CO2 and H2 detection with a CHx/porous silicon-based sensor

Gabouze, N.; Belhousse, S.; Cheraga, H.; Ghellai, N.; Ouadah, Y.; Belkacem, Y.; Keffous, A.

doi:10.1016/j.vacuum.2006.01.004

Cited by 34 publications

(10 citation statements)

References 10 publications

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“…%) /ethanol (99.8 Wt. %) /H 2 O (by different VOL x/y/z) as an electrolyte, at various current densities, preparation times and anodization lengths [17]. As we know, the mechanism of porous silicon formation in neutral fluoride medium is associated with the two-step mechanism of silicon dissolution [18].…”

Section: Methodsmentioning

confidence: 99%

Electrical Properties of Porous Silicon for N2 Gas Sensor

Bahar¹,

Eskandari²,

Shaban³

2017

J Theor Comput Sci

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The application of porous silicon (PSi) for gas sensing devices has gained a considerable attention in the last decade. This work considers the electrical features of PSi layers prepared by electrochemical etching. We find that in order to get a better understanding of the absorption properties of PSi surface, it is necessary to know how the PSi morphology depends on the etching parameters. The physical structure of PSi, i.e., porosity, and pore size distribution can be controlled by changing the Hydrofluoric Acid concentration, current density, anodizing length and etching time in anodizing procedure. We describe our test system for gas sensors and investigate on the electrical behavior of PSi layers (p-type) in N 2 gas for various fabrication conditions. The results show that the current density increases significantly as N 2 gas is adsorbed. The measurements of the I-V characteristics were carried out at atmospheric pressure, room temperature, and with N 2 gas as well.

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Section: Methodsmentioning

confidence: 99%

Electrical Properties of Porous Silicon for N2 Gas Sensor

Bahar¹,

Eskandari²,

Shaban³

2017

J Theor Comput Sci

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“…8, shows that, for different temperatures the introduction of CO 2 gas at 500 ppm pressure induce a change in the capacitance-voltage values [23]. One can observe that the sensor behaves as a metal insulator semiconductor (MIS) structure as observed by several authors [9,11]. For the Al/CH x /PS/p-Si/Al structure biased negatively, the capacitance decreases with bias voltage reaches a maximum at about -1volt then stabilizes.…”

Section: Capacitance Measurementsmentioning

confidence: 67%

Temperature measurement using a Chx/porous silicon/Si structure encapsulated in a CO2 rich environment

Chiali¹,

Ghellai²,

Gabouze³

et al. 2010

Advances in Materials Sciences

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This work reports on the possible use of microporous silicon as a temperature sensor. This work is based on previous published works [7, 8, and 9]. The device is based on hydrocarbon group (CH x ) / porous silicon (PS) /Si structure. The porous sample was coated with hydrocarbons groups deposited by the plasma of methane /argon mixture. Current-voltage characteristics have been investigated as a function of temperature in the range 20 0 C-70°C.The results show that for a constant voltage in the range 0.7-1V, the current increases linearly with the environment temperature reaches a maximum at 70°C and then stabilizes. This result suggests that the developed structure can be used for sensing temperatures not exceeding 70°C.

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“…In addition, the fabricated device shows relative sensitivity of 35 % to the oxygen gas at room temperature. The percentage of absolute relative sensitivity, S, is defined as (1), where, Iₒ and I correspond to current obtained before and after gas exposure, respectively [8]- [9].…”

Section: Resultsmentioning

confidence: 99%

Submicron Wire Fabrication on Silicon Substrate Based on Atomic Force Microscopy Technique

Asmah¹,

Hutagalung²,

Sidek³

2013

J. Phys.: Conf. Ser.

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Abstract. This article presents on a simple sub-micron wire fabrication by means of local anodic oxidation atomic force microscopy technique. The silicon-based structure consists of two adjacent terminals serve as probing pads and connected with a wire width less than 200 nm. The pad dimension and wire length are 49 µm 2 and 11 µm each, respectively. The fabrication process is conducted at room temperature 24 -27 °C with 50 -60 % relative humidity and operated by commercial atomic force microscopy without any modification done. Furthermore, the local oxidation is performed using gold coated AFM probe tip and assisted by the used of special language supported by the equipment software. In addition, 9.0 V applied voltage with 2 µm / sec writing speed is used to realize the oxidation process. I-V characteristic of bare device shows there is a current flow through the device when a range of voltage is applied. By using this local anodic oxidation technique, the silicon wire-based structure is fabricated and used as gas sensor sensing part. The silicon device demonstrates an increase in resistance as introduced to gas environment. The silicon wire device shows relative sensitivity of 35 % to the oxygen gas.

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CO2 and H2 detection with a CHx/porous silicon-based sensor

Cited by 34 publications

References 10 publications

Electrical Properties of Porous Silicon for N2 Gas Sensor

Electrical Properties of Porous Silicon for N2 Gas Sensor

Temperature measurement using a Chx/porous silicon/Si structure encapsulated in a CO2 rich environment

Submicron Wire Fabrication on Silicon Substrate Based on Atomic Force Microscopy Technique

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