Color-tunable emission in coaxial GaInN/GaN multiple quantum shells grown on three-dimensional nanostructures

Lu, Weifang; Ito, Kazuma; Sone, Naoki; Okuda, Renji; Miyamoto, Yoshiya; Iwaya, Motoaki; Tekeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu

doi:10.1016/j.apsusc.2020.148279

Cited by 17 publications

(12 citation statements)

References 39 publications

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Section: Resultsmentioning

confidence: 99%

“…This is because the thin AlGaN intermediate layer on SiN x may be able to reduce the surface energy and suppress the 3D growth of the (In)GaN layer, in addition to suppressing the diffusion of point defects and impurities reported in the literature. [73][74][75][76] Region-(iii): Defects were formed in the coalesced region of the GaN cap layers. Two mechanisms are presumed to be involved in defect formation in the coalesced region.…”

Section: Discussion On the Mechanism Of Defect Formationmentioning

confidence: 99%

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Growth Defects in InGaN‐Based Multiple‐Quantum‐Shell Nanowires with Si‐Doped GaN Cap Layers and Tunnel Junctions

Okuno

Mizutani

Iida

et al. 2022

Physica Status Solidi (b)

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Herein, the growth mechanism and defect structure of GaN‐based nanowire multiple‐quantum‐shells (NW‐MQSs) with cap layers combining tunnel junctions and n‐GaN are investigated in detail. In the NW‐MQS structure, defect structures are formed in three regions: (i) From the c‐plane active layer at the tip of NW because of the low crystal quality of the active layer. (ii) Basal‐plane stacking faults (BSFs) with partial dislocations (PDs) are generated from the m‐planes of the NW‐MQSs; these defects are triggered by the silicon nitride (SiNx) formed on the NW surface. While some defects terminate because of the half loop formed by the PDs along the lateral growth of cap layers, others terminate at the coalesced region of the cap layers grown from adjacent MQSs. (iii) Line defects due to low‐angle grain boundaries and planar defects due to the BSFs in region (ii) are formed in the region wherein cap layers coalesce. The defects reaching the surface of the cap layers predominantly depend on the number of defects generated from the c‐plane active layers in region (i). The growth mode and propagation mechanism of such defects are associated, and a method for realizing optical devices based on the high‐quality NW‐MQS structures is discussed.

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Section: Resultsmentioning

confidence: 99%

Section: Discussion On the Mechanism Of Defect Formationmentioning

confidence: 99%

Growth Defects in InGaN‐Based Multiple‐Quantum‐Shell Nanowires with Si‐Doped GaN Cap Layers and Tunnel Junctions

Okuno

Mizutani

Iida

et al. 2022

Physica Status Solidi (b)

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“…The emission region can be flexibly controlled through post-growth etching of the NW apex region, and the geometry of the NW arrays and height of the n-GaN cores enable increased In incorporation in the MQS for the yellow− red emission region. 20,54 Here, it has primarily been demonstrated that NW structures with high quality of coaxial MQS and p-GaN shells are promising for NW-based micro-LEDs. A detailed characterization of emission efficiencies in the micro-LED is highly required to further gain insight into the carrier dynamics during operation.…”

Section: Methodsmentioning

confidence: 99%

Morphology Control and Crystalline Quality of p-Type GaN Shells Grown on Coaxial GaInN/GaN Multiple Quantum Shell Nanowires

Nakayama

Ito

et al. 2021

ACS Appl. Mater. Interfaces

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The morphology and crystalline quality of p-GaN shells on coaxial GaInN/GaN multiple quantum shell (MQS) nanowires (NWs) were investigated using metal–organic chemical vapor deposition. By varying the trimethylgallium (TMG) flow rate, Mg doping, and growth temperature, it was verified that the TMG supply and growth temperature were the dominant parameters in the control of the p-GaN shape on NWs. Specifically, a sufficiently high TMG supply enabled the formation of a pyramid-shaped NW structure with a uniform p-GaN shell. The ratio of the growth rate between the c- and m-planes on the NWs was calculated to be approximately 0.4545. High-angle annular dark-field scanning transmission electron microscopy characterization confirmed that no clear extended defects were present in the n-GaN core and MQS/p-GaN shells on the sidewall. Regarding the p-GaN shell above the c-plane MQS region, only a few screw dislocations and Frank-type partial dislocations appeared at the interface between the serpentine c-plane MQS and the p-GaN shell near the tips. This suggested that the crystalline quality of the MQS structure can trigger the formation of screw dislocations and Frank-type partial dislocations during the p-GaN growth. The growth mechanism of the p-GaN shell on NWs was also discussed. To inspect the electronic properties, a prototype of a micro light-emitting diode (LED) with a chip size of 50 × 50 μm2 was demonstrated in the NWs with optimal growth. By correlating the light output curve with the electroluminescence spectra, three different emission peaks (450, 470, and 510 nm) were assignable to the emission from the m-, r-, and c-planes, respectively.

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“…Moreover, by controlling the diameter, pitch, and morphology of the nanowires, the amount of In incorporation and light emission intensity can be controlled [16][17][18][19]. Furthermore, since toxic arsenic, phosphorus, and rare-earth elements are not used in GaInN/GaN MQS nanowires, environmentally friendly high-efficiency red LEDs can be realized [20].…”

Section: Introductionmentioning

confidence: 99%

Identification of multi-color emission from coaxial GaInN/GaN multiple-quantum-shell nanowire LEDs

Ito

Katsuro

et al. 2022

Nanoscale Adv.

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Color-tunable emission in coaxial GaInN/GaN multiple quantum shells grown on three-dimensional nanostructures

Cited by 17 publications

References 39 publications

Growth Defects in InGaN‐Based Multiple‐Quantum‐Shell Nanowires with Si‐Doped GaN Cap Layers and Tunnel Junctions

Growth Defects in InGaN‐Based Multiple‐Quantum‐Shell Nanowires with Si‐Doped GaN Cap Layers and Tunnel Junctions

Morphology Control and Crystalline Quality of p-Type GaN Shells Grown on Coaxial GaInN/GaN Multiple Quantum Shell Nanowires

Identification of multi-color emission from coaxial GaInN/GaN multiple-quantum-shell nanowire LEDs

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