CMOS THz Generator With Frequency Selective Negative Resistance Tank

Femtosecond-Long Pulse-Based Modulation for Terahertz Band Communication in Nanonetworks

“…For the time being, monolithic integrated circuits based on Silicon [19], Silicon Germanium [20], Indium Phosphide [21] and Gallium Nitride [22], have been demonstrated at frequencies between 0.1 and 1 THz. For higher frequency operation, photonic devices and, in particular, Quantum Cascade Lasers (QCLs) [12], are commonly utilized.…”

“…II. By combining (19), (20) and (21) in (18), the achievable information rate in bit/symbol can be written as (22). Finally, the maximum achievable information rate in bit/second is obtained by multiplying the rate in bit/symbol (22) by the rate at which symbols are transmitted, R = 1/T s = 1/(βT p ), where T s is the time between symbols, T p is the pulse length, and β is the ratio between them.…”

“…4(a), the achievable information rate for every nano-device IR I u−sym in bit/symbol, obtained from (18), (19) and (20) in (30), is shown as a function of the number of nano-devices U and the transmission distance d.…”

Accurate Equation Analysis for RF Negative Resistance circuit at High Frequency Operation Range

“…위와 같은 부성저항 생성 회로를 이용하 여 설계된 Sub-THz 발진기도 있다. 이 발진기는 기존 의 교차결합 구조와 RFNR회로 구조를 적층구조로 결 합하여 1개의 구조로는 발진할 수 없는 고주파수에서 동작하기 위해 고안된 발진기이다 [10] . [10] .…”

“…이 발진기는 기존 의 교차결합 구조와 RFNR회로 구조를 적층구조로 결 합하여 1개의 구조로는 발진할 수 없는 고주파수에서 동작하기 위해 고안된 발진기이다 [10] . [10] . [11][12][13] .…”