Co-sintered PZT ceramics for the piezoelectric transformers

Sebastian, Tutu; Kozielski, L.; Erhart, Jiřı́

doi:10.1016/j.ceramint.2015.03.274

Cited by 18 publications

(1 citation statement)

References 14 publications

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“…1,2) On the basis of these advantages, theoretical approaches and numerical analyses, as well as device fabrication, have been developed for the past several years. [16][17][18][19][20] Furthermore, investigations for using the devices on actual applications-an electronic ballast, a magnetic field sensor, and an impedance matching converter-have been conducted. [21][22][23] However, since the transformers mentioned above are composed of bulky ceramics, their size and weight are still too large for them to be integrated into microdevices for further applications.…”

Section: Introductionmentioning

confidence: 99%

Piezoelectric PZT thin-film transformers with a ring–dot structure

Kweon

Tani

Kanda

et al. 2020

Jpn. J. Appl. Phys.

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In this study, we present the design, the modeling, the fabrication, and the characterization of ring–dot type piezoelectric thin-film transformers (PTFTs). The structure of the PTFTs was a simple circular plate of Pb(Zr,Ti)O3 (PZT) thin film on a Si layer with ring–dot top electrodes and it was suspended by four pantograph-shaped bridges. We estimated the performance of the PTFTs by finite-element method simulations. In accordance with the FEM simulation model, PZT thin films were deposited on silicon-on-insulator substrates and microfabricated into PTFTs with ring–dot structures. From the produced devices, an admittance circle measurement was carried out, enabling us to predict performance. The actual output characteristics of the PTFTs were clearly observed at a resonance frequency (f r) of 4.57 MHz. At this point, a voltage gain of 0.22 and a power density of 704 W cm−3 were measured, under a load resistance (R L) of 22 Ω.

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