaN/GaN high-electron-mobility transistors (HEMTs) are widely considered for millimeter-wave applications due to high electron mobility, high critical field, excellent electron peak velocity, and wide bandgap of GaN material. [1][2][3][4] To reduce the production cost, AlGaN/GaN HEMTs grown on Si substrates are popularly investigated for Ka band applications. [5] Besides, the AlGaN/GaN HEMTs on Si technology has the potential to be integrated into complementary metaloxide-semiconductor (CMOS) circuits on the same platform. [6] Over the past, several GaN-based technologies for applications at Ka band or above have been reported. Demonstration of highefficiency monolithic microwave integrated circuits (MMIC) power amplifiers using 40 nm gate length technology was presented. [7] A 60 nm gate length with graded-channel technology was adopted, exhibiting peak power-added efficiency (PAE) up to 70%. [8,9] While the short gate length approaches effectively led to high efficiency at the desired frequency bands, the power density and overall reliability may be an issue due to the limited breakdown voltage. GaN-on-SiC configuration with very thin barrier of 3 nm was reported, showing a power density of 4 W mm À1 under continuous wave (CW) mode at 40 GHz. [10] In general, gold (Au) is used as the thick metallization metal for III-V HEMTs in the past. Moreover, the price of Au is expensive. To reduce the production cost for mass production of GaN-based device, copper (Cu) is considered to be an ideal candidate to replace Au as metallization metal. Compared to Au, Cu has lower resistivity, and the better thermal conductivity of Cu suggests it to be a suitable replacement. Nevertheless, when Cu is in direct contact with a semiconductor, it tends to diffuse into the semiconductor, sabotaging the substrate and the device. [11][12][13] Therefore, a diffusion barrier layer is needed to overcome this problem.Diffusion barrier layers such as tantalum (Ta), tantalum nitride (TaN x ), tungsten nitride (WN x ), Ta/MnSi x O y bilayer structures, and platinum (Pt) have been studied in the past years. [13][14][15][16][17] According to the previous reports, Pt is an effective diffusion barrier to prevent Cu diffusion into III-V devices. [8,12,13] Reports have also shown that addition of titanium (Ti) layer to the Au/WN x or WN x /Cu interfaces can improve the adhesion between Cu and the semiconductor. [18]

show abstract

“…In addition, GaN-on-SiC wafer size being limited to 6 inch is a bottleneck in scalability and hence, GaN-on-Si HEMTs are being increasingly explored for radio frequency (RF) and power performance. [5][6][7][8][9][10][11][12][13] Lattice-matched In 0.17 Al 0.83 N barriers are more attractive for GaN-on-Si HEMTs as they offer high channel charge with thin barriers, enabling deep scaling in these devices. Some of the recent demonstrations of RF performance using InAlN/GaNon-Si HEMTs include the f T /f max of 250/60 GHz by Xing et al with 40 nm gate length (L G ), 300 nm source-to-drain separation (L SD ), and a contact resistance (R C ) of 0.2 Ω mm.…”

Section: Introductionmentioning

confidence: 99%

20.2 GHz‐µmf_T–L_Gin InAlN/GaN‐on‐Si High Electron Mobility Transistors

Charan

Muralidharan

Raghavan

et al. 2022

Physica Status Solidi (a)

View full text Add to dashboard Cite

Herein, InAlN/GaN‐on‐Si high‐electron‐mobility transistors (HEMTs) with an fT–LG product of 20.2 GHz–μm are demonstrated. The device with a gate length of 200 nm and a source–drain spacing of 900 nm exhibits a peak transconductance of 543 mS mm−1, an ION/IOFF ratio of ≈107, a maximum on‐current of 2.4 A mm−1, and an on‐resistance of 1.07 Ω mm. Small‐signal characteristics show a unity current gain cutoff frequency of 101 GHz. Delay time analysis is performed to evaluate various delay components and their contribution to the small‐signal performance of the device. An effective electron velocity of 1.56 × 107 cm s−1 is estimated in these devices, which minimizes the intrinsic delay of the transistor. The factors limiting the fT–LG product in deeply scaled devices are discussed using the delay analysis.

show abstract

CMOS-compatible GaN-based devices on 200mm-Si for RF applications: Integration and Performance

Cited by 52 publications

References 13 publications

Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration

Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration

Study of AlGaN/GaN High‐Electron‐Mobility Transistors on Si Substrate with Thick Copper‐Metallized Interconnects for Ka‐Band Applications

20.2 GHz‐µmf_T–L_Gin InAlN/GaN‐on‐Si High Electron Mobility Transistors

Contact Info

Product

Resources

About

CMOS-compatible GaN-based devices on 200mm-Si for RF applications: Integration and Performance

Cited by 52 publications

References 13 publications

Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration

Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration

Study of AlGaN/GaN High‐Electron‐Mobility Transistors on Si Substrate with Thick Copper‐Metallized Interconnects for Ka‐Band Applications

20.2 GHz‐µmfT–LGin InAlN/GaN‐on‐Si High Electron Mobility Transistors

Contact Info

Product

Resources

About

20.2 GHz‐µmf_T–L_Gin InAlN/GaN‐on‐Si High Electron Mobility Transistors