Combination of optical measurement and precipitation theory to overcome the obstacles of detection limits

Kissinger, G.; Müller, Timo; Sattler, Andreas; Häckl, W.; Krottenthalerc, P.; Grabolla, T.; Richter, Hans; Ammon, Wilfried von

doi:10.1016/j.mssp.2006.01.039

Cited by 6 publications

(9 citation statements)

References 15 publications

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“…This is in good agreement with the observation that the concentration of oxygen lost to unknown sources increases by RTA treatments. 20 The impact of oxygen within its usual variation is less pronounced for the same vacancy concentration, but the concentration of bound vacancies strongly depends on the concentration of interstitial oxygen. 5,6 Compared to other nucleation processes in silicon, which are in the range of 10 6 cm −3 s −1 , the nucleation rate of seed-SiO plates is a few orders of magnitude higher.…”

Section: H450mentioning

confidence: 99%

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Oxide Precipitation Via Coherent Seed-Oxide Phases

Kissinger

Dąbrowski

2008

J. Electrochem. Soc.

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Until now, oxide precipitation has been treated in theoretical models as homogeneous nucleation of incoherent SiO x precipitates. In view of the higher interface energy of an incoherent precipitate, one should also consider the possibility of having coherent precipitation. The key role of VO 2 complexes for nucleation of oxide precipitates has already been demonstrated on a broad experimental basis. Ab initio calculations have shown that the agglomeration of VO 2 is energetically favorable. In this contribution, the bulk modulus and molecular volume of nVO 2 clusters, named here seed-SiO 2 , are determined and an analytical nucleation model is developed. In a second step, a more advanced model is developed based on a monolayered agglomeration of VO 2 complexes on ͕100͖ planes, named here seed-SiO, and the heterogeneous nucleation of amorphous SiO 2 ͑a-SiO 2 ͒ at these plates. The advanced model is regarded as the more plausible nucleation path because the free energy is decreased stepwise.Until now, models for homogeneous nucleation of oxide precipitates have been based on nucleation of incoherent SiO x particles. These models provide feasible results only if the strain of the growing nuclei is relieved by the emission of interstitials or the absorption of vacancies ͑see, e.g., Ref. 1͒. These models are in agreement with the well-known precipitation enhancement by vacancy supersaturation and the amorphous or cristobalite structure of precipitates observed in various transmission electron microscopy investigations. A more-advanced model treats the incorporation of vacancies and oxygen into incoherent precipitates independently. 2 Another more-advanced model of incoherent nucleation also incorporates the segregation of interstitials to the precipitate nuclei. 3 It is assumed that part of the generated self-interstitials is incorporated into the growing oxide precipitate instead of being emitted into the host matrix. This would modify the composition of SiO x toward lower x with decreasing temperature. The disadvantage of interstitial-based models is that interstitial supersaturation in most practically applicable cases of crystal pulling or rapid thermal annealing ͑RTA͒ treatment is of negligible impact on nucleation. In view of the higher interface energy of incoherent precipitates, we are considering here the possibility of having coherent precipitation.Nucleation of oxide precipitates usually takes place below 1000°C. This is a temperature range where the majority of vacancies are bound to oxygen by forming VO 2 complexes. 2,4 In an earlier publication, we have demonstrated on a broad experimental basis the key role of these VO 2 complexes for nucleation of oxide precipitates. 5 We have shown that the agglomeration of VO 2 is energetically favorable and developed a model for an intermediate coherent seed-SiO 2 phase. Seed-SiO 2 is a SiO 2 polymorph which does not exist outside silicon. Its structure has been obtained from ab initio calculation of the coherent agglomeration of VO 2 complexes. The lattice structur...

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Section: H450mentioning

confidence: 99%

“…This effect has recently been recognized in different ways. 19,20 For this purpose, a second precursor phase consisting of monolayered agglomeration of VO 2 complexes on ͕100͖ planes is assumed and modeled by ab initio calculations. This phase, named here seed-SiO 2 ͑Fig.…”

Section: ͓10͔mentioning

confidence: 99%

Oxide Precipitation Via Coherent Seed-Oxide Phases

Kissinger

Dąbrowski

2008

J. Electrochem. Soc.

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“…In an experiment related to these regions, no impact of this pattern on the LID could be found. [ 43 ] Unfortunately, the usually applied methods to measure the BMD density have a low detection efficiency [ 44–46 ] and typically only about 10% of the existent BMDs become visible, that is, 90% of the oxygen clusters remain invisible. [ 45 ] It should also be noted that in nitrogen‐doped CZ silicon crystals the discrepancy between the concentrations of visible and invisible oxygen clusters is much smaller.…”

Section: Discussion Of the Asi–sii Defect Modelmentioning

confidence: 99%

“…[ 43 ] Unfortunately, the usually applied methods to measure the BMD density have a low detection efficiency [ 44–46 ] and typically only about 10% of the existent BMDs become visible, that is, 90% of the oxygen clusters remain invisible. [ 45 ] It should also be noted that in nitrogen‐doped CZ silicon crystals the discrepancy between the concentrations of visible and invisible oxygen clusters is much smaller. [ 45 ] In addition, the BMD measurement is typically made after oxygen precipitate growth treatments like two‐step annealing at, for example, 800 and 1000 °C for several hours.…”

Section: Discussion Of the Asi–sii Defect Modelmentioning

confidence: 99%

“…[ 45 ] It should also be noted that in nitrogen‐doped CZ silicon crystals the discrepancy between the concentrations of visible and invisible oxygen clusters is much smaller. [ 45 ] In addition, the BMD measurement is typically made after oxygen precipitate growth treatments like two‐step annealing at, for example, 800 and 1000 °C for several hours. Hence the BMD measurements represent mainly the oxygen precipitates which grow under those special conditions.…”

Section: Discussion Of the Asi–sii Defect Modelmentioning

confidence: 99%

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TheA_Si–Si_iDefect Model of Light‐Induced Degradation (LID) in Silicon: A Discussion and Review

Lauer

Peh

Schulze

et al. 2022

Physica Status Solidi (a)

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The ASi–Sii defect model as one possible explanation for light‐induced degradation (LID) in typically boron‐doped silicon solar cells, detectors, and related systems is discussed and reviewed. Starting from the basic experiments which led to the ASi–Sii defect model, the ASi–Sii defect model (A: boron, or indium) is explained and contrasted to the assumption of a fast‐diffusing so‐called “boron interstitial.” An LID cycle of illumination and annealing is discussed within the conceptual frame of the ASi–Sii defect model. The dependence of the LID defect density on the interstitial oxygen concentration is explained within the ASi–Sii defect picture. By comparison of electron paramagnetic resonance data and minority carrier lifetime data related to the assumed fast diffusion of the “boron interstitial” and the annihilation of the fast LID component, respectively, the characteristic EPR signal Si‐G28 in boron‐doped silicon is related to a specific ASi–Sii defect state. Several other LID‐related experiments are found to be consistent with an interpretation by an ASi–Sii defect.

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Characterizing and modeling the evolution of silicon oxide precipitates during thermal cycles

Nicolaï

Burle

Serafino³

et al. 2013

Journal of Crystal Growth

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Combination of optical measurement and precipitation theory to overcome the obstacles of detection limits

Cited by 6 publications

References 15 publications

Oxide Precipitation Via Coherent Seed-Oxide Phases

Oxide Precipitation Via Coherent Seed-Oxide Phases

TheA_Si–Si_iDefect Model of Light‐Induced Degradation (LID) in Silicon: A Discussion and Review

Characterizing and modeling the evolution of silicon oxide precipitates during thermal cycles

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Combination of optical measurement and precipitation theory to overcome the obstacles of detection limits

Cited by 6 publications

References 15 publications

Oxide Precipitation Via Coherent Seed-Oxide Phases

Oxide Precipitation Via Coherent Seed-Oxide Phases

TheASi–SiiDefect Model of Light‐Induced Degradation (LID) in Silicon: A Discussion and Review

Characterizing and modeling the evolution of silicon oxide precipitates during thermal cycles

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TheA_Si–Si_iDefect Model of Light‐Induced Degradation (LID) in Silicon: A Discussion and Review