DOI: 10.32657/10356/4520
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CMOS VLSI subsystems for low-voltage low-power applications

Abstract: My journey of PhD candidature at NTU has been a worthwhile experience, which is both challenging and fulfilling. In fact, in every important passage of our lives, there are always bound to be some special individuals whose support and contribution are essential in determining our success or failure. In my endeavor of pursuing PhD, the first person to whom, I want to thank is none other than my dissertation advisor, Associate Professor Yeo Kiat Seng. I would like to express my deepest gratitude to him for his w… Show more

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Cited by 1 publication
(14 citation statements)
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“…Power dissipated in an SRAM can be categorized into two components: active (or dynamic) power and standby (or leakage) power [37]. Each of these components comes from the memory array, the decoders and the periphery circuits such as write drivers, SA and the pre-charge circuits, etc.…”
Section: Sources Of Power Dissipation In Srammentioning
confidence: 99%
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“…Power dissipated in an SRAM can be categorized into two components: active (or dynamic) power and standby (or leakage) power [37]. Each of these components comes from the memory array, the decoders and the periphery circuits such as write drivers, SA and the pre-charge circuits, etc.…”
Section: Sources Of Power Dissipation In Srammentioning
confidence: 99%
“…Each of these components comes from the memory array, the decoders and the periphery circuits such as write drivers, SA and the pre-charge circuits, etc. The standby power is dominated by the leakage current from the memory array, thus, static current from other sources can be ignored [37]. The active and standby power of an m x n-bit SRAM can be expressed as follows: CPT: is the capacitance of the logic and driving circuits in the periphery.…”
Section: Sources Of Power Dissipation In Srammentioning
confidence: 99%
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