Combinatorial investigation of (Ti1−xNbx)2AlC

Scabarozi, T. H.; Gennaoui, C.; Roche, J.; Flemming, T.; Wittenberger, K.; Hann, P.; Adamson, B.; Rosenfeld, A.; Barsoum, Michel W.; Hettinger, J. D.; Lofland, S. E.

doi:10.1063/1.3207748

Cited by 12 publications

(8 citation statements)

References 27 publications

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“…However, in light of the difficulty in synthesizing the MAX-nitrides by reactive sputtering, as well as the relative ease with which the MAX carbides can be grown by other sputtering techniques, there has been very little interest in employing reactive sputtering for synthesis of MAX carbides. Only a few unpublished attempts [108] have been made.…”

Section: Reactive Sputteringmentioning

confidence: 99%

“…However, Ti is much more prone to resputtering by Ar than W; resulting in Ti-deficient films [131,132]. For MAX phases containing heavy M and/or A elements, resputtering by inert gas neutrals may be relevant and could possibly explain why some initial attempts [108,133] at synthesizing Ta-Al-C MAX-phase thin films were not successful, despite the fact that Ta 2 AlC, Ta 3 AlC 2 , and Ta 4 AlC 3 all exist in bulk form (see section…”

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confidence: 99%

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The M+1AX phases: Materials science and thin-film processing

et al. 2010

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This article is a critical review of the M n+1 AX n phases ("MAX phases", where n =1, 2, or 3) from a materials science perspective. MAX phases are a class of hexagonal-structure ternary carbides and nitrides ("X") of a transition metal ("M") and an A-group element. The most well known are Ti 2 AlC, Ti 3 SiC 2 , and Ti 4 AlN 3 . There are ~60 MAX phases with at least 9 discovered in the last five years alone. What makes the MAX phases fascinating and potentially useful is their remarkable combination of chemical, physical, electrical, and mechanical properties, which in many ways combine the characteristics of metals and ceramics. For example, MAX phases are typically resistant to oxidation and corrosion, elastically stiff, but at the same time they exhibit high thermal and electrical conductivities and are machinable. These properties stem from an inherently nanolaminated crystal structure, with M n+1 X n slabs intercalated with pure A-element layers. The research on MAX phases has been accelerated by the introduction of thin-film processing methods.Magnetron sputtering and arc deposition have been employed to synthesize single-crystal material by epitaxial growth, which enables studies of fundamental materials properties. However, the surface-initiated decomposition of M n+1 AX n thin films into MX compounds at temperatures of 1000-1100 °C is much lower than the decomposition temperatures typically reported for the corresponding bulk material. We also review the prospects for low-temperature synthesis, which is essential for deposition of MAX phases onto technologically important substrates. While deposition of MAX phases from the archetypical Ti-Si-C and Ti-Al-N systems typically require synthesis temperatures of ~800 °C, recent results have demonstrated that V 2 GeC and Cr 2 AlC can be deposited at ~450 °C. Also, thermal spray of Ti 2 AlC powder has been used to produce thick coatings. We further treat progress in the use of first-principles calculations for predicting hypothetical MAX phases and their properties. Together with advances in processing and materials 3 analysis, this progress has led to recent discoveries of numerous new MAX phases such as Ti 4 SiC 3 , Ta 4 AlC 3 , and Ti 3 SnC 2 . Finally, important future research directions are discussed. These include charting the unknown regions in phase diagrams to discover new equilibrium and metastable phases, as well as research challenges in understanding their physical properties, such as the effects of anisotropy, impurities, and vacancies on the electrical properties, and unexplored properties such as superconductivity, magnetism, and optics. 4

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Section: Reactive Sputteringmentioning

confidence: 99%

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confidence: 99%

The M+1AX phases: Materials science and thin-film processing

et al. 2010

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“…2 Among the relatively few studies that exist on MAX-phase solid solutions in thin films, Scabarozi et al reported M-site solid solutions of (Ti,Nb) 2 AlC thin films. 17 From Raman scattering, they indirectly determined the elastic modulus, suggesting solid solution hardening. Furthermore, in thin films, the oxycarbide X-site solid solution Ti 2 Al(C,O) has been reported as a result of the incorporation of oxygen from the residual gas in a vacuum deposition process 18 or due to a reaction between TiC or Ti 2 AlC layers with an Al 2 O 3 substrate.…”

Section: Introductionmentioning

confidence: 99%

Phase-stabilization and substrate effects on nucleation and growth of (Ti,V)n+1GeCn thin films

Kerdsongpanya

Buchholt

Tengstrand

et al. 2011

Journal of Applied Physics

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and Per Eklund, Phase-stabilization and substrate effects on nucleation and growth of (Ti,V)(n+1)GeC(n) thin films, 2011, Journal of Applied Physics, (110) Phase-pure epitaxial thin films of (Ti,V) 2 GeC have been grown onto Al 2 O 3 (0001) substrates via magnetron sputtering. The c lattice parameter is determined to be 12.59 Å , corresponding to a 50=50 Ti=V solid solution according to Vegard's law, and the overall (Ti,V):Ge:C composition is 2:1:1 as determined by elastic recoil detection analysis. The minimum temperature for the growth of (Ti,V) 2 GeC is 700 C, which is the same as for Ti 2 GeC but higher than that required for V 2 GeC (450 C). Reduced Ge content yields films containing (Ti,V) 3 GeC 2 and (Ti,V) 4 GeC 3 . These results show that the previously unknown phases V 3 GeC 2 and V 4 GeC 3 can be stabilized through alloying with Ti. For films grown on 4H-SiC(0001), (Ti,V) 3 GeC 2 was observed as the dominant phase, showing that the nucleation and growth of (Ti,V) n þ 1 GeC n is affected by the choice of substrate; the proposed underlying physical mechanism is that differences in the local substrate temperature enhance surface diffusion and facilitate the growth of the higher-order phase (Ti,V) 3 GeC 2 compared to (Ti,V) 2 GeC.

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“…Numerous other MAX phase materials have been deposited using magnetron sputtering [7][8][9][10][11][12][13][14] including Cr 2 AlC [15][16][17][18][19][20][21][22][23].…”

Section: Introductionmentioning

confidence: 99%

A combinatorial comparison of DC and high power impulse magnetron sputtered Cr2AlC

Field

Carlsson

Eklund

et al. 2014

Surface and Coatings Technology

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Abstract. Using a combinatorial approach, Cr, Al and C have been deposited onto sapphire wafer substrates by High Power Impulse Magnetron Sputtering (HiPIMS) and DC magnetron sputtering. X-ray photoelectron spectroscopy, X-ray absorption spectroscopy and X-ray diffraction were employed to determine the composition and microstructure of the coatings and confirm the presence of the Cr 2 AlC MAX phase within both coatings. One location in both the DCMS and HiPIMS coatings contained only MAX phase Cr 2 AlC.The electrical resistivity was also found to be nearly identical at this location and close to that reported from the bulk, indicating that the additional energy in the HiPIMS plasma was not required to form high quality MAX phase Cr 2 AlC.

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Combinatorial investigation of (Ti1−xNbx)2AlC

Cited by 12 publications

References 27 publications

The M+1AX phases: Materials science and thin-film processing

The M+1AX phases: Materials science and thin-film processing

Phase-stabilization and substrate effects on nucleation and growth of (Ti,V)n+1GeCn thin films

A combinatorial comparison of DC and high power impulse magnetron sputtered Cr2AlC

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