Cofabrication of Vacuum Field Emission Transistor (VFET) and MOSFET

Han, Jin−Woo; Oh, Jae Sub; Meyyappan, M.

doi:10.1109/tnano.2014.2310774

Cited by 78 publications

(48 citation statements)

References 13 publications

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“…However, only after the successful demonstration of MOSFET analogous nanoscale vacuum‐channel transistor operating in air by Han et al, it received significant attention. Figure highlights the details of experimental and theoretical demonstrations of field emission at atmospheric temperature and pressure till date . Furthermore, Table highlights the comparison of performance parameters for both field emission and transistor parameters (where applicable).…”

Section: From Vacuum To Air Medium For Electron Field Emissionmentioning

confidence: 99%

Electron Emission Devices for Energy‐Efficient Systems

Nirantar

Ahmed

Bhaskaran

et al. 2019

Advanced Intelligent Systems

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Artificial intelligence platforms, high-speed computation, and data handling systems increasingly need energy-efficient systems. Electron emission was fundamental to the development of transistors and electronics over seven decades ago. This technology has a renewed emergence and includes implications in diverse fields ranging from electronics, telecommunication, defense, space exploration, medical science, and material science to televisions and displays. For such a vital field, a critical review of theories, current research directions, applications, and future prospects is invaluable. Herein, the ongoing research directions adopted to enhance the emitter performance are reviewed and the relative degree of their success is compared. This is supported by an overview of key electron emission, transport mechanisms, and ways to tune a particular mechanism for energy-efficient applications. The diverse range of applications in this field, with a particular focus on electronics, is outlined. Exciting current developments in electron field emission that could revolutionize the electronic industry with a resurgence of nanoscale field emission transistor in the air medium are also discussed. Figure 2. Representation of different electron emission mechanisms: a) Comparison of thermionic emission, Schottky emission, FN tunnelling, and direct tunnelling with schematic energy band diagram. b) Typical thermionic emission plot. c) Typical Schottky plot. (b,c)Reproduced with permission. [3]

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Section: From Vacuum To Air Medium For Electron Field Emissionmentioning

confidence: 99%

Electron Emission Devices for Energy‐Efficient Systems

Nirantar

Ahmed

Bhaskaran

et al. 2019

Advanced Intelligent Systems

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“…Research on vacuum electronics has largely focused on microfabrication efforts, 22 although nanoscale fabrication has been attempted recently. [23][24][25] In addition to radiation immunity, the absence of scattering makes vacuum transport faster than that in semiconductors. Efforts to combine the best of vacuum transport and silicon technology have yielded nanoscale vacuum devices with electrode gaps of 50-150 nm.…”

Section: Introductionmentioning

confidence: 99%

Nanoelectronics and nanosensors for space exploration

2015

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“…As shown in Figure 3 , our fabricated GVTs can work at low voltages of less than 10 V, comparable to those of graphene-based solid-state devices. [ 3,4,[10][11][12] Recently, two fi eld emission vacuum transistors in novel designs, vacuum channel MOS FETs and gate insulated vacuum channel transistors, [19][20][21] were reported to exhibit low working voltages of less than 10 V. However, their switching performances are still unsatisfactory. Vacuum channel MOS FETs exhibited an ON/OFF current ratio of only 500.…”

Section: Resultsmentioning

confidence: 99%

“…[13][14][15][16][17][18] Recently, a couple of vacuum transistors working at the voltages comparable to those of solid-state transistors have been achieved. [19][20][21] However, the performances of these vacuum devices are still overshadowed compared to those of solid-state ones, especially for their low ON/OFF current ratio and slow transition between ON and OFF states.…”

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confidence: 99%

A Graphene‐Based Vacuum Transistor with a High ON/OFF Current Ratio

Wei

Zhang

et al. 2015

Adv Funct Materials

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A graphene-based vacuum transistor (GVT) with a high ON/OFF current ratio is proposed and experimentally realized by employing electrically biased graphene as the electron emitter. The states of a GVT are switched by tuning the bias voltage applied to the graphene emitter with an ON/OFF current ratio up to 10 6 , a subthreshold slope of 120 mV dec −1 and low working voltages of <10 V, exhibiting switching performances superior to those of previously reported graphene-based solid-state transistors. GVTs are fabricated and integrated using silicon microfabrication technology. A perfectly symmetric ambipolar device is achieved by integrating two GVTs, implying the potential of realizing vacuum integrated circuits based on GVTs. GVTs are expected to fi nd applications in extreme environments such as high temperature and intense irradiation.

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Cofabrication of Vacuum Field Emission Transistor (VFET) and MOSFET

Cited by 78 publications

References 13 publications

Electron Emission Devices for Energy‐Efficient Systems

Electron Emission Devices for Energy‐Efficient Systems

Nanoelectronics and nanosensors for space exploration

A Graphene‐Based Vacuum Transistor with a High ON/OFF Current Ratio

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