Coaxial GaAs/(In,Ga)As Dot-in-a-Well Nanowire Heterostructures for Electrically Driven Infrared Light Generation on Si in the Telecommunication O Band

Abstract

Core-shell GaAs-based nanowires monolithically integrated on Si constitute a promising class of nanostructures that could enable light emitters for fast inter-and intrachip optical connections. We introduce and fabricate a novel coaxial GaAs/(In,Ga)As dot-in-a-well nanowire heterostructure to reach spontaneous emission in the Si transparent region, which is crucial for applications in Si photonics. Specifically, we achieve room temperature emission at 1.27 µm in the telecommunication O band. The presence of quantum dots in the heterostructure is evidenced by a structural analysis based on scanning transmission electron microscopy. The spontaneous emission of these nanowire structures is investigated by cathodoluminescence and photoluminescence spectroscopy. Thermal redistribution of charge carriers to larger quantum dots explains the long wavelength emission achieved at room temperature. Finally, in order to demonstrate the feasibility of the presented nanowire heterostructures as electrically driven light emitters monolithically integrated on Si, a light emitting diode is fabricated exhibiting room-temperature electroluminescence at 1.26 µm.

Drastic effect of sequential deposition resulting from flux directionality on the luminescence efficiency of nanowire shells

“…3 Furthermore, in such structures the strain is partitioned between the core and shell, thus enabling the combination of highly lattice-mismatched materials. 4 Concrete examples of devices and applications based on core-shell NWs include solar cells, [5][6][7][8] solar water splitting cells, 9 light-emitting diodes, 10,11 and lasers. [12][13][14] When NW shells are grown by directional deposition techniques such as molecular beam epitaxy (MBE), for which the previous references have been selected, material is deposited at a given moment only on those surface areas that are in direct line of sight for the impinging flux.…”

Drastic Effect of Sequential Deposition Resulting from Flux Directionality on the Luminescence Efficiency of Nanowire Shells

“…Furthermore, in such structures the strain is partitioned between the core and shell, thus enabling the combination of highly lattice-mismatched materials . Concrete examples of devices and applications based on core–shell NWs include solar cells, − solar water splitting cells, light-emitting diodes, , and lasers. − …”

“…3 Furthermore, in such structures the strain is partitioned between the core and shell, thus enabling the combination of highly lattice-mismatched materials. 4 Concrete examples of devices and applications based on core−shell NWs include solar cells, 5−8 solar water splitting cells, 9 light-emitting diodes, 10,11 and lasers. 12−14 When NW shells are grown by directional deposition techniques such as molecular beam epitaxy (MBE), for which the previous references have been selected, the material is deposited at a given moment only on those surface areas that are in direct line of sight for the impinging flux.…”

Monolithic integration of InP on Si by molten alloy driven selective area epitaxial growth

“…The latter two families of techniques are more promising, due to their flexible integration into Si-based circuits and avoiding usage of III-V substrates, complicated wafer bonding techniques and difficulties in alignment of III-V elements to the Si-circuit. They have subsequently already been used to obtain high-quality III-V structures grown on Si for laser applications [23,[29][30][31]. Besides effective dislocation filtering, the SAG approaches have been used to produce highly ordered nanostructure arrays with precise positioning [30,[32][33][34].…”