Cobalt disilicide as dopant diffusion source for polysilicon gates in MOS devices

Lin, J.; Chen, W.; Banerjee, Sanjay K.; Lee, J.; Magee, C. W.

doi:10.1007/bf02666415

Cited by 6 publications

(1 citation statement)

References 22 publications

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“…Because of its superior characteristics compared to TiSi , such as no phase transformation issue, no bridging effect, and better chemical stability, CoSi has been paid a lot of attention [3], [4]. However, one potential problem with CoSi is its inferior thermal stability during the thermal annealing.…”

Section: Introductionmentioning

confidence: 99%

Suppression of cobalt silicide agglomeration using nitrogen (N/sub 2//sup +/) implantation

Sun

Liaw

Hsu

1998

IEEE Electron Device Lett.

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In this paper, the effects of nitrogen coimplantation with boron into p + -poly gate in PMOSFET's on the agglomeration effects of CoSi2 are studied. The thermal stability of CoSi2/poly-Si stacked layers can be significantly improved by using nitrogen implantation. Samples with 40-nm Cobalt Silicide (CoSi2) on 210-nm poly-Si implanted by 2 2 10 15 /cm 2 N + 2 are thermally stable above 950 C for 30 s in N2 ambient. If the dose of nitrogen is increased up to 6 2 10 15 /cm 2 , the sheet resistance of CoSi2 film is not increased at all, and TEM photographs show that the agglomeration of CoSi 2 film is completely suppressed.

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Section: Introductionmentioning

confidence: 99%

Suppression of cobalt silicide agglomeration using nitrogen (N/sub 2//sup +/) implantation

Sun

Liaw

Hsu

1998

IEEE Electron Device Lett.

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Formation of ultra-shallow junctions using epitaxial CoSi2 thin film as diffusion sources

Bae

Kim

Hong³

et al. 1997

Thin Solid Films

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Degradation mechanisms and improvement of thermal stability of CoSi2/polycrystalline Si layers

Chen

Banerjee

Lee

1994

Applied Physics Letters

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Degradation mechanisms of CoSi2/polycrystalline Si (polycide) films have been investigated. CoSi2 was formed on various silicon substrates (stacked or one-layer structures composed of polycrystalline Si 800–10 800 Å and amorphous Si 800–3000 Å). The thermal stability of these silicide films were examined using four-point probe measurement. It was found that the microstructure of the underlying silicon substrate, rather than the grain size of the CoSi2 or the silicide/polycrystalline Si interface, has the greatest influence on the thermal stability of the polycide films. The CoSi2 formed on as-deposited amorphous Si provides the maximum thermal stability. Those films are stable at 1000 °C up to 120 s, even for undoped polycide films.

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Cobalt disilicide as dopant diffusion source for polysilicon gates in MOS devices

Cited by 6 publications

References 22 publications

Suppression of cobalt silicide agglomeration using nitrogen (N/sub 2//sup +/) implantation

Suppression of cobalt silicide agglomeration using nitrogen (N/sub 2//sup +/) implantation

Formation of ultra-shallow junctions using epitaxial CoSi2 thin film as diffusion sources

Degradation mechanisms and improvement of thermal stability of CoSi2/polycrystalline Si layers

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