Cohesive and adhesive properties of ultrathin amorphous and crystalline Ge2Sb2Te5 films on polyimide substrates

Schlich, Franziska F.; Wyss, Andreas; Galinski, Henning; Spolenak, Ralph

doi:10.1016/j.actamat.2016.12.060

Cited by 23 publications

(14 citation statements)

References 40 publications

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“…The microstructure [25,26], thickness [4,27], and interfacial structure [28] of the films were reported to be able to alter the cracking morphologies of single brittle layers.…”

Section: Discussionmentioning

confidence: 99%

“…For example, cracks in a crystalline Ge 2 Sb 2 Te 5 (GST) film deviated from straight paths as they propagated along the grain boundaries, whereas this phenomenon is not observed for cracks propagating in amorphous GST films [26]. A Cr film with columnar grains exhibits a network-type cracking with cracks regularly deviating from the direction perpendicular to the applied strain, whereas the cracks in a Cr film with equiaxed grains are straight [25].…”

Section: Discussionmentioning

confidence: 99%

See 1 more Smart Citation

Discontinuous cracking of TiN films on a steel substrate induced by an adhesive interlayer

Guo

Pang

et al. 2019

Philosophical Magazine Letters

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The basic mechanisms governing the process of cracking of single-layer brittle films have been extensively explored through both simulations and experiments.However, the role that an adhesive interlayer plays in the cracking of the overlying brittle film remains unclear. By performing three-point bending experiments, we observed that the insertion of a 100 nm thick Ti interlayer changed the cracking behavior of TiN films from a continuous pattern to a discontinuous pattern. The slight change in the microstructure of the film and the increase in film thickness arising from the addition of the Ti interlayer are unlikely to cause the observed cracking morphology.

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“…The microstructure [25,26], thickness [4,27], and interfacial structure [28] of the films were reported to be able to alter the cracking morphologies of single brittle layers.…”

Section: Discussionmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

Discontinuous cracking of TiN films on a steel substrate induced by an adhesive interlayer

Guo

Pang

et al. 2019

Philosophical Magazine Letters

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“…The surface was cleaned by 1 min of ultraviolet (UV) ozone treatment and subsequently a 20-nm-thick Al

_{2}

_{3}

gate dielectric was deposited by thermal atomic-layer deposition at 150 °C. The amorphous GST p-type semiconductor layer was direct-current (dc) magnetron sputtered from a Ge

_{2}

_{2}

_{5}

target at room temperature (see reference [31]) and structured by lift-off. To avoid damage to the Al

_{2}

_{3}

, this lift-off was executed using Poly(methyl methacrylate) (PMMA) photoresist and deep-ultraviolet lithography.…”

Section: Methodsmentioning

confidence: 99%

Ge2Sb2Te5 p-Type Thin-Film Transistors on Flexible Plastic Foil

et al. 2018

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In this work, we show the performance improvement of p-type thin-film transistors (TFTs) with Ge2Sb2Te5 (GST) semiconductor layers on flexible polyimide substrates, achieved by downscaling of the GST thickness. Prior works on GST TFTs have typically shown poor current modulation capabilities with ON/OFF ratios ≤20 and non-saturating output characteristics. By reducing the GST thickness to 5 nm, we achieve ON/OFF ratios up to ≈300 and a channel pinch-off leading to drain current saturation. We compare the GST TFTs in their amorphous (as deposited) state and in their crystalline (annealed at 200 °C) state. The highest effective field-effect mobility of 6.7 cm2/Vs is achieved for 10-nm-thick crystalline GST TFTs, which have an ON/OFF ratio of ≈16. The highest effective field-effect mobility in amorphous GST TFTs is 0.04 cm2/Vs, which is obtained in devices with a GST thickness of 5 nm. The devices remain fully operational upon bending to a radius of 6 mm. Furthermore, we find that the TFTs with amorphous channels are more sensitive to bias stress than the ones with crystallized channels. These results show that GST semiconductors are compatible with flexible electronics technology, where high-performance p-type TFTs are strongly needed for the realization of hybrid complementary metal-oxide-semiconductor (CMOS) technology in conjunction with popular n-type oxide semiconductor materials.

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“…Prominent optical phase change materials (PCM)s are vanadium dioxide17,18 and chalcogenide compounds, such as AgInSbTe19 and GeSbTe (GST),20 but also metastable composites, such as TiAlN are used 21. These materials have been successfully applied as active strong interference coatings,21–23 active metasurfaces,24–27 and metalenses 28,29…”

Section: Introductionmentioning

confidence: 99%

Functional Coatings on High‐Performance Polymer Fibers for Smart Sensing

Galinski

Leutenegger

Amberg

et al. 2020

Adv Funct Materials

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Above a critical temperature, high‐performance fibers may lose their mechanical properties resulting in catastrophic events of damage when, e.g., used as load‐carrying ropes. Here, a method to functionalize polymer fibers with thermochromic optical coatings that enable signaling of damaging thermal history is introduced. These smart coatings are comprised of an index‐tunable anti‐reflection coating based on chalcogenide phase change materials (PCM). It is demonstrated that the insulator−metal phase transition of these materials can be aligned with the critical deterioration temperature of both polyethylene terephthalate (PET) monofilaments and liquid‐crystal polyester (LCP) yarns by composition tuning. The carefully designed optical system amplifies the change in optical properties of its constituents upon phase change. The thermal and mechanical degradation of these fibers can thus be monitored and displayed by eye.

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Cohesive and adhesive properties of ultrathin amorphous and crystalline Ge2Sb2Te5 films on polyimide substrates

Cited by 23 publications

References 40 publications

Discontinuous cracking of TiN films on a steel substrate induced by an adhesive interlayer

Discontinuous cracking of TiN films on a steel substrate induced by an adhesive interlayer

Ge2Sb2Te5 p-Type Thin-Film Transistors on Flexible Plastic Foil

Functional Coatings on High‐Performance Polymer Fibers for Smart Sensing

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