Coaxial semipolar InGaN/GaN microwire array LED with substantially suppressed efficiency droop

Luo, Xingjun; Song, Weidong; Wang, Hu; Sun, Yiming; Zhang, Bolin; Wang, Linyuan; Guo, Jiaqi; He, Longfei; Zhang, Kang; Li, Shuti

doi:10.1016/j.jlumin.2019.117014

Cited by 5 publications

(21 citation statements)

References 28 publications

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“…External strain can induce an external electric field, which can tune the energy band by coupling with the internal polarization electric field. [ 25,32 ] When the device suffers from compressive strain, the direction of external piezoelectric polarization is opposite to the orientation of original polarization, which weakens the tilt of the energy band in MQWs and increases the overlap of electron–hole wave function, leading to the radiative recombination enhancements (Figure 6a). This agrees well with the increase in PL intensity and EL intensity as a function of the compressive strain, as shown in Figure 3b and 4d.…”

Section: Resultsmentioning

confidence: 99%

Strain‐Modulated Light Emission Properties in a Single InGaN/GaN Multiple‐Quantum‐Well Microwire‐Based Flexible Light‐Emitting Diode

et al. 2021

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Micro/nanowire light‐emitting diodes (LEDs) have inspired considerable research interests due to their potential applications in microdisplays and micro/nano‐optoelectronic integrated systems. Herein, a single InGaN/GaN multiple‐quantum‐well (MQW) microwire‐based flexible LED with high‐efficiency current injection and spreading is fabricated, and the performance modulation of the device by external strain is further studied. The results show that under external compressive strains, the output power is enhanced and the peak wavelength is blue shifted; on the contrary, the output power declines and the peak wavelength is red shifted under stretch strains. Compared with strain‐free devices, the flexible LED achieves the best performance at a − 1% compressive strain, with external quantum efficiency (EQE) increasing by 14.2% and efficiency droop reducing by 17.9%. The effective improvements are attributed to external strain‐induced piezoelectric polarization charges presented at local junctions/interfaces tuning the energy band. Herein, an efficient external modulation of light emission properties in a single InGaN/GaN MQW microwire LED is presented.

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Section: Resultsmentioning

confidence: 99%

Strain‐Modulated Light Emission Properties in a Single InGaN/GaN Multiple‐Quantum‐Well Microwire‐Based Flexible Light‐Emitting Diode

et al. 2021

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“…Growing LEDs along a semi-polar or a non-polar orientation seems to be a promising way to achieve polarized light source. Semi-polar and non-polar orientations were initially introduced to reduce the piezoelectric fields in the active region, by stacking the quantum wells along a direction off an angle to the conventional c-direction [11][12][13][14][15][16]. In the same time, semi-polar and non-polar orientations break the crystal symmetry of the growth plane, resulting in the anisotropic strain in the quantum wells.…”

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confidence: 99%

“…Semi-polar (20-21) GaN MQWs samples were grown on semi-polar (20-21) GaN templates, which were overgrown on patterned sapphire substrates [27][28][29]. Those sapphire substrates have a pattern of grooves oriented along the [1-100] direction, with periodic distribution along the [11][12][13][14][15][16][17][18][19][20][21][22][23][24] direction. The growth process was carried out in a metal organic chemical vapor deposition system.…”

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confidence: 99%

“…A depolarizer was also inserted between the polarizer and the monochromator to eliminate the influence from the monochromator. [11][12][13][14][15][16][17][18][19][20] and the [10][11][12][13][14] directions. [11][12][13][14][15][16][17][18][19][20] directions in the growth plane.…”

mentioning

confidence: 99%

“…[11][12][13][14][15][16][17][18][19][20] and the [10][11][12][13][14] directions. [11][12][13][14][15][16][17][18][19][20] directions in the growth plane. Lattice parameters are different along these two orthogonal directions, resulting in the symmetry breaking of the bi-axial stress in growth plane.…”

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confidence: 99%

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Anisotropic structural and optical properties of semi-polar (20–21) InGaN/GaN multiple quantum wells grown on patterned sapphire substrates

Zhang,

Gong,

Xing

et al. 2024

Semicond. Sci. Technol.

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Semi-polar orientation owns the advantage of reduced internal piezoelectric fields by tilting the growth direction away from the conventional c-direction. The crystal symmetry and the balanced biaxial stress in growth plane are inevitably broken in the semi-polar orientation, leading the appearance of anisotropic properties in both structural and optical performance. This report has investigated the structural and optical properties of semi-polar (20-21) InGaN/GaN multiple quantum wells overgrown on patterned sapphire substrates with a wide wavelength range from 415 nm to 521 nm. Polarization switching was not observed on these semi-polar (20-21) samples. The polarization ratio monotonically increases from 0.18 to 0.43 with increasing the emission wavelength, and the energy difference simultaneously increases from 17 meV to 29 meV. As increasing the excitation laser power, the polarization ratio drops slightly while the energy difference remains stable, indicating a saturation of the recombination to the topmost valence subband. These results help exploit the anisotropic structural and optical properties of semi-polar nitrides and promote the development of highly polarized light source for the application in the display and communication fields.

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Tunable Emission Wavelength and Chromaticity Electroluminescence Realized in Ho Doped ZnO Microspheres Heterojunction

Wang

Huang

et al. 2023

IEEE Electron Device Lett.

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Coaxial semipolar InGaN/GaN microwire array LED with substantially suppressed efficiency droop

Cited by 5 publications

References 28 publications

Strain‐Modulated Light Emission Properties in a Single InGaN/GaN Multiple‐Quantum‐Well Microwire‐Based Flexible Light‐Emitting Diode

Strain‐Modulated Light Emission Properties in a Single InGaN/GaN Multiple‐Quantum‐Well Microwire‐Based Flexible Light‐Emitting Diode

Anisotropic structural and optical properties of semi-polar (20–21) InGaN/GaN multiple quantum wells grown on patterned sapphire substrates

Tunable Emission Wavelength and Chromaticity Electroluminescence Realized in Ho Doped ZnO Microspheres Heterojunction

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