CMOS terahertz receivers

Zhong, Qishui; Choi, Wooyeol; Kim, D.-Y.; Ahmad, Zeshan; Xu, Rui; Zhang, Y.; Han, Ruonan; Kshattry, Sandeep; Sharma, Navneet; Chen, Z.-Y.; Shim, Dongha; Sankaran, Swaminathan; Seok, Eunyoung; Mao, Chuying; Lucia, Frank C. De; McMillan, James P.; Neese, Christopher F.; Kim, I.; Momson, Ibukunoluwa; Yelleswarapu, Pavan; Dong, Shenggang; Pouya, Behnam; Byreddy, Pranith R.; Chen, Z.; Zhu, Yukun; Ghosh, Sudip; Dinh, Thanh Vinh; JalaliBidgoli, Farzaneh; Newman, J. Daniel; O, Kenneth K.

doi:10.1109/cicc.2018.8357054

Cited by 16 publications

(2 citation statements)

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“…Conventional matching networks are not employed in this design, as they incur excessive losses at FIR frequencies. Instead, a direct resistance matching technique is utilized [3,9]. The on-chip patch antenna is designed for operation at 20 THz and has been simulated and optimized using the ANSYS HFSS simulator.…”

Section: Far-infrared Circuit Designmentioning

confidence: 99%

20-Thz Far-Infrared Imaging Using an Antenna-Coupled Schottky Barrier Diode in a Foundry CMOS

Pouya

2024

Preprint

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This paper presents the implementation of a 20- THz Far-Infrared (FIR) imager using an antenna-coupled Schottky barrier diode (SBD) structure fabricated in a 130-nm foundry CMOS process without any process modifications. The detector’s performance is characterized using a 15.1 µm quantum-cascade laser (QCL) source. At a modulation frequency of 13 Hz, the detector achieves a peak optical responsivity (Rv) of 35.2 V/W, which is ~6 times higher than that of CMOS detectors operating in a similar frequency range. The measured shot-noise limited noise equivalent power (NEP) is 1.8 nW/√Hz which is comparable to that of commercially available thermopile detectors that are 47,000 times larger in area.

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Section: Far-infrared Circuit Designmentioning

confidence: 99%

20-Thz Far-Infrared Imaging Using an Antenna-Coupled Schottky Barrier Diode in a Foundry CMOS

Pouya

2024

Preprint

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“…In an SBD, the THz signal will energize the electrons to overcome the barrier. The cutoff frequency of an SBD can be as high as 2 THz [115]. While in a THz fieldtransistors, the THz wave modifies the plasma wave in the channel.…”

Section: Non-coherent Thz Imagingmentioning

confidence: 99%

A review on applications of integrated terahertz systems

Venkatesh

Saeidi

2021

China Commun.

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A review on Terahertz end-to-end systems with an emphasis on integrated approaches is presented. Four major catalogs of THz integrated systems, including THz communication systems, THz imaging systems, THz radars, and THz spectroscopy systems, are reviewed in this article. The performance of integrated systems is compared with non-integrated solutions, followed by a discussion on the trend in future research avenues and applications.

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Modeling and Parasitic Extraction of the MM9 Transistor for GHz/THz CMOS RF Circuit Design

Gadige,

Paramesha

2024

J Electron Test

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CMOS terahertz receivers

Cited by 16 publications

References 50 publications

20-Thz Far-Infrared Imaging Using an Antenna-Coupled Schottky Barrier Diode in a Foundry CMOS

20-Thz Far-Infrared Imaging Using an Antenna-Coupled Schottky Barrier Diode in a Foundry CMOS

A review on applications of integrated terahertz systems

Modeling and Parasitic Extraction of the MM9 Transistor for GHz/THz CMOS RF Circuit Design

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