Coessential-connection by microwave plasma chemical vapor deposition: a common process towards wafer scale single crystal diamond

Shu, Guoyang; Dai, Bing; Bolshakov, A. P.; Lee, Kang; Zhao, Junhong; Han, Jiecai; Zhu, Jiaqi

doi:10.1080/26941112.2020.1869511

Cited by 20 publications

(6 citation statements)

References 96 publications

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“…Single‐crystal diamond (SCD) is a promising material for high‐performance and high‐reliability MEMS devices owing to its outstanding physical, chemical, mechanical, and electrical properties. [ 30–42 ] SCD MEMS resonators combined with galfenol (FeGa), a material with a large magnetostrictive coefficient of 375 ppm and an ultrahigh Curie temperature of 675°C, provide an ideal scheme for high‐sensitivity and thermal‐stability magnetic transducers via the delta‐E (Δ E ) effect. [ 43,44 ] To achieve highly integrated high‐sensitivity SCD MEMS transducers, all‐electrical on‐chip actuation and sensing are required.…”

Section: Introductionmentioning

confidence: 99%

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On‐chip Diamond MEMS Magnetic Sensing through Multifunctionalized Magnetostrictive Thin Film

Zhang

Chen

et al. 2023

Adv Funct Materials

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Electrically integrable, high-sensitivity, and high-reliability magnetic sensors are not yet realized at high temperatures (500 °C). In this study, an integrated on-chip single-crystal diamond (SCD) micro-electromechanical system (MEMS) magnetic transducer is demonstrated by coupling SCD with a large magnetostrictive FeGa film. The FeGa film is multifunctionalized to actuate the resonator, self-sense the external magnetic field, and electrically readout the resonance signal. The on-chip SCD MEMS transducer shows a high sensitivity of 3.2 Hz mT −1 from room temperature to 500 °C and a low noise level of 9.45 nT Hz −1/2 up to 300 °C. The minimum fluctuation of the resonance frequency is 1.9 × 10 −6 at room temperature and 2.3 × 10 −6 at 300 °C. An SCD MEMS resonator array with parallel electric readout is subsequently achieved, thus providing a basis for the development of magnetic image sensors. The present study facilitates the development of highly integrated on-chip MEMS resonator transducers with high performance and high thermal stability.

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Section: Introductionmentioning

confidence: 99%

“…Single-crystal diamond (SCD) is a promising material for high-performance and high-reliability MEMS devices owing to its outstanding physical, chemical, mechanical, and electrical properties. [30][31][32][33][34][35][36][37][38][39][40][41][42] SCD MEMS resonators combined…”

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confidence: 99%

On‐chip Diamond MEMS Magnetic Sensing through Multifunctionalized Magnetostrictive Thin Film

Zhang

Chen

et al. 2023

Adv Funct Materials

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“…Diamond is considered the ultimate semiconductor for its excellent physical and chemical properties, such as wide band gap (5.45 eV), high electron mobility (4500 cm 2 ·V –1 ·s –1 ), high breakdown field (10 9 V·m –1 ), and high thermal conductivity (2000 W·m –1 ·K –1 ), making it an ideal material for high-frequency, high-voltage, and high-power electronic devices. , At present, there are mainly two methods for diamond crystal synthesis, that is, high-pressure high-temperature (HPHT) method and chemical vapor deposition (CVD). Similar to the natural diamond growth environment, the HPHT method is to create the HPHT (∼5 GPa, 1500 °C) growth conditions using a cubic high-pressure apparatus, whose growth chamber is very narrow for the acquisition of high pressure.…”

Section: Introductionmentioning

confidence: 99%

Multiparameter Investigation of Diamond Plates with Optical Time-Stretch Quantitative Phase Imaging

Weng

et al. 2022

Crystal Growth & Design

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Diamond is considered the ultimate semiconductor for its excellent physical and chemical properties, while the defects formed during the growth significantly limit the performance of diamond devices. Online monitoring and fixing is an effective method to minimize the defect density in diamond crystals. The existing methods fail to effectively investigate diamond crystals during growth due to the low frame rate or the limited variety of parameters. Here, we employ optical time-stretch quantitative phase imaging (OTS-QPI) to investigate the multiple parameters of diamond crystals synthesized in different situations. Specifically, we measure the morphological features, surface fluctuations, and refractive index distributions of diamond plates grown via chemical vapor deposition in different growth modes or via high-pressure high-temperature in doping with various concentrations of boron, respectively. The results indicate that the morphological features, surface fluctuations, and refractive index distributions acquired with OTS-QPI show an accuracy that agrees well with those captured by commercial devices, including a microscope, an optical profiler, and an ellipsometer. This work indicates that OTS-QPI can perform online measurements of multiple parameters of diamond crystals at a high speed and high accuracy, which can potentially be employed to increase the quality and yield rate of diamond devices.

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“…As the bias-enhanced nucleation (BEN) method was first used to enhance the nucleation of diamond on Ir substrates, [6] heteroepitaxy has represented an unrivalled technique for the fabrication of large single-crystal diamonds and is as important as homoepitaxy, which combines cloning with the overgrowth of tilted substrates. [7,8] The largest freestanding single-crystal diamond wafer with the diameter of ∅92 mm was fabricated using a specially designed setup combining microwave activation with direct current plasma discharge. [9] Nevertheless, the efficient utilization of the heteroepitaxial method to synthesize large single-crystal diamond is challenging for most research groups, despite the number of teams engaged in this area study.…”

Section: Introductionmentioning

confidence: 99%

Analysis of Surface Microstructures Formed on Ir Substrate under Different Bias Conditions by Microwave Plasma Chemical Vapor Deposition

Wang

Yang

Shu

et al. 2022

Physica Status Solidi (a)

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To understand the process window of bias‐enhanced nucleation of diamond, it is important to study surface modifications of Ir substrates that occur under different conditions. Herein, various microstructures formed on Ir substrates are reported. The first microstructure contains rectangular particles with a size of several hundred nanometers obtained at a relatively high pressure of 12.5 kPa and a high temperature of 880 °C; these particles consist of epitaxially grown Ir3Si species. The second microstructure includes particles oriented along the [110] direction; these particles, however, consist of etched Ir pillars with a height of 400 nm when the substrate temperature increases to 1110 °C. Both microstructures form because of Ir sputtering due to the bombardment of energetic charged ions and the transport of Ir surface atoms. This study demonstrates two types of surface modifications under different bias‐enhanced nucleation conditions and provides a method for preparing an epitaxial Ir–Si compound that can be applied in various silicon‐based electronic devices.

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Coessential-connection by microwave plasma chemical vapor deposition: a common process towards wafer scale single crystal diamond

Cited by 20 publications

References 96 publications

On‐chip Diamond MEMS Magnetic Sensing through Multifunctionalized Magnetostrictive Thin Film

On‐chip Diamond MEMS Magnetic Sensing through Multifunctionalized Magnetostrictive Thin Film

Multiparameter Investigation of Diamond Plates with Optical Time-Stretch Quantitative Phase Imaging

Analysis of Surface Microstructures Formed on Ir Substrate under Different Bias Conditions by Microwave Plasma Chemical Vapor Deposition

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