Combinatorial study of the structural, optical, and electrical properties of low temperature deposited Cd1-Zn Te (0 ≤ x ≤ 1) thin films by MOCVD

Kartopu, Giray; Fan, Qiulin; Oklobia, Ochai; Irvine, S.J.C.

doi:10.1016/j.apsusc.2020.148452

Cited by 13 publications

(9 citation statements)

References 36 publications

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“…Firstly, thermal annealing or heat treatment at specific temperatures modifies the surface of CdZnTe thin films, and also reduces the number of surface defects. 100 Secondly, Only suitable for the growth of single-layered epitaxial films.…”

Section: Effect Of Thermal and Chloride Treatments And Variation In Z...mentioning

confidence: 99%

CdZnTe thin films as proficient absorber layer candidates in solar cell devices: a review

Sharma,

Chuhadiya,

Kamlesh

et al. 2023

Energy Adv.

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Section: Effect Of Thermal and Chloride Treatments And Variation In Z...mentioning

confidence: 99%

CdZnTe thin films as proficient absorber layer candidates in solar cell devices: a review

Sharma,

Chuhadiya,

Kamlesh

et al. 2023

Energy Adv.

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“…[64] Focusing on chalcogenidebased solar cells, synthesized by combinatorial methods, there exist several works reporting the employment of sputtering, [69][70][71][72][73][74][75][76][77][78][79] a lower amount of articles report the use of thermal evaporation [80][81][82][83] and CBD, [66,84,85] and there are also reports describing the use of spray coating, [68,86] PLD, [87] and CVD. [88] The experimental setups required for adapting both PVD and CM techniques for the deposition of combinatorial samples are discussed in a review by McGinn. [65] Independent of the deposition techniques, there are two main strategies for creating thin-film combinatorial samples.…”

Section: Preparation Of Combinatorial Samplesmentioning

confidence: 99%

“…Kartopu et al also studied the solid solution of (Cd,Zn)Te synthesized by combinatorial metalorganic CVD in order to evaluate the possibility to apply these layers as top cell absorbers in tandem devices. [ 88 ] The obtained samples were characterized by several techniques allowing to establish the main morphological, optical, electrical, and electronic properties of the (Cd,Zn)Te solid solutions, defining the main issues that limit the device efficiency while increasing the Zn content and proposing possible solutions in order to overcome these issues.…”

Section: Combinatorial Analysis Of Chalcogenide‐based Thin‐film Pv Te...mentioning

confidence: 99%

Combinatorial Analysis Methodologies for Accelerated Research: The Case of Chalcogenide Thin‐Film Photovoltaic Technologies

et al. 2022

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One of the fastest ways for the discovery, understanding, development, and further optimization of new complex materials is the application of combinatorial analysis methodologies, which have already shown impressive results for different organic and inorganic materials, leading to the fast development of different scientific fields and industrial applications. However, in the case of thinfilm materials for optoelectronic devices and, in particular, for second-generation photovoltaic (PV) devices, the application of combinatorial analysis is still quite uncommon with a desultory rather than systematic application. The present review discusses the main constraints for the application of combinatorial analysis to thin-film materials with a focus on chalcogenide compounds and different strategies to overcome them. Special attention is paid to the requirements for the preparation of graded thin films, characterization, and analysis of the results, providing different hints for the implementation of high-quality combinatorial analysis. Finally, an overview of the currently published results in the field of chalcogenide thin-film PV technologies is presented, showing the relevance of the combinatorial approach for boosting the development not only of this promising PV technology, but also of other optoelectronic devices based on complex materials and multilayered structures.

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“…[1][2][3][4][5][6] The operation of photodiodes is based on the conversion of electromagnetic signals within the ultraviolet-visible-near-infrared (UV-vis-NIR) spectral range bandgap of CdZnTe in the range of 1.46-2.2 eV is defined by the Zn content and allows efficient operation of these detectors at room temperature. [32][33][34][35] Depending on the stoichiometric composition, CdZnTe crystals exhibit p-or n-type conductivity within a wide range of specific resistivity values between 10 and 10 11 Ω cm. [32,[35][36][37] CdZnTe can also be successfully employed in different UV-vis-NIR photodetectors with advanced radiation resistance.…”

Section: Introductionmentioning

confidence: 99%

“…[32][33][34][35] Depending on the stoichiometric composition, CdZnTe crystals exhibit p-or n-type conductivity within a wide range of specific resistivity values between 10 and 10 11 Ω cm. [32,[35][36][37] CdZnTe can also be successfully employed in different UV-vis-NIR photodetectors with advanced radiation resistance.…”

Section: Introductionmentioning

confidence: 99%

A High‐Detectivity, Fast‐Response, and Radiation‐Resistant TiN/CdZnTe Heterojunction Photodiode

Solovan

Mostovyi

Parkhomenko

et al. 2022

Advanced Optical Materials

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Silicon is the most commonly employed optoelectronic material, thanks to its high performance, long lifetime, and economic viability. [7,8] However, some fields of photodiodes' possible applications require additional features besides the excellent performance characteristics provided by conventional silicon photodiodes. [9,10] Rapid development of commercial and scientific space programs and large-scale nuclear safety efforts in radioactively contaminated areas presupposes the development of next-generation radiation-resistant optoelectronic materials and devices. [11][12][13][14][15][16] It is known that wide bandgap II-VI compound semiconductors possess a noticeably higher radiation resistance compared to their established commercially available counterparts Ge, Si, and III-V compounds. [17][18][19] For instance, the development of CdTe-base optoelectronic devices has been an active research field for years motivated by the demand for improved radiation hardness. [20][21][22][23] However, CdTe still exhibits only moderate radiation hardness that needs to be improved further to achieve reliable operation in harsh environments. [24,25] It has been shown that Cd 1−x Zn x Te solid solutions (also referred to as CdZnTe) possess much higher radiation resistance than CdTe. [26][27][28][29] As such, CdZnTe is commonly used as the active material for X-and γ-ray detectors. [30,31] The large A novel high-performance ultraviolet-visible-near-infrared (300-820 nm) heterojunction photodiode based on radiation-resistant semiconductor materials is proposed. A titanium nitride (TiN) "window" layer is deposited via magnetron sputtering onto a cadmium zinc telluride (CdZnTe) solid solution single crystal. The TiN/CdZnTe heterojunction photodiodes concurrently reveal an outstanding detectivity, response time, and linear dynamic range outperforming similar heterojunction photodiodes and photodetectors, based on photoactive inorganic compound semiconductor materials. Moreover, the added feature of the proposed heterojunction photodiodes is their excellent radiation resistance, experimentally demonstrated under short impulse proton irradiation (170 keV) with an accumulated fluence of 2 × 10 12 proton cm −2 . This unusual synergy of high performance and advanced radiation resistance of the TiN/CdZnTe photodiodes provides a unique platform for operation in space or radioactively contaminated environments.

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Combinatorial study of the structural, optical, and electrical properties of low temperature deposited Cd1-Zn Te (0 ≤ x ≤ 1) thin films by MOCVD

Cited by 13 publications

References 36 publications

CdZnTe thin films as proficient absorber layer candidates in solar cell devices: a review

CdZnTe thin films as proficient absorber layer candidates in solar cell devices: a review

Combinatorial Analysis Methodologies for Accelerated Research: The Case of Chalcogenide Thin‐Film Photovoltaic Technologies

A High‐Detectivity, Fast‐Response, and Radiation‐Resistant TiN/CdZnTe Heterojunction Photodiode

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