Coil Design for Integration with GaN Hall-Effect Sensors

Marsic, Vlad; Faramehr, Soroush; Igić, Petar

doi:10.1109/wipdaeurope55971.2022.9936109

Cited by 2 publications

(3 citation statements)

References 23 publications

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“…Through experimental testing, this study extends the simulation work described in [39], Fig. 1, to determine the minimum magnetic field density (B) value required by a generic Hall sensor for current monitoring in the noisy EM RF presence of a GaN transistor.…”

Section: Introductionmentioning

confidence: 81%

“…Although the initial study focused on evidencing the minimum B detectable via an external Hall sensor in close proximity to a functioning GaN transistor as an extension to [46][39], monitoring and recording the EM RF emissions at various frequencies and loads yielded a different set of independent findings. Consequently, the methodology section will be divided into two subsections: first, the interfacing and calibration setup for the Hall sensor will be discussed, and second, the EM RF emissions monitoring will be approached.…”

Section: Methodsmentioning

confidence: 99%

“…Since the data is delivered in the form of ADC voltage samples that take into account the sensor's position towards B, a transformation function is required. As it was established in [46], a linear conversion function can be derived from a polynomial line equation rather than from its parametric form which is better suited for vector analysis and modeling like encountered in ray tracing simulations [48] [49]. A first-order polyfit function can be used in MATLAB [50] since the function format is now known.…”

Section: A Hall Sensor Calibration and Preparationsmentioning

confidence: 99%

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GaN Transistors’ Radiated Switching Noise Source Evidenced by Hall Sensor Experiments Toward Integration

Marsic,

Faramehr,

Fleming

et al. 2024

IEEE Access

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Wide bandgap Gallium Nitride (GaN) technology promises to deliver the next generation of power transistors capable of high energy density and compact design integration however, without active monitoring high failing rates are recorded due to its instability to design parameter variations. Moreover, the electromagnetic (EM) radiofrequency (RF) emissions due to GaN power switching require extra design resources. Considering the extensive research area dedicated to galvanic isolated magnetic sensors for GaN wafer monolithic integration with usage in power monitoring, this study investigates the conditions that a Hall sensor is required to meet when operating in close proximity of a GaN transistor. Through considerable experimental testing, it was determined that the sensor requires a magnetic field starting from ±1 mT when interfaced with a microcontroller. Additionally, since the GaN transistor's EM RF switching noise was one of the most monitored parameters during the experiments, it was discovered that it is proportional to the transistor's current transfer area whereas its magnitude is due to electrical current required by the load. As a result of these findings, the EM radiated switching noise may apply to all electrical switches and provide a significant advantage when designing for EM compatibility (EMC).

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Section: Introductionmentioning

confidence: 81%

Section: Methodsmentioning

confidence: 99%

Section: A Hall Sensor Calibration and Preparationsmentioning

confidence: 99%

See 1 more Smart Citation

GaN Transistors’ Radiated Switching Noise Source Evidenced by Hall Sensor Experiments Toward Integration

Marsic,

Faramehr,

Fleming

et al. 2024

IEEE Access

Self Cite

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TCAD Modelling of Magnetic Hall Effect Sensors

Pandey,

Marsic,

Igic

et al. 2024

Inventions

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In this paper, a gallium nitride (GaN) magnetic Hall effect current sensor is simulated in 2D and 3D using the TCAD Sentaurus simulation toolbox. The model takes into account the piezoelectric polarization effect and the Shockley–Read–Hall (SRH) and Fermi–Dirac statistics for all simulations. The galvanic transport model of TCAD Sentaurus is used to model the Lorentz force and magnetic behaviour of the sensor. The current difference, total current, and sensitivity simulations are systematically calibrated against experimental data. The sensor is optimised using varying geometrical and biasing parameters for various ambient temperatures. This unintentionally doped ungated current sensor has enhanced sensitivity to 16.5 %T−1 when reducing the spacing between the drains to 1 μm and increasing the source to drain spacing to 76 μm. It is demonstrated that the sensitivity degrades at 448 K (S = 12 %T−1), 373 K (S = 14.1 %T−1) compared to 300 K (S = 16.5 %T−1). The simulation results demonstrate a high sensitivity of GaN sensors at elevated temperatures, outperforming silicon counterparts.

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Coil Design for Integration with GaN Hall-Effect Sensors

Abstract: This document is the author's post-print version, incorporating any revisions agreed during the peer-review process. Some differences between the published version and this version may remain and you are advised to consult the published version if you wish to cite from it.

Cited by 2 publications

References 23 publications

GaN Transistors’ Radiated Switching Noise Source Evidenced by Hall Sensor Experiments Toward Integration

GaN Transistors’ Radiated Switching Noise Source Evidenced by Hall Sensor Experiments Toward Integration

TCAD Modelling of Magnetic Hall Effect Sensors

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