Code: A novel MOVPE technique for the single stage growth of buried ridge double heterostructure lasers and waveguides

Selective-Area Growth of Magnetic Garnet Crystals by Liquid-Phase Epitaxy and Its Application to Waveguide Devices

“…[1][2][3] III-V compound semiconductors are grown on nonplanar or SiO 2 masked substrates. This technique is very attractive because of the high degree of freedom in the design of advanced devices.…”

InGaAs quantum wires grown by low pressure metalorganic chemical vapor deposition on InP V-grooves

“…We have performed systematic investigations in this field since the growth mechanism of InP on contoured substrates are not known in detail, e.g., depending largely on the dimensions of the corrugation. [12][13][14] We obtain high interface quality and a minimum planarization of the V-groove tip at low growth temperature (T G ϭ500°C͒ and at a high V/III ratio ͑2800͒.…”

Non-planar and masked-area epitaxy by organometallic chemical vapour deposition

“…It has been found [31] that, at least under some growth conditions, InGaAs and InAlAs do not grow on { l l l}A/B, while InP does. This behaviour has been used to fabricate, in a single step, buried ridge double-heterostructure InGaAs/InP lasers, by growth on [OlT]oriented ridges, and buried ridge InGaAspnAlAs waveguides by growth on [Olll-or [OlTI-oriented ridges defined in (100) InP substrates [31].…”

“…It has been found [31] that, at least under some growth conditions, InGaAs and InAlAs do not grow on { l l l}A/B, while InP does. This behaviour has been used to fabricate, in a single step, buried ridge double-heterostructure InGaAs/InP lasers, by growth on [OlT]oriented ridges, and buried ridge InGaAspnAlAs waveguides by growth on [Olll-or [OlTI-oriented ridges defined in (100) InP substrates [31]. However, the performances of the devices have been poor, probably due to composition deviation and dislocation generation which can occur in these materials systems, as w i l l be elaborated below.…”