CMOS-Compatible Hybrid III-V/Si Photodiodes Using a Lateral Current Collection Scheme

Baumgartner, Yannick; Caër, Charles; Seifried, Marc; Villares, Gustavo; Caimi, Daniele; Morf, Thomas; Faist, Jérôme; Offrein, Bert Jan; Czornomaz, Lukas

doi:10.1109/ecoc.2018.8535117

Cited by 8 publications

(5 citation statements)

References 9 publications

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“…An example of such a hybrid Si /III-V architecture is the photodetector with adiabatic mode coupling and lateral current collection scheme shown in Fig. 5a-c [77], [78]. As illustrated in the schematic in Fig.…”

Section: Integrated Iii-v Optoelectronicsmentioning

confidence: 99%

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Heterogeneous Integration of III–V Materials by Direct Wafer Bonding for High-Performance Electronics and Optoelectronics

Caimi

Tiwari

Sousa

et al. 2021

IEEE Trans. Electron Devices

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Section: Integrated Iii-v Optoelectronicsmentioning

confidence: 99%

“…The III-V is introduced between front-end-ofthe-line (FEOL) and back-end-of-the-line (BEOL), enabling the use of a common BEOL for PICs and CMOS. The devices exhibit sub-nA dark currents, high responsivity and 32 Gbps NRZ transmission [78], [79].…”

Section: Integrated Iii-v Optoelectronicsmentioning

confidence: 99%

Heterogeneous Integration of III–V Materials by Direct Wafer Bonding for High-Performance Electronics and Optoelectronics

Caimi

Tiwari

Sousa

et al. 2021

IEEE Trans. Electron Devices

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“…Many research groups have also developed hybrid integration. [8][9][10][11][12][13] Our research team has performed laser growth directly on InP/Si wafer by the growth device. The most important change that we adapted before the epitaxial laser growth was that we bonded InP thin film on silicon having thickness of 250 μm.…”

Section: Introductionmentioning

confidence: 99%

Gain Coefficient Comparison between Silicon and InP Laser Diode Substrate

Periyanayagam,

Shimomura

2024

Physica Status Solidi (a)

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The article presents the study on the comparison of gain coefficient of laser diode on silicon and InP substrate. Fabry–Perot GaInAsP bulk laser diode on InP/Si substrate is successfully obtained to study the optical gain coefficient of laser diode. The influences of temperature, threshold current comparison, and optical gain achievements between bulk InP/Si laser diode substrate and InP laser diode substrate are also analyzed using the same growth structure. A new approach is found by the research group which involves bonding of 1 μm InP semiconductor crystal and a low‐cost silicon crystal prior to epitaxial laser structure growth. With the help of metal–organic vapor‐phase epitaxy technique, GaInAsP double‐heterostructure laser is epitaxially deposited on the well‐bonded InP/Si crystal. Fabry–Perot lasing under pulsed condition is achieved, and the lasing characteristics of InP/Si substrate are compared with that of InP laser device to study the gain coefficient.

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“…Consequently, direct bonding of III-V membrane layers on a Si substrate followed by epitaxial regrowth of InP-based material is an effective technique [44][45][46][47][48][49][50][51][52]. This technique overcomes the problems with direct epitaxial growth and bonding techniques.…”

Section: Introductionmentioning

confidence: 99%

Development of an Epitaxial Growth Technique Using III-V on a Si Platform for Heterogeneous Integration of Membrane Photonic Devices on Si

et al. 2021

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The rapid increase in total transmission capacity within and between data centers requires the construction of low-cost, high-capacity optical transmitters. Since a tremendous number of transmitters are required, photonic integrated circuits (PICs) using Si photonics technology enabling the integration of various functional devices on a single chip is a promising solution. A limitation of a Si-based PIC is the lack of an efficient light source due to the indirect bandgap of Si; therefore, hybrid integration technology of III-V semiconductor lasers on Si is desirable. The major challenges are that heterogeneous integration of III-V materials on Si induces the formation of dislocation at high process temperature; thus, the epitaxial regrowth process is difficult to apply. This paper reviews the evaluations conducted on our epitaxial growth technique using a directly bonded III-V membrane layer on a Si substrate. This technique enables epitaxial growth without the fundamental difficulties associated with lattice mismatch or anti-phase boundaries. In addition, crystal degradation correlating with the difference in thermal expansion is eliminated by keeping the total III-V layer thickness thinner than ~350 nm. As a result, various III-V photonic-device-fabrication technologies, such as buried regrowth, butt-joint regrowth, and selective area growth, can be applicable on the Si-photonics platform. We demonstrated the growth of indium-gallium-aluminum arsenide (InGaAlAs) multi-quantum wells (MQWs) and fabrication of lasers that exhibit >25 Gbit/s direct modulation with low energy cost. In addition, selective-area growth that enables the full O-band bandgap control of the MQW layer over the 150-nm range was demonstrated. We also fabricated indium-gallium-arsenide phosphide (InGaAsP) based phase modulators integrated with a distributed feedback laser. Therefore, the directly bonded III-V-on-Si substrate platform paves the way to manufacturing hybrid PICs for future data-center networks.

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CMOS-Compatible Hybrid III-V/Si Photodiodes Using a Lateral Current Collection Scheme

Cited by 8 publications

References 9 publications

Heterogeneous Integration of III–V Materials by Direct Wafer Bonding for High-Performance Electronics and Optoelectronics

Heterogeneous Integration of III–V Materials by Direct Wafer Bonding for High-Performance Electronics and Optoelectronics

Gain Coefficient Comparison between Silicon and InP Laser Diode Substrate

Development of an Epitaxial Growth Technique Using III-V on a Si Platform for Heterogeneous Integration of Membrane Photonic Devices on Si

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