CMOS VCO with three-path inductor

Lai, Wen‐Cheng; Wang, Jyun-Jhih; Zeng, Guo-Zhong; Lee, Ho-Chang

doi:10.1109/isne.2017.7968735

Cited by 3 publications

(2 citation statements)

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“…There are many approaches to reduce phase noise. In [8,9], designing a three-path inductor with a suitable quality factor, phase noise was greatly improved, but this structure increases the chip area, and on the other hand, in this approach BiCMOS as an expensive technology is used. Therefore, this structure is not suitable for IoT applications.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Low power and low phase noise VCO with dual current shaping for IoT applications

Nejadhasan¹,

Moazenian²,

Abiri³

et al. 2020

Turk J Elec Eng & Comp Sci

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In this paper, two low phase noise and power consumption VCO circuits, which are suitable for Internet of things (IoT) applications, are proposed. In the first structure, in order to have more control of the current consumption, the current shaping technique is used in the PMOS and NMOS biasing circuit. In the second structure, for increasing the oscillation amplitude and reducing the phase noise, independent biasing for the NMOS section is used. In both structures, to increase the frequency tuning range (FTR), without using a capacitor bank, the varactor is used in the biasing structure. In the first structure the supply voltage, output frequency, power consumption, and phase noise are 0.8 V, 2.44 GHz, 0.37 mW, and-117.5 dBc/Hz, respectively, but in the second structure, the supply voltage, output frequency, power consumption, and phase noise are 0.8 V, 2.44 GHz, 0.62 mW, and-120 dBc/Hz, respectively. It should be noted that the two structures are designed and simulated in 65-nm CMOS technology. Finally, the results show that the figure-of-merit for the first and second structures is-190 dBc/Hz and-190.2 dBc/Hz, respectively.

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Section: Introductionmentioning

confidence: 99%

“…In some circuits, current-reuse structures have been used to increase the main core G m without increasing the high current consumption [8,9]. Using this structure, the G m value is almost doubled and it improves phase noise, so the power consumption becomes lower than before.…”

Section: Introductionmentioning

confidence: 99%