Coherent acoustic control of a single silicon vacancy spin in diamond

Maity, Smarak; Shao, Linbo; Bogdanovic, Stefan; Meesala, Srujan; Sohn, Young-Ik; Sinclair, Neil; Pingault, Benjamin; Chalupnik, Michelle; Chia, Cleaven; Zheng, Lu; Lai, Keji; Lončar, Marko

doi:10.1038/s41467-019-13822-x

Cited by 134 publications

(116 citation statements)

References 35 publications

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“…We then proceed to characterize the V Si under Stark modulation, in order to observe spectra of Floquet eigenstates which have been previously seen in other solid state quantum emitters such as the NV and SiV centers in diamond 31,47 , the divacancy in SiC 30 , and quantum dots 28 . Applying sinusoidal modulation Δ(t) for a range of frequencies and amplitudes, we observe that the V Si spectrum matches the prediction of the scattering matrix theory (Fig.…”

Section: Continuous-wave Scattering Off a Modulated Two-level Systemmentioning

confidence: 99%

Spectrally reconfigurable quantum emitters enabled by optimized fast modulation

et al. 2020

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The ability to shape photon emission facilitates strong photon-mediated interactions between disparate physical systems, thereby enabling applications in quantum information processing, simulation and communication. Spectral control in solid state platforms such as color centers, rare earth ions, and quantum dots is particularly attractive for realizing such applications on-chip. Here we propose the use of frequency-modulated optical transitions for spectral engineering of single photon emission. Using a scattering-matrix formalism, we find that a two-level system, when modulated faster than its optical lifetime, can be treated as a single-photon source with a widely reconfigurable photon spectrum that is amenable to standard numerical optimization techniques. To enable the experimental demonstration of this spectral control scheme, we investigate the Stark tuning properties of the silicon vacancy in silicon carbide, a color center with promise for optical quantum information processing technologies. We find that the silicon vacancy possesses excellent spectral stability and tuning characteristics, allowing us to probe its fast modulation regime, observe the theoretically-predicted two-photon correlations, and demonstrate spectral engineering. Our results suggest that frequency modulation is a powerful technique for the generation of new light states with unprecedented control over the spectral and temporal properties of single photons.

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Section: Continuous-wave Scattering Off a Modulated Two-level Systemmentioning

confidence: 99%

Spectrally reconfigurable quantum emitters enabled by optimized fast modulation

et al. 2020

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“…On the other hand, the surface acoustic waves (SAWs) which involve phonon‐like excitations bound to the surface of a solid, are now widely used to realize the mechanical driving spin transitions. Specifically, the SAWs driving electron spin transitions of NV centers, [ 32 ] divacancy centers in silicon carbide, [ 33 ] and SiV centers [ 26 ] have already been experimentally demonstrated. To extend the scope of our scheme, the spin–phonon couplings in this situation for squeezing applications are briefly discussed in Appendix A.…”

Section: The Setupmentioning

confidence: 99%

“…Let us consider the experimental feasibility of our scheme and the appropriate parameters to achieve strong couplings. In view of the recent progress in the fabrication of high‐quality diamond structures [ 58–60 ] and demonstrations of strain‐induced control of defects, [ 25–27,30–33 ] the proposed scheme could realistically be implemented with current experimental techniques. For the diamond waveguides, the material properties are

E = 1050

GPa,

ν = 0.2

, and

ρ = 3500

kg m −3 .…”

Section: Experimental Feasibilitymentioning

confidence: 99%

“…More importantly, the very recent research shows that the strong strain couplings between the individual SiV center spins and the propagating phonon modes can be achieved. [ 25,26 ] This may set a base for manipulating the quantum states of SiV centers via the spin–phonon couplings.…”

Section: Introductionmentioning

confidence: 99%

“…[ 27–29 ] Generally speaking, the static strain will generate energy shifts in the ground states, and the resonant a.c. strain field can coherently drive electron spin transitions. Thus far, the strong mechanical driving spin transitions with NV centers, [ 30–32 ] neutral divacancy centers in silicon carbide, [ 33 ] and SiV centers [ 26 ] have been experimentally demonstrated. As the sublevels of the ground state in NV centers or divacancy centers are defined within the same orbital, the strain susceptibilities are very weak (≈10 9 Hz per strain).…”

Section: Introductionmentioning

confidence: 99%

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Preparing Squeezed Spin States in a Spin–Mechanical Hybrid System with Silicon‐Vacancy Centers

et al. 2020

Adv Quantum Tech

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We present and analyze an effective scheme for preparing squeezed spin states in a novel spinmechanical hybrid device, which is realized by a single crystal diamond waveguide with built-in silicon-vacancy (SiV) centers. After studying the strain couplings between the SiV spins and the propagating phonon modes, we show that long-range spin-spin interactions can be achieved under large detuning condition. We model these nonlinear spin-spin couplings with an effective one-axis twisting Hamiltonian, and find that the system can be steered to the squeezed spin states in the practical situations. This work may have interesting applications in high-precision metrology and quantum information. *

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Silicon‐Lattice‐Matched Boron‐Doped Gallium Phosphide: A Scalable Acousto‐Optic Platform

Yama,

Chen,

Chakravarthi

et al. 2023

Advanced Materials

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The compact size, scalability, and strongly confined fields in integrated photonic devices enable new functionalities in photonic networking and information processing, both classical and quantum. Gallium phosphide (GaP) is a promising material for active integrated photonics due to its high refractive index, wide band gap, strong nonlinear properties, and large acousto‐optic figure of merit. In this work we demonstrate that silicon‐lattice‐matched boron‐doped GaP (BGaP), grown at the 12‐inch wafer scale, provides similar functionalities as GaP. BGaP optical resonators exhibit intrinsic quality factors exceeding 25,000 and 200,000 at visible and telecom wavelengths respectively. We further demonstrate the electromechanical generation of low‐loss acoustic waves and an integrated acousto‐optic (AO) modulator. High‐resolution spatial and compositional mapping, combined with ab initio calculations indicate two candidates for the excess optical loss in the visible band: the silicon‐GaP interface and boron dimers. These results demonstrate the promise of the BGaP material platform for the development of scalable AO technologies at telecom and provide potential pathways toward higher performance at shorter wavelengths.This article is protected by copyright. All rights reserved

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Coherent acoustic control of a single silicon vacancy spin in diamond

Cited by 134 publications

References 35 publications

Spectrally reconfigurable quantum emitters enabled by optimized fast modulation

Spectrally reconfigurable quantum emitters enabled by optimized fast modulation

Preparing Squeezed Spin States in a Spin–Mechanical Hybrid System with Silicon‐Vacancy Centers

Silicon‐Lattice‐Matched Boron‐Doped Gallium Phosphide: A Scalable Acousto‐Optic Platform

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