Co interaction on ZnO(000–1) investigated by scanning tunneling microscopy

Couet, S.; Seldrum, Thomas; Moisson, C.; Turover, Daniel; Sporken, R.; Dumont, Jacques

doi:10.1007/s00339-007-3972-2

Cited by 2 publications

(1 citation statement)

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“…7 For example, the energy gap in ZnO is wide enough to generate ultraviolet (UV) photons, unlike semiconductors with too narrow band gaps used in conventional lasers. 8 Because of its flexibility of forming different nanostructures, ZnO is of great interest and serves as promising material in numerous applications, particularly in piezoelectric transducers, 9 electrodes for solar cells, 10 catalyst for electronics, 11 field-effect transistors, 12 thin-film printing, 13 and transparent conductors. 14 A number of studies have been conducted to synthesize nanocrystallite ZnO using different techniques, such as hydrothermal synthesis, 15 conventional ball-milling, 16 microwave-assisted synthesis, 17 hydrolysis/condensation, 18 and sol-gel processing.…”

Section: Introductionmentioning

confidence: 99%

EPR and photoluminescence spectroscopy studies on the defect structure of ZnO nanocrystals

et al. 2012

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Structural and optical properties of ZnO nanoparticles can be fine tuned by a novel variant of milling performed at cryogenic temperatures. In this study intrinsic defect centers such as oxygen and zinc vacancies are characterized using electron paramagnetic resonance (EPR) and photoluminescence (PL) spectroscopy. Three different surface defects with different g factors were identified by EPR for which the spectral intensities change upon decreasing the crystal size. EPR and PL intensities revealed a linear correlation giving detailed information about optical and electronic properties of ZnO. The core-shell model established from optical emission and EPR suggests distinguished electronic states in the band gap belonging to negatively charged Zn vacancies and positively charged oxygen vacancies. This model indicates a correlation between red emission and positively charged oxygen vacancies, which lead to a possible transition from a typical n-type to a p-type ZnO semiconductor.

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