Cobalt containing nano-islands on Ge(111)-c(2×8)

Mocking, Tijs F.; Poelsema, Bene; Zandvliet, Henricus J.W.

doi:10.1016/j.susc.2013.01.007

Cited by 6 publications

(11 citation statements)

References 35 publications

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“…The occurrence of ring-like clusters has been also reported when 0.25 ML Co, deposited onto Si(111) surface at 373 K was then annealed to 943 K, and interpreted in terms of the formation of an intermediate stage between the clean and silicide-Si interface [25]. Finally, we would like to underline that the appearance of ring-like features has not been reported for the Co/Ge(111) surface [16].…”

Section: Resultssupporting

confidence: 55%

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Thermal evolution of the morphology of Ni/Ge(111)-c(2 × 8) surface

Tomaszewska¹,

Huang

et al. 2014

Materials Science-Poland

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The thermal evolution of the interface formed by room temperature (RT) deposition of Ni atoms (coverage 0.1, 0.5, 1.2 ML) onto a Ge(111)-c(2 × 8) surface has been studied with the use of scanning tunneling microscopy (STM). Atomically resolved STM images revealed that, at RT, the boundaries between the different c(2 × 8) domains acted as nucleation sites for Ni atoms. After annealing the surface with deposited material at 473 to 673 K the formation of nano-sized islands of Ni x Ge y compounds was observed. In addition, the occurrence of ring-like structures was recorded. Based on the dual-polarity images the latter were assigned to Ni atoms adsorbed on Ge adatoms.

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Section: Resultssupporting

confidence: 55%

“…In search for appropriate materials for electric contacts the interaction of transition metals (TMs) deposited onto germanium surface has been extensively studied [10][11][12][13][14][15][16][17]. It has been reported that Ni films deposited onto Ge surface form a variety of Ni x Ge y phases upon annealing [18,19].…”

Section: Introductionmentioning

confidence: 99%

Thermal evolution of the morphology of Ni/Ge(111)-c(2 × 8) surface

Tomaszewska¹,

Huang

et al. 2014

Materials Science-Poland

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“…The second kind of clusters is obtained when one, two or three Si atoms are added on the triangle. The

\sqrt{13} \times \sqrt{13} - R 13.9 °

reconstruction obtained after deposition of Co on a Ge(111)– c (2 × 8) surface has also been studied by Mocking et al using STM . The images of the reconstructed domains are uniform and exhibit only one kind of clusters, which are quite analogous to the darker clusters recorded for Co on Si(111)–(7 × 7).…”

Section: Introductionmentioning

confidence: 80%

“…Figures c and d have been recorded by Mocking et al . on samples obtained after depositing 0.1 ML of Co on Ge(111)– c (2 × 8) and annealing at 500 K for 5 min . In the filled‐state image (Fig.…”

Section: Resultsmentioning

confidence: 99%

“…At very low Co coverages, various surface reconstructions exist for both Co–Si and Co–Ge systems. In particular, a

\sqrt{13} \times \sqrt{13} - R 13.9 °

ordering has been observed by depositing and postannealing sub‐monolayer amounts of Co on a Si(111)–(7 × 7) surface but also on a

\sqrt{3} \times \sqrt{3}

Ag/Ge(111) substrate,, or on Ge(111)– c (2 × 8) . In a previous work, we have resolved the atomic structure of the

\sqrt{13} \times \sqrt{13} - R 13.9 °

Co–Si(111) surface by means of scanning tunnelling microscopy (STM) measurements and density functional theory (DFT) calculations .…”

Section: Introductionmentioning

confidence: 99%

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DFT characterization of nanostructured germanium surfaces induced by cobalt atoms

Stephan

Hanf

Wetzel

et al. 2013

Surf. Interface Anal.

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By deposition in ultra‐high vacuum of cobalt on a Ge(111)–c(2 × 8) surface, Mocking et al. obtained a bold13×bold13−R13.9° surface reconstruction. In the present paper, we analyse the related atomic structure, proposed by these authors, by means of density functional theory calculations. The surface presents ordered clusters that consist of six Ge atoms arranged in a triangle, lying above three Co atoms. The latter are located at substitutional positions within the top plane of the Ge(111) first bilayer. These clusters are similar to what is obtained on part of the Co‐induced Si(111) bold13×bold13−R13.9° surface. For this surface, the clusters are terminated either by six Si atoms or by one, two or three adatoms above the six Si atoms. As the Co–Ge clusters systematically display six protrusions in the scanning tunnelling microscopy measurements by Mocking et al., we investigated why Ge adatoms are not present. Comparison of the Gibbs energy, interatomic distances, as well as charge density indicates that Ge adatoms on top of Co‐Ge clusters are less stable than Si adatoms in the Co‐Si system. Copyright © 2013 John Wiley & Sons, Ltd.

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