Colossal magnetic moment in Cr and Er co-implanted GaN films

Gao, Xingguo; Liu, Chao; Tao, Dong; Zeng, Yiping

doi:10.1016/j.jallcom.2015.05.056

Cited by 4 publications

(1 citation statement)

References 34 publications

(44 reference statements)

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“…The specific nature of the defects that give rise to the appearing of post-implanted peaks was well discussed by Katiskini et al [31] and recently by Pandey et al [30] in various ion-implanted GaN, mainly with oxygen, nitrogen, magnesium, and silicon. Similarly, other studies of ion-implanted GaN with rare-earth metals (Er, Gd) [32,33] or other elements (Be, C) [34,35] were reported discussing different multiphonon behaviour. It is worthwhile to mention that the intensity ratio of E 2 (high) to A 1 (LO) changes, besides their line broadening (FWHM).…”

Section: Structural Examinationmentioning

confidence: 70%

Phosphorus implantation of Mg-doped (Al)GaN heterostructures: structural examination and depth profiling

Piętak

Złotnik

Rozbiegała

et al. 2020

J Mater Sci: Mater Electron

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Phosphorus introduction into Mg-doped aluminium gallium nitride ((Al)GaN) epilayers to enhance the acceptor activation is a possible strategy for a p-type conductivity improvement in III-nitride wide-bandgap semiconductors. To date, P-implanted Mg-doped (Al)GaN structures have not been systematically evaluated, regarding structural verification and elemental distribution. Here, comprehensive studies of P ions impact on structural degradation are presented. Furthermore, a post-implantation annealing conducted at different temperatures is examined as well. The results demonstrated that the structural changes in the examined compounds, namely GaN and Al0.1Ga0.9N, due to P implantation and a subsequent recovery by thermal annealing follow similar trends. Interestingly, it was revealed that P diffusion length is higher in AlGaN than in GaN, possibly due to higher oxygen content in Al-containing compounds, analogous to Mg dopant. Additionally, the initial Mg concentration in (Al)GaN is crucial because too high Mg doping could be the main cause of electrical properties degradation of (Al)GaN heterostructures after P ion implantation.

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