Titanium nitride as a seed layer for Heusler compounds

Niesen, Alessia; Glas, Manuel; Ludwig, J. T.; Schmalhorst, Jan-Michael; Sahoo, Roshnee; Ebke, Daniel; Arenholz, Elke; Reiss, Guenter

doi:10.1063/1.4938388

Cited by 7 publications

(10 citation statements)

References 18 publications

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“…The large number of oscillations prove the low roughness of the interfaces. This is due to the low roughness below 1 nm of the TiN buffer [14]. The similarity between both data sets also proves that the topology of the interfaces do not vary in the studied temperature range.…”

supporting

confidence: 60%

“…The (002) superlattice and the fundamental (004) peak of Fe 1.5 CoGe can be observed already for the as-deposited state but they experience a strong intensity increase with the thermal treatment. The TiN layer acts as a seed layer and its role in improving growth has been reported also for other alloys [1,14]. Due to the similar lattice constant of TiN and MgO, the TiN film diffraction peaks are close to the substrate reflections and therefore difficult to separate.…”

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confidence: 98%

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Low damping magnetic properties and perpendicular magnetic anisotropy in the Heusler alloy Fe1.5CoGe

et al. 2019

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We present a study of the dynamic magnetic properties of TiN-buffered epitaxial thin films of the Heusler alloy Fe1.5CoGe. Thickness series annealed at different temperatures are prepared and the magnetic damping is measured, a lowest value of α = 2.18 × 10 −3 is obtained. The perpendicular magnetic anisotropy properties in Fe1.5CoGe/MgO are also characterized. The evolution of the interfacial perpendicular anisotropy constant K ⊥ S with the annealing temperature is shown and compared with the widely used CoFeB/MgO interface. A large volume contribution to the perpendicular anisotropy of (4.3 ± 0.5) × 10 5 J/m 3 is also found, in contrast with vanishing bulk contribution in common Co-and Fe-based Heusler alloys.

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confidence: 60%

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confidence: 98%

Low damping magnetic properties and perpendicular magnetic anisotropy in the Heusler alloy Fe1.5CoGe

et al. 2019

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“…Here, it is worth mentioning that Ti L-edge consists of two features (L 3 and L 2 ) which arises due to the transition of core electron from Ti 2p3/2→Ti 3d and Ti 2p1/2→Ti 3d respectively [67]. Although, our obtained Ti L-edge features are not consistent with the literature reports [67,68] and clearly confirms the presence of surface oxidation which was in accordance with our XRR fitting. From Fig.…”

Section: Soft X-ray Absorption Spectroscopysupporting

confidence: 67%

Synthesis and study of highly dense and smooth TiN thin films

Chowdhury¹,

Gupta²,

Prakash³

et al. 2020

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This study aims towards a systematic reciprocity of the tunable synthesis parameters -partial pressure of N 2 gas, ion energy (E i ) and Ti interface in TiN thin film samples deposited using ion beam sputtering at ambient temperature (300 K). At the optimum partial pressure of N 2 gas, samples were prepared with or without Ti interface at E i = 1.0 or 0.5 keV. They were characterized using x-ray reflectivity (XRR) to deduce thickness, roughness and density. The roughness of TiN thin films was found to be below 1 nm, when deposited at the lower E i of 0.5 keV and when interfaced with a layer of Ti. Under these conditions, the density of TiN sample reaches to 5.80(±0.03) g cm −3 , a value highest hitherto for any TiN sample. X-ray diffraction and electrical resistivity measurements were performed. It was found that the cumulative effect of the reduction in E i from 1.0 to 0.5 keV and the addition of Ti interface favors (111) oriented growth leading to dense and smooth TiN films and a substantial reduction in the electrical resistivity. The reduction in E i has been attributed to the surface kinetics mechanism (simulated using SRIM) where the available energy of the sputtered species () leaving the target at E i = 0.5 keV is the optimum value favoring the growth of defects free homogeneously distributed films. The electronic structure of samples was probed using N K-edge absorption spectroscopy and the information about the crystal field and spin-orbit splitting confirmed TiN phase formation. In essence, through this work, we demonstrate the role of and Ti interface in achieving highly dense and smooth TiN thin films with low resistivity without the need of a high temperature or substrate biasing during the thin film deposition process.

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“…The layer stacks for the Co 2 FeAl based MTJs consist of MgO (substrate)/TiN (20)/Co 2 FeAl (10)/MgO (2)/Co 40 Fe 40 B 20 (5)/Ta(3)/Ru (3) 42 (cf. Supplementary Note 1 ).…”

Section: Resultsmentioning

confidence: 99%

“…For a detailed explanation of the MTJ preparation, characterization of the MTJs after dielectric breakdown and details on the finite element method simulations please refer to the Supplementary Information and refs 5 , 31 , 42 .…”

Section: Methodsmentioning

confidence: 99%

Large magneto-Seebeck effect in magnetic tunnel junctions with half-metallic Heusler electrodes

et al. 2017

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Spin caloritronics studies the interplay between charge-, heat- and spin-currents, which are initiated by temperature gradients in magnetic nanostructures. A plethora of new phenomena has been discovered that promises, e.g., to make wasted heat in electronic devices useable or to provide new read-out mechanisms for information. However, only few materials have been studied so far with Seebeck voltages of only some microvolt, which hampers applications. Here, we demonstrate that half-metallic Heusler compounds are hot candidates for enhancing spin-dependent thermoelectric effects. This becomes evident when considering the asymmetry of the spin-split density of electronic states around the Fermi level that determines the spin-dependent thermoelectric transport in magnetic tunnel junctions. We identify Co2FeAl and Co2FeSi Heusler compounds as ideal due to their energy gaps in the minority density of states, and demonstrate devices with substantially larger Seebeck voltages and tunnel magneto-Seebeck effect ratios than the commonly used Co-Fe-B-based junctions.

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Titanium nitride as a seed layer for Heusler compounds

Cited by 7 publications

References 18 publications

Low damping magnetic properties and perpendicular magnetic anisotropy in the Heusler alloy Fe1.5CoGe

Low damping magnetic properties and perpendicular magnetic anisotropy in the Heusler alloy Fe1.5CoGe

Synthesis and study of highly dense and smooth TiN thin films

Large magneto-Seebeck effect in magnetic tunnel junctions with half-metallic Heusler electrodes

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