Combinatorial studies of Zn-Al-O and Zn-Sn-O transparent conducting oxide thin films

Perkins, John D.; Cueto, J. A. del; Alleman, J.; Warmsingh, C.; Keyes, B. M.; Gedvilas, L. M.; Parilla, Philip A.; To, Bobby; Readey, Dennis W.; Ginley, David S.

doi:10.1016/s0040-6090(02)00205-5

Cited by 127 publications

(88 citation statements)

References 34 publications

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“…[18] These semiconductors are characterized by their unique electron transport properties, i.e., the absence of the Hall voltage sign double anomaly, which is commonly observed for existing amorphous semiconductors, [19] and large mobilities (e.g., Hall electron mobility >10 cm 2 V ±1 s ±1 ) comparable to those of the corresponding crystalline materials. [20] These features distinguish amorphous oxide semiconductors from conventional covalent amorphous semiconductors.…”

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confidence: 98%

A p‐Type Amorphous Oxide Semiconductor and Room Temperature Fabrication of Amorphous Oxide p–n Heterojunction Diodes

et al. 2003

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confidence: 98%

A p‐Type Amorphous Oxide Semiconductor and Room Temperature Fabrication of Amorphous Oxide p–n Heterojunction Diodes

et al. 2003

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“…53. This measurement system was then applied 208 to investigate the properties of ZnO alloyed with SnO 2 , in compositions along the ZnO-SnO 2 tie line. Two local maxima in conductivity were reported, for Zn/Sn ratios of 2:1 and 1:1, corresponding to the formation of the amorphous compositions Zn 2 SnO 4 and ZnSnO 3 ; both phases showed good transmission ($80%).…”

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confidence: 99%

Applications of high throughput (combinatorial) methodologies to electronic, magnetic, optical, and energy-related materials

Green

Takeuchi

Hattrick‐Simpers

2013

Journal of Applied Physics

227

189

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High throughput (combinatorial) materials science methodology is a relatively new research paradigm that offers the promise of rapid and efficient materials screening, optimization, and discovery. The paradigm started in the pharmaceutical industry but was rapidly adopted to accelerate materials research in a wide variety of areas. High throughput experiments are characterized by synthesis of a "library" sample that contains the materials variation of interest (typically composition), and rapid and localized measurement schemes that result in massive data sets. Because the data are collected at the same time on the same "library" sample, they can be highly uniform with respect to fixed processing parameters. This article critically reviews the literature pertaining to applications of combinatorial materials science for electronic, magnetic, optical, and energy-related materials. It is expected that high throughput methodologies will facilitate commercialization of novel materials for these critically important applications. Despite the overwhelming evidence presented in this paper that high throughput studies can effectively inform commercial practice, in our perception, it remains an underutilized research and development tool. Part of this perception may be due to the inaccessibility of proprietary industrial research and development practices, but clearly the initial cost and availability of high throughput laboratory equipment plays a role. Combinatorial materials science has traditionally been focused on materials discovery, screening, and optimization to combat the extremely high cost and long development times for new materials and their introduction into commerce. Going forward, combinatorial materials science will also be driven by other needs such as materials substitution and experimental verification of materials properties predicted by modeling and simulation, which have recently received much attention with the advent of the Materials Genome Initiative. Thus, the challenge for combinatorial methodology will be the effective coupling of synthesis, characterization and theory, and the ability to rapidly manage large amounts of data in a variety of formats. V C 2013 AIP Publishing LLC. [http://dx

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“…Such effect can be attributed to the Burstein-Moss shift brought about by increasing carrier concentrations. 43,44 The Burstein-Moss shift due to metal cation doping has been widely reported on many TCOs such as ZTO, 8,9 aluminiumdoped ZTO, 45 and aluminium-doped ZnO. 46 Moreover, a large band gap increase (up to $1 eV) has also been reported in MOCVD ZnO, when the growth temperature is reduced from 500 to 200 C; this was attributed to the increase in extended localization in the conduction band and valence band as the films become amorphous.…”

Section: -mentioning

confidence: 99%

“…22 Various deposition techniques, such as sol-gel, 23,24 atomic layer deposition (ALD), 25,26 metal organic chemical vapour deposition (MOCVD), 27 and pulsed laser deposition (PLD), 21,28 have been reported for ZTO, however, rf or dc magnetron sputtering is most commonly used. [6][7][8][9][10]20,[29][30][31][32] Ceramic ZTO targets with at. % of Zn: Sn of either 1:1 or ).…”

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Optimisation of amorphous zinc tin oxide thin film transistors by remote-plasma reactive sputtering

Niang

Cho

Heffernan

et al. 2016

Journal of Applied Physics

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The influence of the stoichiometry of amorphous zinc tin oxide (a-ZTO) thin films used as the semiconducting channel in thin film transistors (TFTs) is investigated. A-ZTO has been deposited using remote-plasma reactive sputtering from zinc:tin metal alloy targets with 10%, 33%, and 50% Sn at. %. Optimisations of thin films are performed by varying the oxygen flow, which is used as the reactive gas. The structural, optical, and electrical properties are investigated for the optimised films, which, after a post-deposition annealing at 500 °C in air, are also incorporated as the channel layer in TFTs. The optical band gap of a-ZTO films slightly increases from 3.5 to 3.8 eV with increasing tin content, with an average transmission ∼90% in the visible range. The surface roughness and crystallographic properties of the films are very similar before and after annealing. An a-ZTO TFT produced from the 10% Sn target shows a threshold voltage of 8 V, a switching ratio of 108, a sub-threshold slope of 0.55 V dec−1, and a field effect mobility of 15 cm2 V−1 s−1, which is a sharp increase from 0.8 cm2 V−1 s−1 obtained in a reference ZnO TFT. For TFTs produced from the 33% Sn target, the mobility is further increased to 21 cm2 V−1 s−1, but the sub-threshold slope is slightly deteriorated to 0.65 V dec−1. For TFTs produced from the 50% Sn target, the devices can no longer be switched off (i.e., there is no channel depletion). The effect of tin content on the TFT electrical performance is explained in the light of preferential sputtering encountered in reactive sputtering, which resulted in films sputtered from 10% and 33% Sn to be stoichiometrically close to the common Zn2SnO4 and ZnSnO3 phases.

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Combinatorial studies of Zn-Al-O and Zn-Sn-O transparent conducting oxide thin films

Cited by 127 publications

References 34 publications

A p‐Type Amorphous Oxide Semiconductor and Room Temperature Fabrication of Amorphous Oxide p–n Heterojunction Diodes

A p‐Type Amorphous Oxide Semiconductor and Room Temperature Fabrication of Amorphous Oxide p–n Heterojunction Diodes

Applications of high throughput (combinatorial) methodologies to electronic, magnetic, optical, and energy-related materials

Optimisation of amorphous zinc tin oxide thin film transistors by remote-plasma reactive sputtering

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