CMP characteristics and optical property of ITO thin film by using silica slurry with a variety of process parameters

Choi, Gwon-Woo; Lee, Kang-Yeon; Kim, Nam–Hoon; Park, Jin‐Seong; Seo, Yong-Jin; Lee, Woo-Sun

doi:10.1016/j.mee.2006.10.006

Cited by 19 publications

(8 citation statements)

References 16 publications

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“…The higher sheet resistance was thought to lower carrier concentration. Carrier concentration would be attributed to oxygen vacancies, such as the main carriers in films based on an oxide complex [23,24]. The oxygen vacancies would be lower due to the chemical reactions with the slurry in the CMP process.…”

Section: Resultsmentioning

confidence: 99%

Effect of Surface Treatment by Chemical-Mechanical Polishing for Transparent Electrode of Perovskite Solar Cells

Kim

Bark

2020

Energies

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Perovskite solar cells (PSCs) are usually fabricated by using the spin coating method. During the fabrication process, the surface status is very important for energy conversion between layers coated in the substrate. PSCs have multilayer-stacked structures, such as the transparent electrode layer, the perovskite layer, and a metal electrode. The efficiency and uniformity of all layers depend on the surface status of the transparent electrode coated on the glass substrate. Until now, etching methods by chemical processes have been introduced to make the substrate surface smooth and uniform by decreasing surface roughness. However, highly reactive chemical treatments can be harmful to the environment. In this study, we employed an eco-friendly chemical-mechanical polishing (CMP) process to ensure the fluorine-doped tin oxide (FTO) substrate is treated with a smooth surface. Before the perovskite layer and electron transport layer (ETL) are applied, the TiO2 layer is coated with the FTO substrate, and the surface of the FTO substrate is polished using CMP. As a result, the CMP-treated surface of the FTO substrate showed a smooth surface, and the PSCs with CMP treatment did not require conventional TiCl4 treatment.

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Section: Resultsmentioning

confidence: 99%

Effect of Surface Treatment by Chemical-Mechanical Polishing for Transparent Electrode of Perovskite Solar Cells

Kim

Bark

2020

Energies

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“…Although there have been a lot of studies Park et al, 2003;Choi et al, 2006) about the effects of process parameters on CMP performance, in which almost no study was involved in CMP of hard disk substrate with porous abrasives. The down force and the rotating speed are both important process parameters.…”

Section: Cmp Performance Of Slurry Containing Porous Silica Abrasivementioning

confidence: 99%

Polishing properties of porous silica abrasive on hard disk substrate CMP

Liu

Lei

Chen

2010

IJAT

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Chemical mechanical polishing (CMP) is the only technology to provide global planarisation of topography with a low post-planarisation slope. Abrasive is one of the key influencing factors on the surface quality during the CMP. Traditional silica abrasive is easy to cause polishing scratches since it is compact solid particle. In this work the polishing properties of porous silica abrasive in hard disk substrate CMP were investigated. The results show that the polishing down force and rotating speed have a strong influence on the material removal rate and average surface roughness of the hard disk substrate. After polishing with the slurry containing the porous silica abrasive, a smooth hard disk substrate surface was obtained.

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“…In addition to planarity, CMP must address issues concerning the surface quality of the wafer. Many academic and industry studies have shown that by controlling the process parameters and consumable sets, average surface roughness values ranging from 0.5 nm to 2 nm can be achieved [ 3 , 4 , 5 , 6 ].…”

Section: Introductionmentioning

confidence: 99%

Slurry Injection Schemes on the Extent of Slurry Mixing and Availability during Chemical Mechanical Planarization

et al. 2017

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In this study, slurry availability and the extent of the slurry mixing (i.e., among fresh slurry, spent slurry, and residual rinse-water) were varied via three different injection schemes. An ultraviolet enhanced fluorescence technique was employed to qualitatively indicate slurry availability and its flow on the pad during polishing. This study investigated standard pad center area slurry application and a slurry injection system (SIS) that covered only the outer half of the wafer track. Results indicated that the radial position of slurry injection and the alteration of fluid mechanics by the SIS played important roles in slurry mixing characteristics and availability atop the pad. Removal rates were found to decrease with slurry availability, while a higher degree of slurry mixing decreased the fraction of fresh slurry and consequently lowered the removal rate. By using a hybrid system (i.e., a combination of slurry injection via SIS and standard pad center slurry application), the polishing process benefited from higher slurry availability and higher fraction of fresh slurry than the conventional pad center slurry application and the shorter SIS, individually. This work underscores the importance of optimum slurry injection geometry and flow for obtaining a more cost-effective and environmentally benign chemical mechanical planarization process.

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CMP characteristics and optical property of ITO thin film by using silica slurry with a variety of process parameters

Cited by 19 publications

References 16 publications

Effect of Surface Treatment by Chemical-Mechanical Polishing for Transparent Electrode of Perovskite Solar Cells

Effect of Surface Treatment by Chemical-Mechanical Polishing for Transparent Electrode of Perovskite Solar Cells

Polishing properties of porous silica abrasive on hard disk substrate CMP

Slurry Injection Schemes on the Extent of Slurry Mixing and Availability during Chemical Mechanical Planarization

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