1997
DOI: 10.1016/s0039-6028(96)01417-3
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Coherent plasmon—surface phonon oscillations in a GaAs Schottky barrier sample

Abstract: Excitation of a biased GaAs-Au Schottky barrier sample by intense fs laser pulses leads to coherent oscillations that are probed by time-resolved second harmonic generation experiments. The observed oscillations agree very well with the results of MC simulations and appear to be plasma oscillations modified by surface phonons.

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Cited by 4 publications
(2 citation statements)
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“…The size of the signal, which is a consequence of the surface sensitivity of SHG and the localized nature of the electron±phonon interaction, is very encouraging and suggests that this technique could be used to probe electron±pho-non interactions at surfaces and to drive non-thermal surface chemical reactions [50]. In related work, Rasing and co-workers were able to extend their previous study [52] on Schottky barrier plasma oscillations to identify plasma±phonon coupling with both the bulk LO phonon at %37 meV, and a surface phonon at %32 meV [51].…”
Section: Time-resolved Studiesmentioning
confidence: 89%
See 1 more Smart Citation
“…The size of the signal, which is a consequence of the surface sensitivity of SHG and the localized nature of the electron±phonon interaction, is very encouraging and suggests that this technique could be used to probe electron±pho-non interactions at surfaces and to drive non-thermal surface chemical reactions [50]. In related work, Rasing and co-workers were able to extend their previous study [52] on Schottky barrier plasma oscillations to identify plasma±phonon coupling with both the bulk LO phonon at %37 meV, and a surface phonon at %32 meV [51].…”
Section: Time-resolved Studiesmentioning
confidence: 89%
“…However, studies in the time domain have also been greatly facilitated by this development. For example, direct temporal observation of coherent plasma±phonon oscillations have been reported [50,51]. Tom and co-workers, in a beautiful experiment, identified six such coupled surface modes at the clean GaAs(110) surface, allowing surface phonon energies at the surface " G point to be…”
Section: Time-resolved Studiesmentioning
confidence: 99%