2019
DOI: 10.1063/1.5104313
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Low damping magnetic properties and perpendicular magnetic anisotropy in the Heusler alloy Fe1.5CoGe

Abstract: We present a study of the dynamic magnetic properties of TiN-buffered epitaxial thin films of the Heusler alloy Fe1.5CoGe. Thickness series annealed at different temperatures are prepared and the magnetic damping is measured, a lowest value of α = 2.18 × 10 −3 is obtained. The perpendicular magnetic anisotropy properties in Fe1.5CoGe/MgO are also characterized. The evolution of the interfacial perpendicular anisotropy constant K ⊥ S with the annealing temperature is shown and compared with the widely used CoFe… Show more

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Cited by 9 publications
(9 citation statements)
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“…It is to be pointed out that T S /T a = 573 K seems to be optimal to produce Co 2 FeGe thin films with improved magnetic properties. This result is in a good agreement with previously published in [ 19 , 23 ].…”
Section: Resultssupporting
confidence: 94%
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“…It is to be pointed out that T S /T a = 573 K seems to be optimal to produce Co 2 FeGe thin films with improved magnetic properties. This result is in a good agreement with previously published in [ 19 , 23 ].…”
Section: Resultssupporting
confidence: 94%
“…Thus, FHA films are considered as attractive candidates for different multifunctional applications. It was shown in [ 5 , 17 , 19 , 22 , 23 ] that substrate temperature (T S ) and post-deposition annealing (T a ) are powerful tools to control the properties of FHA films. However, so far there is no universal law for thermal treatment conditions.…”
Section: Introductionmentioning
confidence: 99%
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“…The enhancement of M eff is observed for all LSMO thicknesses, confirming the universal role of SIO in enhancing the M eff of LSMO. The effective magnetization can be written as μ 0 M eff = μ 0 M s − H k,eff , [ 46 ] where H k,eff is the effective anisotropy field. This enhancement in M eff in the epitaxial LSMO/SIO is quite different from the SIO/CoFe systems, see Figure 2c, which exhibits M eff < M s , and no strong dependence on SIO thickness, as typically seen in conventional metallic systems.…”
Section: Resultsmentioning
confidence: 99%
“…This could be due to a difference in the sign of H k,eff between the epitaxial LSMO/SIO and non‐epitaxial SIO/Py, which further accentuates the peculiarity of the LSMO/SIO system. In conventional systems, H k,eff can have contributions from a bulk component (2 K u / M s ) and an interface component (2 K int / M s t LSMO ), [ 46 ] where K u and K int are the bulk and interfacial anisotropy constants, respectively. The difference between M eff and M s in the LSMO/SIO scales linearly with 1/ M s t LSMO , shown in the inset of Figure 2d, as expected from an interfacial contribution.…”
Section: Resultsmentioning
confidence: 99%