“…Of the semiconducting NWs, the III-V group of semiconductors are promising and of these indium antimonide ( ) is particularly interesting because it has the smallest direct energy band gap (0.17 eV at room temperature) [ 2 ], and very high electron mobility (77,000 cm V s ) [ 3 ]; making it an ideal material for use as field effective transistors and long-wavelength detectors [ 4 , 5 ]. Crystalline ( c - ) NWs have been synthesized by various techniques such as pulsed electrodeposition technique [ 2 ], pulsed-laser chemical vapor deposition [ 6 ], molecular beam epitaxy [ 7 , 8 ], metal organic vapor phase epitaxy [ 9 ], and chemical vapor deposition [ 10 , 11 ]. In most cases, growth of c - NWs follows the metal-catalyst assisted vapor-liquid-solid (VLS) growth mechanism [ 1 ], and NW growth continues as long as and vapors are supplied to the molten alloy droplet.…”