The seamless integration of III-V nanostructures on silicon is a long-standing goal and an important step towards integrated optical links. In the present work, we demonstrate scaled and waveguide coupled III-V photodiodes monolithically integrated on Si, implemented as InP/In0.5Ga0.5As/InP p-i-n heterostructures. The waveguide coupled devices show a dark current down to 0.048 A/cm2 at −1 V and a responsivity up to 0.2 A/W at −2 V. Using grating couplers centered around 1320 nm, we demonstrate high-speed detection with a cutoff frequency f3dB exceeding 70 GHz and data reception at 50 GBd with OOK and 4PAM. When operated in forward bias as a light emitting diode, the devices emit light centered at 1550 nm. Furthermore, we also investigate the self-heating of the devices using scanning thermal microscopy and find a temperature increase of only ~15 K during the device operation as emitter, in accordance with thermal simulation results.

A key component for optical on-chip communication is an efficient light source. However, to enable low energy per bit communication and local integration with Si CMOS, devices need to be further scaled down. In this work, we fabricate micro-and nanolasers of different shapes in InP by direct wafer bonding on Si. Metal-clad cavities have been proposed as means to scale dimensions beyond the diffraction limit of light by exploiting hybrid photonic-plasmonic modes. Here, we explore the size scalability of whispering-gallery mode light sources by cladding the sidewalls of the device with Au. The metal clad cavities demonstrate room temperature lasing upon optical excitation for Au-clad devices with InP diameters down to 300 nm, while the purely photonic counterparts show lasing only down to 500 nm. Numerical thermal simulations support the experimental findings and confirm an improved heat-sinking capability of the Au-clad devices, suggesting a reduction in device temperature of 473 K for the metal-clad InP nanodisk laser, compared to the one without Au. This would provide substantial performance benefits even in the absence of a hybrid photonic-plasmonic mode. These results give us insight into the benefits of metalclad designs to downscale integrated lasers on Si.

Photonic crystal (PhC) cavities are promising candidates for Si photonics integrated circuits due to their ultrahigh quality (Q)-factors and small mode volumes. Here, we demonstrate a novel concept of a one-dimensional hybrid III-V/Si PhC cavity which exploits a combination of standard siliconon-insulator technology and active III-V materials. Using template-assisted selective epitaxy, the central part of a Si PhC lattice is locally replaced with III-V gain material. The III-V material is placed to overlap with the maximum of the cavity mode field profile, while keeping the major part of the PhC in Si. The selective epitaxy process enables growth parallel to the substrate and hence, inplane integration with Si, and in-situ in-plane homo-and heterojunctions. The fabricated hybrid III-V/Si PhCs show emission over the entire telecommunication band from 1.2 µm to 1.6 µm at room temperature validating the device concept and its potential towards fully integrated light sources on silicon.

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Combining the ability to localize electromagnetic fields at the nanoscale with a directional response, plasmonic antennas offer an effective strategy to shape the far-field pattern of coupled emitters. Here, we introduce a family of directional multiresonant antennas that allows for polarization-resolved spectral identification of fluorescent emission. The geometry consists of a central aperture surrounded by concentric polygonal corrugations. By varying the periodicity of each axis of the polygon individually, this structure can support multiple resonances that provide independent control over emission directionality for multiple wavelengths. Moreover, since each resonant wavelength is directly mapped to a specific polarization orientation, spectral information can be encoded in the polarization state of the out-scattered beam. To demonstrate the potential of such structures in enabling simplified detection schemes and additional functionalities in sensing and imaging applications, we use the central subwavelength aperture as a built-in nanocuvette and manipulate the fluorescent response of colloidal-quantum-dot emitters coupled to the multiresonant antenna.