Codoping characteristics of Zn with Mg in GaN

Abstract

The doping characteristics of Mg-Zn codoped GaN films grown by metalorganic chemical vapor deposition are investigated. By means of the concept of Mg-Zn codoping technique, we have grown p-GaN showing a low electrical resistivity ͑0.72 ⍀ cm͒ and a high hole concentration (8.5 ϫ10 17 cm Ϫ3) without structural degradation of the film. It is thought that the codoping of Zn atoms with Mg raises the Mg activation ratio by reducing the hydrogen solubility in p-GaN. In addition, the measured specific contact resistance of Mg-Zn codoped GaN film is 5.0ϫ10 Ϫ4 ⍀ cm 2 , which is one order of magnitude lower than that of Mg doped only GaN film (1.9ϫ10 Ϫ3 ⍀ cm 2).

Synthesis and characterization of Zn-doped GaN crystals by simultaneous carbothermal reduction and nitridation of Ga2O3 and ZnO

“…In all the spectra, the band-edge peak at 365 nm is observed with an additional large peak at $ 460 nm. The latter is attributed to Zn substituted into the Ga sites, according to the previous reports [5,7,16]. Spectral intensities increase with increasing Zn doping.…”

“…Epitaxial GaN films doped with Zn prepared by vapor phase reaction exhibits a broad band at $ 430 nm with near band edge emission [6]. To improve the electrical and structural properties of GaN films, Mg-Zn co-doped GaN films were grown by MOCVD [7].…”

Comprehensive Theoretical and Experimental Studies on Iii-Nitrides, Doping, Nano-Structures and Leds

“…Other surfaces could also be observed in nitrides nano-structures, i.e. (1-102) r-planes, (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22)(23) n-planes. For epitaxy GaN thin film or single crystals, determining the orientation is not straight-forward and will depend on growth conditions, substrates or doping.…”

“…[19][20][21][22][23] Recent advances in crystal growth technology have shown that the issues of low solubility and hydrogen passivation can, at least to some extent, be overcome by using non-equilibrium growth techniques and high-temperature annealing. However, alleviating the more fundamental problem of high activation energies has, to date, not yet been satisfactorily achieved.…”

“…The Wz structure consists of two interpenetrating hexagonal close-packed sub-lattices with different type of atom, offset along the c-axis by 5/8 of the cell height (5c/8). Three surfaces are of special importance in nitrides, which are (0001) c-planes, (11)(12)(13)(14)(15)(16)(17)(18)(19)(20) a-planes, and (1-100) m-planes. Other surfaces could also be observed in nitrides nano-structures, i.e.…”