CMOS Transmitters for 2.4-GHz RF Devices: Design Architectures of the 2.4-GHz CMOS Transmitter for RF Devices

Badal, Torikul Islam; Reaz, Mamun Bin Ibne; Bhuiyan, Mohammad Arif Sobhan; Kamal, Noorfazila

doi:10.1109/mmm.2018.2875607

Cited by 23 publications

(8 citation statements)

References 73 publications

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“…Static power consumption (P S ) results from the leakage current (ICC), whereas dynamic power consumption (P D ) occurs when switching at high frequency [26]. Equations (3) and (4) show the derivation of the static and dynamic power consumption, respectively. Static power significantly affects the overall power consumption.…”

Section: Power Consumptionmentioning

confidence: 99%

“…At present, wireless communication systems are experiencing a rapid growth because of the advancement of complementary metal-oxide semiconductor (CMOS) technology [1,2] which provides more advantages over Gallium Arsenide (GaAs) and Gallium Nitride (GaN) technologies. CMOS technology enables operation at a lower power supply, resulting in a reduced power dissipation in the circuit [3,4] and a minimized fabrication cost because of the compact chip size. CMOS offers the prospect of integrating radiofrequency (RF)/digital/analog functions on a single chip in a low-cost manner [5][6][7].…”

Section: Introductionmentioning

confidence: 99%

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Design Architectures of the CMOS Power Amplifier for 2.4 GHz ISM Band Applications: An Overview

et al. 2019

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Power amplifiers (PAs) are among the most crucial functional blocks in the radio frequency (RF) frontend for reliable wireless communication. PAs amplify and boost the input signal to the required output power. The signal is amplified to make it sufficiently high for the transmitter to propagate the required distance to the receiver. Attempted advancements of PA have focused on attaining high-performance RF signals for transmitters. Such PAs are expected to require low power consumption while producing a relatively high output power with a high efficiency. However, current PA designs in nanometer and micrometer complementary metal–oxide semiconductor (CMOS) technology present inevitable drawbacks, such as oxide breakdown and hot electron effect. A well-defined architecture, including a linear and simple functional block synthesis, is critical in designing CMOS PA for various applications. This article describes the different state-of-the art design architectures of CMOS PA, including their circuit operations, and analyzes the performance of PAs for 2.4 GHz ISM (industrial, scientific, and medical) band applications.

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Section: Power Consumptionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Design Architectures of the CMOS Power Amplifier for 2.4 GHz ISM Band Applications: An Overview

et al. 2019

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“…The desire for portability and low cost forces the scientists to design very compact and power-efficient communication appliances [1][2][3]. The continuous advancement in CMOS technology made the realization of fabricating fully integrated receivers easy maintaining the optimum performance.…”

Section: Introductionmentioning

confidence: 99%

Design of a low-power compact CMOS variable gain amplifier for modern RF receivers

Alam¹,

Bhuiyan²,

Badal³

et al. 2020

Bulletin EEI

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The demand for portability has speeded up the design of low-power electronic communication devices. Variable gain amplifier (VGA) is one of the most vulnerable elements of every modern receiver for the proper baseband processing of the signal. CMOS VGAs are generally suffered from low bandwidth and small gain range. In this research, a two-stage class AB VGA, each stage comprising of a direct transconductance amplifier and a linear transimpedance amplifier, is designed in Silterra 0.13-μm CMOS utilizing Mentor Graphics environment. The post-layout simulation results reveal that the VGA design achieves the widest bandwidth of 200 MHz and high gain range from -33 to 32 dB. The VGA dissipates only 2mW from a single 1.2 V DC supply. The core chip area of the VGA is also only 0.026 mm2 which is also the lowest compared to recent researches. Such a VGA will be a very useful module for all modern communication devices.

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“…A VLSI preamplifier costs much less than a hybrid one or a preamplifier unit [5]. CMOS exhibits several advantages over other concurrent technologies and and is preferred in VLSI circuit design [6][7]. A very popular approach in designing the VLSI CSA is the usage of an operational amplifier (Op-amp), with the R-C feedback network.…”

Section: Introductionmentioning

confidence: 99%

A 0.35μm Low-Noise Stable Charge Sensitive Amplifier for Silicon Detectors Applications

Bhuiyan¹

2020

Informacije MIDEM

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The Charge Sensitive Amplifier (CSA) is the key module of the front-end electronics of various types of Silicon detectors and most radiation detection systems. High gain, stability, and low input noise are the major concerns of a typical CSA circuit in order to achieve amplified susceptible input charge (current) for further processing. To design such a low-noise, stable, and low power dissipation solution, a CSA is required to be realized in a complementary metal-oxide-semiconductor (CMOS) technology with a compact design. This research reports a low-noise highly stabile CSA design for Silicon detectors applications, which has been designed and validated in TSMC 0.35 um CMOS process. In a typical CSA design, the detector capacitance and the input transistor's width are the dominant parameters for achieving low noise performance. Therefore, the Equivalent Noise Charge (ENC) with respect to those parameters has been optimized, for a range of detector capacitance from 0.2 pF-2 pF. However, the parallel noise of the feedback was removed by adopting a voltage-controlled NMOS resistor, which in turn helped to achieve high stability of the circuit. The simulation results provided a baseline gain of 9.92 mV/fC and show that ENC was found to be 42.5 e-with 3.72 e-/pF noise slope. The Corner frequency exhibited by the CSA is 1.023 GHz and the output magnitude was controlled at-56.8 dB; it dissipates 0.23 mW with a single voltage supply of 3.3 V with an active die area of 0.0049 mm 2 .

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CMOS Transmitters for 2.4-GHz RF Devices: Design Architectures of the 2.4-GHz CMOS Transmitter for RF Devices

Cited by 23 publications

References 73 publications

Design Architectures of the CMOS Power Amplifier for 2.4 GHz ISM Band Applications: An Overview

Design Architectures of the CMOS Power Amplifier for 2.4 GHz ISM Band Applications: An Overview

Design of a low-power compact CMOS variable gain amplifier for modern RF receivers

A 0.35μm Low-Noise Stable Charge Sensitive Amplifier for Silicon Detectors Applications

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