CMOS Voltage and Current Reference Circuits consisting of Subthreshold MOSFETs – Micropower Circuit Components for Power-Aware LSI Applications –

Ueno, K.

doi:10.5772/6871

Cited by 11 publications

(6 citation statements)

References 27 publications

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“…Compared with and Ueno [2010], our current source's temperature coefficient performance can fully satisfy the requirement of leak current stability.…”

Section: Leak Current Optimization and Power Controlmentioning

confidence: 90%

Spike-Time-Dependent Encoding for Neuromorphic Processors

Zhao

Wysocki

Liu

et al. 2015

J. Emerg. Technol. Comput. Syst.

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This article presents our research towards developing novel and fundamental methodologies for data representation using spike-timing-dependent encoding. Time encoding efficiently maps a signal's amplitude information into a spike time sequence that represents the input data and offers perfect recovery for band-limited stimuli. In this article, we pattern the neural activities across multiple timescales and encode the sensory information using time-dependent temporal scales. The spike encoding methodologies for autonomous classification of time-series signatures are explored using near-chaotic reservoir computing. The proposed spiking neuron is compact, low power, and robust. A hardware implementation of these results is expected to produce an agile hardware implementation of time encoding as a signal conditioner for dynamical neural processor designs.

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“…Compared with and Ueno [2010], our current source's temperature coefficient performance can fully satisfy the requirement of leak current stability.…”

Section: Leak Current Optimization and Power Controlmentioning

confidence: 90%

Spike-Time-Dependent Encoding for Neuromorphic Processors

Zhao

Wysocki

Liu

et al. 2015

J. Emerg. Technol. Comput. Syst.

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“…To meet the requirement of high PSR for sensor circuit in low-voltage low-power applications, circuit design considerations are conducted. At this juncture, MOSFET device operated in the sub-threshold region [ 13 ] is often preferred over the Bipolar Junction Transistor (BJT) counterparts [ 14 ]. To provide the driving characteristic, a LDO regulator or buffer-like operational amplifier (op-amp) circuit is often needed.…”

Section: Conventional Psr Enhancer Circuit and Its Design Considerationsmentioning

confidence: 99%

A CMOS PSR Enhancer with 87.3 mV PVT-Insensitive Dropout Voltage for Sensor Circuits

Zhang

Chan

2021

Sensors

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A new power supply rejection (PSR) based enhancer with small and stable dropout voltage is presented in this work. It is implemented using TSMC-40 nm process technology and powered by 1.2 V supply voltage. A number of circuit techniques are proposed in this work. These include the temperature compensation for Level-Shifted Flipped Voltage Follower (LSFVF) and the Complementary-To-Absolute Temperature (CTAT) current reference. The typical output voltage and dropout voltage of the enhancer is 1.1127 V and 87.3 mV, respectively. The Monte-Carlo simulation of this output voltage yields a mean T.C. of 29.4 ppm/°C from −20 °C and 80 °C. Besides, the dropout voltage has been verified with good immunity against Process, Temperature and Process (PVT) variation through the worst-case simulation. Consuming only 4.75 μA, the circuit can drive load up to 500 μA to yield additional PSR improvement of 36 dB and 20 dB of PSR at 1 Hz and 1 MHz, respectively for the sensor circuit of interest. This is demonstrated through the application of an enhancer on the instrumentation Differential Difference Amplifier (DDA) for sensing floating bridge sensor signal. The comparative Monte-Carlo simulation results on a respective DDA circuit have revealed that the process sensitivity of output voltage of this work has achieved 14 times reduction in transient metrics with respect to that of the conventional counterpart over the operation temperature range in typical operation condition. Due to simplicity without voltage reference and operational amplifier(s), low power and small consumption of supply voltage headroom, the proposed work is very useful for supply noise sensitive analog or sensor circuit applications.

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“…The voltage reference and bias current generators are designed in reference to the sub-threshold MOSFET technique [24]. Prior work published is for low-voltage applications below 1.8 V. However, the proposed design includes an LV-HV cascading [25] scheme to overcome the input voltage limitation and contain a higher supply voltage.…”

Section: High-voltage Reference and Bias Current Generatormentioning

confidence: 99%

An Integrated Chip High-Voltage Power Receiver for Wireless Biomedical Implants

Nair

Choi

2015

Energies

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In near-field wireless-powered biomedical implants, the receiver voltage largely overrides the compliance of low-voltage power receiver systems. To limit the induced voltage, generally, low-voltage topologies utilize limiter circuits, voltage clippers or shunt regulators, which are power-inefficient methods. In order to overcome the voltage limitation and improve power efficiency, we propose an integrated chip high-voltage power receiver based on the step down approach. The topology accommodates voltages as high as 30 V and comprises a high-voltage semi-active rectifier, a voltage reference generator and a series regulator. Further, a battery management circuit that enables safe and reliable implant battery charging based on analog control is proposed and realized. The power receiver is fabricated in 0.35-µm high-voltage Bipolar-CMOS-DMOStechnology based on the LOCOS0.35-µm CMOS process. Measurement results indicate 83.5% power conversion efficiency for a rectifier at 2.1 mA load current. The low drop-out regulator based on the current buffer compensation and buffer impedance attenuation scheme operates with low quiescent current, reduces the power consumption and provides good stability. The topology also provides good power supply rejection, which is adequate for the design application. Measurement results indicate regulator output of 4 ± 0.03 V for input from 5 to 30 V and 10 ± 0.05 V output for input from 11 to 30 V with load current 0.01-100 mA. The charger circuit manages the charging of the Li-ion battery through all if the typical stages of the Li-ion battery charging profile.

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CMOS Voltage and Current Reference Circuits consisting of Subthreshold MOSFETs – Micropower Circuit Components for Power-Aware LSI Applications –

Cited by 11 publications

References 27 publications

Spike-Time-Dependent Encoding for Neuromorphic Processors

Spike-Time-Dependent Encoding for Neuromorphic Processors

A CMOS PSR Enhancer with 87.3 mV PVT-Insensitive Dropout Voltage for Sensor Circuits

An Integrated Chip High-Voltage Power Receiver for Wireless Biomedical Implants

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