Collector-substrate modeling of SiGe HBTs up to THz range

Saha, Bishwadeep; Fregonèse, Sébastien; Panda, Soumya Ranjan; Chakravorty, Anjan; Céli, D.; Zimmer, Thomas

doi:10.1109/bcicts45179.2019.8972745

Cited by 5 publications

(4 citation statements)

References 12 publications

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“…9(a) indicate that some physical phenomena are likely not well modeled by the PDK compact model. The discrepancies in C22 and g21 might be associated to an incomplete low-frequency modeling of back-gate and substrate networks as already reported in [21], while the g22 discrepancy could be a high-frequency drain-to-substrate coupling not well modeled as recently shown in [22] for heterogenous bipolar transistors. Further investigation is needed to confirm the origin of these discrepancies.…”

Section: Mosfet Measurements Up To 110 Ghz In High Rf Performance Biasmentioning

confidence: 75%

Probe-Dependent Residual Error Analysis for Accurate On-Wafer MOSFET Measurements up to 110 GHz

Nyssens

Rack

et al. 2023

IEEE J. Electron Devices Soc.

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Advances in CMOS technology have enabled MOSFET with cutoff and maximum oscillation frequencies (ft and fmax) in the 400 GHz range, thus opening the path to CMOSbased applications at millimeter-wave (mm-wave) and sub-THz frequencies. Accurate compact models and therefore on-wafer MOSFET measurements at mm-wave frequencies and beyond become crucial for IC design at such high frequencies. However, accurate on-wafer measurement at these frequencies is a complex task requiring dedicating special care to calibration kit (calkit) design and characterization. This paper presents a complete and detailed parasitic correction procedure approach that demonstrates accurate corrected MOSFET measurements up to 110 GHz. It describes the custom calkit designed to perform 'in-situ' multiline Thru-Reflect-Line (mTRL) calibration. In this work, we compare different methods to evaluate the transmission line standards characteristic impedance and identify the best one by comparing the extracted series resistances of a MOSFET. The best method features frequency variations as low as <5% and <20% in source-drain and gate resistances, respectively, up to 110 GHz. Finally, by applying the most suited correction procedure to measurements of different RF probe technologies and comparing them to compact model simulations, we demonstrated high-accuracy FET measurements up to 110 GHz, thanks to an excellent agreement between the probe data and simulations, even in presence of probe-dependent residual errors.

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Section: Mosfet Measurements Up To 110 Ghz In High Rf Performance Biasmentioning

confidence: 75%

Probe-Dependent Residual Error Analysis for Accurate On-Wafer MOSFET Measurements up to 110 GHz

Nyssens

Rack

et al. 2023

IEEE J. Electron Devices Soc.

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“…Concerning the phase parameter of the reflection, the phase of s 11 is well measured without any strong discontinuity up to 500 GHz, which is less than the case for s 22 . Additionally note that the magnitude of s 22 is also affected by the distributed effect within the substrate [18]. In previous work [18], we have showed that the s 22 parameter is also strongly dependent on accurate values of R Cx and the related collector-substrate network whose parameters have to be extracted very carefully.…”

Section: High Frequency Compact Model Evaluationmentioning

confidence: 91%

“…The RF measurement setup is utilized for both dc and s-parameter characterization following state-of-the-art calibration and de-embedding techniques [15,16]. For a detailed TCAD simulation with appropriate calibration, the device doping and layout information extracted in [18] and presented in Table 1 are used. Following the TEM captured device structure and geometry [19] (Figure 2a), a corresponding device structure has been designed in Sentaurus TCAD [20] (Figure 2b).…”

Section: Measurement Setup Tcad Calibration and Quasi-static Modelingmentioning

confidence: 99%

Sub-THz and THz SiGe HBT Electrical Compact Modeling

et al. 2021

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From the perspectives of characterized data, calibrated TCAD simulations and compact modeling, we present a deeper investigation of the very high frequency behavior of state-of-the-art sub-THz silicon germanium heterojunction bipolar transistors (SiGe HBTs) fabricated with 55-nm BiCMOS process technology from STMicroelectronics. The TCAD simulation platform is appropriately calibrated with the measurements in order to aid the extraction of a few selected high-frequency (HF) parameters of the state-of-the-art compact model HICUM, which are otherwise difficult to extract from traditionally prepared test-structures. Physics-based strategies of extracting the HF parameters are elaborately presented followed by a sensitivity study to see the effects of the variations of HF parameters on certain frequency-dependent characteristics until 500 GHz. Finally, the deployed HICUM model is evaluated against the measured s-parameters of the investigated SiGe HBT until 500 GHz.

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“…Finally, we can conclude that very high frequency measurements are mandatory for precise compact model parameter extraction, but cannot be used without a detailed control of the measurements thanks to the above described advanced modelling method. If the ALIT parameter is an example, other parameters in the HICUM model such as ALQF, which models the vertical NQS effect on the diffusion charge, or the fcrbi parameter, which is required for lateral NQS modelling or substrate related parameters [37], require measurements above 110 GHz. After adjusting all NQS parameters, the HICUM model, on which we have grafted a substrate model [37],gives quite good results, as shown in Fig.…”

Section: Transistor Characterization and Modellingmentioning

confidence: 99%

THz Characterization and Modeling of SiGe HBTs: Review (Invited)

Fregonèse

Deng

Cabbia

et al. 2020

IEEE J. Electron Devices Soc.

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This paper presents a state-of-art review of on-wafer S-parameter characterization of THz silicon transistors for compact modelling purpose. After, a brief review of calibration/de-embedding techniques, the paper focuses on the onwafer calibration techniques and especially on the design and dimensions of lines built on advanced silicon technologies. Other information such as the pad geometry, the ground plane and the floorplan of the devices under test are also compared. The influence of RF probe geometry on the coupling with the substrate and adjacent structures is also considered to evaluate the accuracy of the measurement, especially using EM simulation methodology. Finally, the importance of measuring above 110 GHz is demonstrated for SiGe HBT parameter extraction. The validation of the compact model is confirmed thanks to an EM-spice cosimulation that integrates the whole calibration cum deembedding procedure.

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Collector-substrate modeling of SiGe HBTs up to THz range

Cited by 5 publications

References 12 publications

Probe-Dependent Residual Error Analysis for Accurate On-Wafer MOSFET Measurements up to 110 GHz

Probe-Dependent Residual Error Analysis for Accurate On-Wafer MOSFET Measurements up to 110 GHz

Sub-THz and THz SiGe HBT Electrical Compact Modeling

THz Characterization and Modeling of SiGe HBTs: Review (Invited)

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