CMOS trimming circuit based on polysilicon fusing

Photoelectrocatalytic degradation of rhodamine B using Ti/TiO2 electrode prepared by laser calcination method

“…TiO 2 films were often prepared by using either sol-gel method [19][20][21][22][23][24][25], pray pyrolysis [26] or sputtering [27]. Pulsed laser deposition (PLD) method became a widely used technique during the past few years due to the advantages of a simple system set-up, a wide range of deposition conditions, wide choice of materials and high instantaneous deposition rates [28][29][30][31].…”

Three-transistor one-time programmable (OTP) ROM cell array using standard CMOS gate oxide antifuse

“…Polyfusing OTP using joule heating has also been tried for CMOS analog circuits of on-chip ROM to compensate for the process variations and so on [2], but this is not reliable enough to be used for manufacturing. AF elements are more reliable and have been adopted successfully in some commercial circuits such as the via AF used in field programmable gate array (FPGA) from Actel [3] and oxide-nitride-oxide AF proposed for DRAM cell repairing at package level [4], [5].…”

Zero-Mask Contact Fuse for One-Time-Programmable Memory in Standard CMOS Processes

“…Furthermore, most of them require high-voltage programming and extra transistors. Fuse type of OTP using polysilicon [7] or silicide [8], [9] as a fuse to be broken down by electromigration or Joule heating can be programmed using lower voltage, but they usually require a large cell size.…”