Cobalt Silicide Formation Characteristics in a Single Wafer Rapid Thermal Furnace (SRTF) System

Malik, Igor J.; Ouaknine, Michel; Ueda, Takeshi; Fukada, Takashi; Yoo, Woo Sik; Erbetta, D.; Marangon, T.

doi:10.1109/rtp.2006.368005

Cited by 4 publications

(17 citation statements)

References 3 publications

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“…However, metals tend to diffuse into silicon and to form metal silicides which have much lower surface reactivity. For instance, for nickel, cobalt or iron deposited on silicon, formation of silicides were observed to occur at temperatures as low as 225°C for nickel [172,173], 450°C for cobalt [174] and 800-850°C for iron [175,176]. The propensity of a given metal to form silicides is apparent in the silicide formation enthalpies as those shown in Figure 7.…”

Section: Chemical Reactions: Redox Alloy Formationmentioning

confidence: 91%

Current understanding of the growth of carbon nanotubes in catalytic chemical vapour deposition

Jourdain

Bichara

2013

Carbon

503

334

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Due to its higher degree of control and its scalability, catalytic chemical vapour deposition is now the prevailing synthesis method of carbon nanotubes. Catalytic chemical vapour deposition implies the catalytic conversion of a gaseous precursor into a solid material at the surface of reactive particles or of a continuous catalyst film acting as a template for the growing material. Significant progress has been made in the field of nanotube synthesis by this method although nanotube samples still generally suffer from a lack of structural control. This illustrates the fact that numerous aspects of the growth mechanism remain ill-understood. The first part of this review is dedicated to a summary of the general background useful for beginners in the field. This background relates to the carbon precursors, the catalyst nanoparticles, their interaction with carbonaceous compounds and their environment. The second part provides an updated review of the influence of the synthesis parameters on the features of nanotube samples: diameters, chirality, metal/semiconductor ratio, length, defect density and catalyst yield. The third part is devoted to important and still open questions, such as the mechanism of nanotube nucleation and the chiral selectivity, and to the hypotheses currently proposed to answer them

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Section: Chemical Reactions: Redox Alloy Formationmentioning

confidence: 91%

Current understanding of the growth of carbon nanotubes in catalytic chemical vapour deposition

Jourdain

Bichara

2013

Carbon

503

334

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“…6,8,16,18 Dopant species and concentration also play important roles in silicide formation and defect generation. 9,12,13 Tungsten silicide, titanium silicide, cobalt silicide and nickel silicide formation studies on various Si phases and structures, including silicon-on-insulator (SOI) wafers, have been reported for several decades.…”

Section: Towards Contact Resistance Minimization Through Cosi 2 Formamentioning

confidence: 99%

“…6,8,16,18 Dopant species and concentration also play important roles in silicide formation and defect generation.…”

mentioning

confidence: 99%

“…Significant effort has been expended to develop low resistivity junctions, industry wide. [7][8][9][10][11][12][13][14][15][16][17][18] However, low resistivity contact formation has not received significant attention, other than changing the silicide of choice, depending on required minimum line width or device node parameters. Silicidation process is believed to be well understood and established.…”

mentioning

confidence: 99%

“…It is well known that silicide formation on different Si phases (amorphous, polycrystalline or monocrystalline) takes place at different temperatures and at different rates. 6,8,16,18 Dopant species and concentration also play important roles in silicide formation and defect generation. 9,12,13 Tungsten silicide, titanium silicide, cobalt silicide and nickel silicide formation studies on various Si phases and structures, including silicon-on-insulator (SOI) wafers, have been reported for several decades.…”

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confidence: 99%

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Towards Contact Resistance Minimization through CoSi₂Formation Process Optimization on P-Doped Poly-Si by Hot Wall-Based Rapid Thermal Annealing

Lee

Kim

et al. 2015

ECS J. Solid State Sci. Technol.

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The effect of annealing temperature and time on the resulting resistivity of CoSi 2 contacts with P-doped poly-Si was investigated using a single wafer furnace-based (hot wall) rapid thermal annealing (RTA) system. To achieve low resistivity contacts, CoSi 2 formation process optimization was done by detailed design of experiment (DOE). Sheet resistance (Rs) response surface plots as a function of annealing temperature and time for 1 st step and 2 nd step RTA processes showed a very wide process window. The hot wall RTA resulted in significantly (>20%) lower Rs, over a very wide process window, compared to the equivalent RTA process using conventional tungsten halogen lamp-based (cold wall) RTA systems. Dopant (P) depth profiling results by secondary ion mass spectroscopy (SIMS) revealed that the P atoms in the CoSi 2 film and at the CoSi 2 /P-doped poly-Si interface, redistribute very differently under different RTA conditions. The CoSi 2 formation process was optimized utilizing characteristics of P pile-up near the CoSi 2 /P-doped poly-Si interface to suppress P depletion from the P-doped poly-Si layer for contact resistance minimization. Low resistivity junctions and low resistivity contacts are essential for fabricating high performance devices for advanced device nodes.1-6 A high contact resistance negatively affects device operation speed and generates undesired local heating. Any variations in the contact resistance among devices within a chip can significantly lower the overall chip performance and possibly device yield in production. Significant effort has been expended to develop low resistivity junctions, industry wide.7-18 However, low resistivity contact formation has not received significant attention, other than changing the silicide of choice, depending on required minimum line width or device node parameters. Silicidation process is believed to be well understood and established. Once the candidate silicide material has been chosen for the device node, relatively small improvements in resistivity have been made in recent years, despite silicidation process optimization which includes modifications of process steps and integration schemes. Tight process control and accumulation of small improvements in every process step are required in developing and volume manufacturing of advanced devices.It is well known that silicide formation on different Si phases (amorphous, polycrystalline or monocrystalline) takes place at different temperatures and at different rates. 6,8,16,18 Dopant species and concentration also play important roles in silicide formation and defect generation.9,12,13 Tungsten silicide, titanium silicide, cobalt silicide and nickel silicide formation studies on various Si phases and structures, including silicon-on-insulator (SOI) wafers, have been reported for several decades.1-18 Sometimes, ion implantation on silicide layers is done to reduce line width dependence thus potentially extending the lifecycle of the selected silicide for the next generation devices with narrower line ...

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Process Optimization of CoSi₂ Formation on P-Doped Poly-Si by Hot Wall-Based Rapid Thermal Annealing

Lee

Kim

et al. 2015

ECS Trans.

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To achieve low resistivity contacts, the effect of annealing temperature and time on the resulting resistivity of CoSi2 contacts with P-doped poly-Si was investigated using a single wafer furnace-based (hot wall) rapid thermal annealing (RTA) system. The hot wall RTA resulted in significantly (>20%) lower sheet resistance (Rs) from the equivalent RTA process using conventional tungsten halogen lamp-based (cold wall) RTA systems over a very wide process window. Dopant (P) depth profiling results by secondary ion mass spectroscopy (SIMS) revealed that the P atoms in the CoSi2 film and at the CoSi2/P-doped poly-Si interface, redistribute very differently under different RTA conditions. The CoSi2 formation process was optimized utilizing characteristics of P pile-up near the CoSi2/P-doped poly-Si interface to suppress P depletion from the P-doped poly-Si layer.

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Cobalt Silicide Formation Characteristics in a Single Wafer Rapid Thermal Furnace (SRTF) System

Cited by 4 publications

References 3 publications

Current understanding of the growth of carbon nanotubes in catalytic chemical vapour deposition

Current understanding of the growth of carbon nanotubes in catalytic chemical vapour deposition

Towards Contact Resistance Minimization through CoSi₂Formation Process Optimization on P-Doped Poly-Si by Hot Wall-Based Rapid Thermal Annealing

Process Optimization of CoSi₂ Formation on P-Doped Poly-Si by Hot Wall-Based Rapid Thermal Annealing

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Cobalt Silicide Formation Characteristics in a Single Wafer Rapid Thermal Furnace (SRTF) System

Cited by 4 publications

References 3 publications

Current understanding of the growth of carbon nanotubes in catalytic chemical vapour deposition

Current understanding of the growth of carbon nanotubes in catalytic chemical vapour deposition

Towards Contact Resistance Minimization through CoSi2Formation Process Optimization on P-Doped Poly-Si by Hot Wall-Based Rapid Thermal Annealing

Process Optimization of CoSi2 Formation on P-Doped Poly-Si by Hot Wall-Based Rapid Thermal Annealing

Contact Info

Product

Resources

About

Towards Contact Resistance Minimization through CoSi₂Formation Process Optimization on P-Doped Poly-Si by Hot Wall-Based Rapid Thermal Annealing

Process Optimization of CoSi₂ Formation on P-Doped Poly-Si by Hot Wall-Based Rapid Thermal Annealing