Coexistence of Write Once Read Many Memory and Memristor in blend of Poly(3,4-ethylenedioxythiophene): polystyrene sulfonate and Polyvinyl Alcohol

Nguyen, Viet Cuong; Lee, Pooi See

doi:10.1038/srep38816

Cited by 20 publications

(5 citation statements)

References 28 publications

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“…In this case, the graphene-doped PVA composite memristor resembles the trap-induced resistive switching modeling mechanism that has been widely discussed. The charge injected from the contacts is captured by the conductive dopant in a manner similar to the doping of PCBM or PEDOT:PSS in a PI or PVA matrix. , As shown in this work, significantly reproducible bipolar resistive switching behavior is observed when graphene is doped into a PVA matrix. This result implies that graphene, which has more edges or defects, acts as a carrier trapping site in the PVA–Gr composite film.…”

Section: Resultsmentioning

confidence: 99%

Transmission Mechanism and Logical Operation of Graphene-Doped Poly(vinyl alcohol) Composite-Based Memristor

Diao,

Yang,

Jia

et al. 2024

ACS Appl. Mater. Interfaces

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Memristors are considered the best candidates for nonvolatile memory and advanced computing technologies, and polymer and two-dimensional (2D) materials have been developed as functional layer materials in memristors with high-performance resistive switching characteristics. In this work, a polymer memristor with a graphene (Gr)-doped poly(vinyl alcohol) (PVA) composite acting as the functional layer was prepared. The memristor device exhibited superior performance with good retention and a comparatively large ON/OFF ratio at room temperature. Additionally, excellent logic operations were achieved. These satisfactory properties can be attributed to trap-induced carrier trapping and detrapping. In addition, the device exhibited stable bipolar resistive switching behavior over a moderate temperature range. This work provides insight into the transmission mechanism of polymer-based memristors and the reasons why they become unstable at high temperatures, demonstrating the potential applications of PVA−Gr-based polymer memristors as logic circuit units in integrated chips and artificial intelligence.

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Section: Resultsmentioning

confidence: 99%

Transmission Mechanism and Logical Operation of Graphene-Doped Poly(vinyl alcohol) Composite-Based Memristor

Diao,

Yang,

Jia

et al. 2024

ACS Appl. Mater. Interfaces

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“…Recently, organic resistive switching memory devices (organic RRAM) have been studied extensively for future flexible and stretchable electronics [7]. In this class of materials, the switching mechanisms are attributed to metal migration from active electrodes [8,9], defect migration [10], charge transfers [11], charge trapping/de-trapping [12,13] and electrochemical/electro-active processes [14]. Many materials have shown WORM switching such as Organic-Inorganic perovskites [15], Graphene composites [16], Biomaterials [17], Quantum dots and composites [18].…”

Section: Introductionmentioning

confidence: 99%

Solution-processed PEDOT: PSS/PVA polymer blend write-once-read-many memory devices

Nguyen

2024

E3S Web Conf.

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In this work, all-solution-processed resistive switching memory devices in a polymer blend are realised. The memory, in this work, is Write-Once-Read-Many memory (WORM). The polymer blend is the blend of Poly(3,4-ethylenedioxythiophene) Polystyrene Sulfonate (PEDOT: PSS) and Polyvinyl Alcohol (PVA). The devices can sustain 50 bending cycles at a bending radius of 0.5mm, while still able to maintain and perform memory functions. The mechanism of the switching can be attributed to electrochemical properties of the polymers. The migrations of polymers (PEDOT: PSS/PVA blend) and electrolysis of the absorbed water distort the conducting pathways and switch the state of the device from a low resistance state (LRS) to a high resistance state (HRS). The work may pave the way for future low cost flexible electronic memory devices. Flexible memory devices

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“…These inorganic-semiconductor-based RRAMs exhibited remarkable memory characteristics with certain drawbacks due to the limitations of functional material including nonflexibility, nonrecyclability, and environmental unfriendliness. 128 Organic-semiconductor-based RRAMs have also been proposed to cope with the disadvantages of inorganic RRAMs such as poly(vinyl alcohol) (PVA), 49 poly(methyl methacrylate) (PMMA), 129 methylammonium lead iodide (CH 3 NH 3 PbI 3 ), 130 poly(3-hexylthiophene) (P3HT), 50 poly- (3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PE-DOT:PSS), 131 naphthalimide nanoparticles, 132 and so on, but they too have certain limitations such as a low conductivity and small lifetime. 133 Different classes of materials used as the functional layers of RRAMs are illustrated in Figure 1(a).…”

Section: Introductionmentioning

confidence: 99%

Biomaterial-Based Nonvolatile Resistive Memory Devices toward Ecofriendliness and Biocompatibility

Rehman

Kim

et al. 2021

ACS Appl. Electron. Mater.

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Advancement in electronic industry has revolutionized the lifestyle of mankind at the cost of leaving adverse effects on the environment due to the use of toxic and nondegradable functional materials abundantly used in various electronic devices. The use of biomaterials in electronic devices with attractive properties is by far the best solution for protecting our environment from hazardous materials without compromising the growth of the electronic industry. Biomaterials are environmentally friendly and biocompatible with the added advantages of easy processing, transparency, flexibility, abundant resources, sustainability, recyclability, and simple extraction. This Review targets the characteristics, advancements, role, limitations, and prospects of using biomaterials as the functional layer of a resistive random-access memory (RRAM) device with a primary focus on the electronic properties of bio-RRAMs. Among the available memory devices, RRAMs have a huge potential to become the nonvolatile memory of the next generation owing to their simple structure, high scalability, and low power consumption. Applications of using biomaterial-based RRAMs have also been discussed including mimicking the human brain, fabricating wearable memory devices, and implanting bio-RRAMs. The motivation behind this work is to promote the use of biomaterials in electronic devices and attract researchers toward a green solution of hazardous problems associated with the electronic industry.

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Coexistence of Write Once Read Many Memory and Memristor in blend of Poly(3,4-ethylenedioxythiophene): polystyrene sulfonate and Polyvinyl Alcohol

Cited by 20 publications

References 28 publications

Transmission Mechanism and Logical Operation of Graphene-Doped Poly(vinyl alcohol) Composite-Based Memristor

Transmission Mechanism and Logical Operation of Graphene-Doped Poly(vinyl alcohol) Composite-Based Memristor

Solution-processed PEDOT: PSS/PVA polymer blend write-once-read-many memory devices

Biomaterial-Based Nonvolatile Resistive Memory Devices toward Ecofriendliness and Biocompatibility

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