CMOS-integrated poly-SiGe cantilevers with read/write system for probe storage device

Severi, S.; Heck, John; Chou, T.-K.; Belov, Nickolai; Park, J.-S.; Harrar, D.; Jain, Amit; Hoof, R. Van; Bois, Bert Du; Coster, J. De; Pedreira, O. Varela; Willegems, Myriam; Vaes, Jan; Jamieson, Geraldine; Haspeslagh, L.; Adams, Donald E.; Rao, Valluri; Decoutere, Stefaan; Witvrouw, Ann

doi:10.1109/sensor.2009.5285430

Cited by 22 publications

(9 citation statements)

References 7 publications

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“…Integrated with AFM tip arrays (e.g. [6] by Intel), such devices can achieve wide range in-field tuning of the resonance frequency, and facilitate the realization of reconfigurable RF MEMS front-ends.…”

Section: Resultsmentioning

confidence: 99%

Etch-a-Sketch Resonator

Wang¹,

Bhave²,

Bhattacharjee³

2014

2014 Solid-State, Actuators, and Microsystems Workshop Technical Digest

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Thispaper demonstrates AFM-based post-release piezoelectric domain engineering [1] on a Lithium Niobate (LN) MEMS resonator. We "Etch-A-Sketch" a poling pattern on the membrane resonator that redefines the electro-mechanical coupling of the mechanical vibration modes. This technique introduces a new resonance peak at 681 MHz to the original un-poled admittance spectrum of the resonator. In addition, this method only requires 80V (magnitude) to achieve domain inversion, which is over 100× lower than the poling voltage required for bulk LN. f y = 592 MHz f x = 681 MHz

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Section: Resultsmentioning

confidence: 99%

Etch-a-Sketch Resonator

Wang¹,

Bhave²,

Bhattacharjee³

2014

2014 Solid-State, Actuators, and Microsystems Workshop Technical Digest

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“…The deposition and annealing temperatures for SiGe and Ge are below 475 °C, which is safe for the CMOS metallization. Various integrate MEMS devices, including inertial sensors, resonators and data storage devices, have been fabricated using this technology [ 27 , 28 , 29 ]. This technology has been commercialized by Silicon Clock, which was purchased by Silicon Laboratory in 2010, for manufacturing integrated MEMS oscillators [ 30 ].…”

Section: Post-cmos Memsmentioning

confidence: 99%

CMOS MEMS Fabrication Technologies and Devices

2016

Micromachines

114

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This paper reviews CMOS (complementary metal-oxide-semiconductor) MEMS (micro-electro-mechanical systems) fabrication technologies and enabled micro devices of various sensors and actuators. The technologies are classified based on the sequence of the fabrication of CMOS circuitry and MEMS elements, while SOI (silicon-on-insulator) CMOS MEMS are introduced separately. Introduction of associated devices follows the description of the respective CMOS MEMS technologies. Due to the vast array of CMOS MEMS devices, this review focuses only on the most typical MEMS sensors and actuators including pressure sensors, inertial sensors, frequency reference devices and actuators utilizing different physics effects and the fabrication processes introduced. Moreover, the incorporation of MEMS and CMOS is limited to monolithic integration, meaning wafer-bonding-based stacking and other integration approaches, despite their advantages, are excluded from the discussion. Both competitive industrial products and state-of-the-art research results on CMOS MEMS are covered.

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“…In this case, a second wafer with the CMOS circuitry is used to which the probes are bonded, as done in 226 . An alternative integration with CMOS is the single-wafer process described in 243 . Here first the CMOS circuitry is created, and on the last metalization layer, a chemical mechanical polishing (CMP) step is performed.…”

Section: B Parallel Operationmentioning

confidence: 99%

Probe-based data storage

Koelmans,

Engelen,

Abelmann

2015

Preprint

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Probe-based data storage attracted many researchers from academia and industry, resulting in unprecedented high data-density demonstrations. This topical review gives a comprehensive overview of the main contributions that led to the major accomplishments in probe-based data storage. The most investigated technologies are reviewed: topographic, phase-change, magnetic, ferroelectric and atomic and molecular storage. Also, the positioning of probes and recording media, the cantilever arrays and parallel readout of the arrays of cantilevers are discussed. This overview serves two purposes. First, it provides an overview for new researchers entering the field of probe storage, as probe storage seems to be the only way to achieve data storage at atomic densities. Secondly, there is an enormous wealth of invaluable findings that can also be applied to many other fields of nanoscale research such as probe-based nanolithography, 3D nanopatterning, solid-state memory technologies and ultrafast probe microscopy. B. Current status of probe storageThe maturity of the various types of probe storage differs significantly. Four popular types, namely phase change, magnetic, thermomechanical and ferroelectric storage are listed in table I.Probe-based data storage has attracted much scientific and commercial interest [18][19][20] . After more than two decades of research on probe storage, an overview of what has been accomplished so far, together with an outlook of the a)

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CMOS-integrated poly-SiGe cantilevers with read/write system for probe storage device

Cited by 22 publications

References 7 publications

Etch-a-Sketch Resonator

Etch-a-Sketch Resonator

CMOS MEMS Fabrication Technologies and Devices

Probe-based data storage

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