CMOS Compatible Growth of High Quality Ge, SiGe and SiGeSn for Photonic Device Applications

Alher, Murtadha; Mosleh, Aboozar; Cousar, Larry; Dou, Wei; Grant, Perry C.; Ghetmiri, Seyed Amir; Al-Kabi, Sattar; Benamara, Mourad; Li, Baohua; Mortazavi, Mansour; Yu, Shui-Qing; Naseem, Hameed A.

doi:10.1149/06905.0269ecst

Cited by 9 publications

(2 citation statements)

References 21 publications

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“…In this section, we have considered SiGe material as a channel to provide an advanced example for NWTs simulation with NESS, because this material is more compatible with the current CMOS technology [57]. In particular, we have simulated n-type Si x Ge x−1 channel NWTs adjusting the material properties of SiGe by changing the mole fraction to have the trade off between the advantages of Si and Ge individually.…”

Section: Nanowire Transistorsmentioning

confidence: 99%

Simulation and Modeling of Novel Electronic Device Architectures with NESS (Nano-Electronic Simulation Software): A Modular Nano TCAD Simulation Framework

et al. 2021

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The modeling of nano-electronic devices is a cost-effective approach for optimizing the semiconductor device performance and for guiding the fabrication technology. In this paper, we present the capabilities of the new flexible multi-scale nano TCAD simulation software called Nano-Electronic Simulation Software (NESS). NESS is designed to study the charge transport in contemporary and novel ultra-scaled semiconductor devices. In order to simulate the charge transport in such ultra-scaled devices with complex architectures and design, we have developed numerous simulation modules based on various simulation approaches. Currently, NESS contains a drift-diffusion, Kubo–Greenwood, and non-equilibrium Green’s function (NEGF) modules. All modules are numerical solvers which are implemented in the C++ programming language, and all of them are linked and solved self-consistently with the Poisson equation. Here, we have deployed some of those modules to showcase the capabilities of NESS to simulate advanced nano-scale semiconductor devices. The devices simulated in this paper are chosen to represent the current state-of-the-art and future technologies where quantum mechanical effects play an important role. Our examples include ultra-scaled nanowire transistors, tunnel transistors, resonant tunneling diodes, and negative capacitance transistors. Our results show that NESS is a robust, fast, and reliable simulation platform which can accurately predict and describe the underlying physics in novel ultra-scaled electronic devices.

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Section: Nanowire Transistorsmentioning

confidence: 99%

Simulation and Modeling of Novel Electronic Device Architectures with NESS (Nano-Electronic Simulation Software): A Modular Nano TCAD Simulation Framework

et al. 2021

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“…Unfortunately, the overwhelmingly superior material that can replace Si has not been found yet. In this paper, we concentrate on SiGe, which is more compatible with the current complementary metal-oxide-semiconductor (CMOS) technology [15]. In addition, material properties of SiGe can be adjusted by the mole fraction to have the advantages of Si and Ge together.…”

Section: Introductionmentioning

confidence: 99%

Variability Predictions for the Next Technology Generations of n-type SixGe1−x Nanowire MOSFETs

Lee¹,

Badami²,

Carrillo-Nuñez³

et al. 2018

Micromachines

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Using a state-of-the-art quantum transport simulator based on the effective mass approximation, we have thoroughly studied the impact of variability on SixGe1−x channel gate-all-around nanowire metal-oxide-semiconductor field-effect transistors (NWFETs) associated with random discrete dopants, line edge roughness, and metal gate granularity. Performance predictions of NWFETs with different cross-sectional shapes such as square, circle, and ellipse are also investigated. For each NWFETs, the effective masses have carefully been extracted from sp3d5s∗ tight-binding band structures. In total, we have generated 7200 transistor samples and performed approximately 10,000 quantum transport simulations. Our statistical analysis reveals that metal gate granularity is dominant among the variability sources considered in this work. Assuming the parameters of the variability sources are the same, we have found that there is no significant difference of variability between SiGe and Si channel NWFETs.

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Theoretical investigation of the structural, electronic, optical, and elastic properties of the zinc blende SiGe1 − xSnx ternary alloy

et al. 2023

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CMOS Compatible Growth of High Quality Ge, SiGe and SiGeSn for Photonic Device Applications

Cited by 9 publications

References 21 publications

Simulation and Modeling of Novel Electronic Device Architectures with NESS (Nano-Electronic Simulation Software): A Modular Nano TCAD Simulation Framework

Simulation and Modeling of Novel Electronic Device Architectures with NESS (Nano-Electronic Simulation Software): A Modular Nano TCAD Simulation Framework

Variability Predictions for the Next Technology Generations of n-type SixGe1−x Nanowire MOSFETs

Theoretical investigation of the structural, electronic, optical, and elastic properties of the zinc blende SiGe1 − xSnx ternary alloy

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