Coherent growth of superconducting TiN thin films by plasma enhanced molecular beam epitaxy

Krockenberger, Yoshiharu; Karimoto, Shin–ichi; Yamamoto, Hideki; Semba, Kouichi

doi:10.1063/1.4759019

Cited by 42 publications

(31 citation statements)

References 37 publications

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“…Next to the MgO peaks (on the left hand side), the respective strong TiN peaks at 42.6 • (200) and 92.7 • (400) are visible, indicating epitaxial growth. Such an epitaxy is expected and has been observed before [43,44,37,54], as both MgO and TiN have a cubic rocksalt structure, and the bulk lattice mismatch is only ∼ 0.6% [38,44]. The full range of 2Θ is shown in Fig.…”

Section: Surface Topography and Crystal Structuresupporting

confidence: 62%

High quality superconducting titanium nitride thin film growth using infrared pulsed laser deposition

Torgovkin¹,

Chaudhuri²,

Ruhtinas³

et al. 2018

Supercond. Sci. Technol.

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Superconducting titanium nitride (TiN) thin films were deposited on magnesium oxide, sapphire and silicon nitride substrates at 700 • C, using a pulsed laser deposition (PLD) technique, where infrared (1064 nm) pulses from a solid-state laser were used for the ablation from titanium target in a nitrogen atmosphere. Structural studies performed with X-ray diffraction showed the best epitaxial crystallinity for films deposited on MgO. In the best films, superconducting transition temperatures, T C , as high as 4.8 K were observed, higher than in most previous superconducting TiN thin films deposited with reactive sputtering. A room temperature resistivity down to ∼ 17µΩcm and residual resistivity ratio (RRR) up to 3 were observed in the best films, approaching reported single crystal film values, demonstrating that PLD is a good alternative to reactive sputtering for superconducting TiN film deposition. For less than ideal samples, the suppression of the film properties were correlated mostly with the unintended incorporation of oxygen (5-10 at. %) in the film, and for high oxygen content films, vacuum annealing was also shown to increase the T C. On the other hand, superconducting properties were surprisingly insensitive to the nitrogen content, with high quality films achieved even in the highly nitrogen-rich, Ti:N = 40/60 limit. Measures to limit oxygen exposure during deposition must be taken to guarantee the best superconducting film properties, a fact that needs to be taken into account with other deposition methods, as well.

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Section: Surface Topography and Crystal Structuresupporting

confidence: 62%

High quality superconducting titanium nitride thin film growth using infrared pulsed laser deposition

Torgovkin¹,

Chaudhuri²,

Ruhtinas³

et al. 2018

Supercond. Sci. Technol.

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“…Therefore, it is shown that the superconducting properties of TiN films depend on the lattice constant. The observed value of a 0 with the maximum T C is close to the reported value for TiN films deposited by molecular beam epitaxy (MBE) [8]. The ρ 10 is proportional to the a 0 , except for the case of the TiN film deposited at 1073 K. The decrease in ρ 10 with decreasing nitrogen partial pressure is expected from the decrease in the number of defects due to interstitial nitrogen atoms.…”

Section: A Crystal Structure and Transport Properties Of Tin Thin Filmssupporting

confidence: 82%

Fabrication and Characterization of Epitaxial TiN-Based Josephson Junctions for Superconducting Circuit Applications

Makise

Sun

Terai

et al. 2015

IEEE Trans. Appl. Supercond.

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We investigated full-epitaxial TiN/AlN/TiN Josephson junctions on MgO substrates for superconducting qubit applications. The critical temperature (T C ) of TiN film is relatively low at around 5 K, but its lattice constant is about 0.424 nm, which is close to the lattice constant of MgO of 0.421 nm. TiN and AIN films were prepared by DC magnetron sputtering in a load-lock sputtering system with an ultra-high vacuum chamber. The deposition temperature was varied from ambient temperature to 1073 K. In XRD analysis, (200) peaks were observed in both the TiN single layer film and the TiN/AIN/TiN trilayer film. No other XRD peaks were observed in the single layer or trilayer films. The lattice constant of TiN was determined to be 0.4242 nm from XRD analysis, close to the value of 0.4212 nm for MgO. The 150 nm-thick single-layer TiN film on the MgO substrate showed a T C of 5.3 K and a resistivity of 3.5 μΩcm at 10 K. Based on these epitaxial TiN films, we fabricated TiN/AIN/TiN Josephson junctions and measured their current-voltage characteristics. At 1.9 K, the electrical parameters of junctions with J C = 50 A/cm 2 showed that the gap voltage and the ratio of R sg /R N were about 2.5 mV and 2.1, respectively.

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“…Another advantage is the low electrical resistivity of sputter deposited TiN (16 µΩ cm) and a surface roughness below 1 nm. 8,9 The lattice constant of TiN (fcc structure) is 4.24Å and therefore suitable for various Heusler compounds. By rotating the unit cell of the Co-based Heusler compounds by 45 degree a lattice mismatch of about 5 % is achieved.…”

Section: Introductionmentioning

confidence: 99%

Titanium nitride as a seed layer for Heusler compounds

Niesen

Glas

Ludwig

et al. 2015

Journal of Applied Physics

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Titanium nitride (TiN) shows low resistivity at room temperature (27 mu Omega cm), high thermal stability and thus has the potential to serve as seed layer in magnetic tunnel junctions. High quality TiN thin films with regard to the crystallographic and electrical properties were grown and characterized by x-ray diffraction and 4-terminal transport measurements. Element specific x-ray absorption spectroscopy revealed pure TiN inside the thin films. To investigate the influence of a TiN seed layer on a ferro(i)magnetic bottom electrode in magnetic tunnel junctions, an out-of-plane magnetized Mn2.45Ga as well as in- and out-of-plane magnetized Co2FeAl thin films were deposited on a TiN buffer, respectively. The magnetic properties were investigated using a superconducting quantum interference device and anomalous Hall effect for Mn2.45Ga. Magneto optical Kerr effect measurements were carried out to investigate the magnetic properties of Co2FeAl. TiN buffered Mn2.45Ga thin films showed higher coercivity and squareness ratio compared to unbuffered samples. The Heusler compound Co2FeAl showed already good crystallinity when grown at room temperature on a TiN seed-layer. (C) 2015 AIP Publishing LLC

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Coherent growth of superconducting TiN thin films by plasma enhanced molecular beam epitaxy

Cited by 42 publications

References 37 publications

High quality superconducting titanium nitride thin film growth using infrared pulsed laser deposition

High quality superconducting titanium nitride thin film growth using infrared pulsed laser deposition

Fabrication and Characterization of Epitaxial TiN-Based Josephson Junctions for Superconducting Circuit Applications

Titanium nitride as a seed layer for Heusler compounds

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