In principle, they convert optical electromagnetic signals into electrical signals and reveal a linear dependence of the photocurrent on the light intensity.Currently, perovskite photodiodes based on various new synthesized materials have been developed, which in terms of responsivity and detectivity to incident light are close to commercially available photo diodes. [8][9][10][11] Radiation resistance of perovskite solar cells has attracted much attention recently and it was tested in a wide range of proton energies from 150 keV up to 68 MeV with accumulated fluences up to 10 14 protons cm −2 . [12][13][14][15][16] Interestingly the radiation resistance of hybrid perovskite materials vastly surpasses that of well-established elementary semiconductors Ge, Si, and even outperforms the relatively radiation resistant inorganic compound semiconductors such as GaAs and CdTe. [12,13,17,18] This indicates that optoelectronic and photovoltaic devices based on perovskite materials have huge potential for application in the space industry and radioactively contaminated terrestrial regions.So far, only Xiong et al. [19] reported on radiation hardness of perovskite photodiodes based on conventional low-stability methyl ammonium lead iodide CH 3 NH 3 PbI 3 perovskite active This work reports, for the first time, on radiation resistance of state-of-the-art multicomponent Cs 0.04 Rb 0.04 (FA 0.65 MA 0.35 ) 0.92 Pb(I 0.85 Br 0.14 Cl 0.01 ) 3 perovskite photodiodes, tested under high-intensity pulsed 170 keV proton irradiation with fluence up to 10 13 protons cm −2 . The studied photodiodes demonstrate record radiation resistance among reported analogous optoelectronic devices. Specifically, it is shown that the proton irradiation with the fluence of 2 × 10 12 protons cm −2 even leads to a slight improvement in the photodiode parameters. Nonetheless, a large fluence of 10 13 protons cm −2 deteriorates photodiode parameters on average by only 25% with respect to that of the as-prepared devices. The revealed high-performance and advanced radiation hardness demonstrate the huge application potential of lightweight and low-cost solution-processed perovskite optoelectronic devices in sensing and communication networks operating under harsh space conditions.

Silicon is the most commonly employed optoelectronic material, thanks to its high performance, long lifetime, and economic viability. [7,8] However, some fields of photodiodes' possible applications require additional features besides the excellent performance characteristics provided by conventional silicon photodiodes. [9,10] Rapid development of commercial and scientific space programs and large-scale nuclear safety efforts in radioactively contaminated areas presupposes the development of next-generation radiation-resistant optoelectronic materials and devices. [11][12][13][14][15][16] It is known that wide bandgap II-VI compound semiconductors possess a noticeably higher radiation resistance compared to their established commercially available counterparts Ge, Si, and III-V compounds. [17][18][19] For instance, the development of CdTe-base optoelectronic devices has been an active research field for years motivated by the demand for improved radiation hardness. [20][21][22][23] However, CdTe still exhibits only moderate radiation hardness that needs to be improved further to achieve reliable operation in harsh environments. [24,25] It has been shown that Cd 1−x Zn x Te solid solutions (also referred to as CdZnTe) possess much higher radiation resistance than CdTe. [26][27][28][29] As such, CdZnTe is commonly used as the active material for X-and γ-ray detectors. [30,31] The large A novel high-performance ultraviolet-visible-near-infrared (300-820 nm) heterojunction photodiode based on radiation-resistant semiconductor materials is proposed. A titanium nitride (TiN) "window" layer is deposited via magnetron sputtering onto a cadmium zinc telluride (CdZnTe) solid solution single crystal. The TiN/CdZnTe heterojunction photodiodes concurrently reveal an outstanding detectivity, response time, and linear dynamic range outperforming similar heterojunction photodiodes and photodetectors, based on photoactive inorganic compound semiconductor materials. Moreover, the added feature of the proposed heterojunction photodiodes is their excellent radiation resistance, experimentally demonstrated under short impulse proton irradiation (170 keV) with an accumulated fluence of 2 × 10 12 proton cm −2 . This unusual synergy of high performance and advanced radiation resistance of the TiN/CdZnTe photodiodes provides a unique platform for operation in space or radioactively contaminated environments.

Flexible and printed perovskite solar cells (PSCs) fabricated on lightweight plastic substrates have many excellent potential applications in emerging new technologies including wearable and portable electronics, the internet of things, smart buildings, etc. To fabricate flexible and printed PSCs, all of the functional layers of devices should be processed at low temperatures. Tin oxide is one of the best metal oxide materials to employ as the electron transport layer (ETL) in PSCs. Herein, the synthesis and application of SnO2 quantum dots (QDs) to prepare the ETL of flexible and printed PSCs are demonstrated. SnO2 QDs are synthesized via a solvothermal method and processed to obtain aqueous and printable ETL ink solutions with different QD concentrations. PSCs are fabricated using a slot-die coating method on flexible plastic substrates. The solar cell performance and spectral response of the obtained devices are characterized using a solar simulator and an external quantum efficiency measurement system. The ETLs prepared using 2 wt% SnO2 QD inks are found to produce devices with a high average power conversion efficiency (PCE) along with a 10% PCE for a champion device. The results obtained in this work provide the research community with a method to prepare fully solution-processed SnO2 QD-based inks that are suitable for the deposition of SnO2 ETLs for flexible and printed PSCs.

Nano-crystalline and amorphous films of graphitized carbon were deposited by electron-beam evaporation of bulk graphite. Structural properties and the size of graphite nanoclusters (L ≈ 1.2–5 nm) in the films were determined from the analysis of their Raman spectra. Electrical properties of the bulk nano-crystalline graphite reference sample and the deposited graphitic carbon films were measured by means of the Hall effect technique within the temperature range from 290 to 420 K. The electrical conductivity σ and Hall mobility μH of all samples exhibited exponential temperature dependences, indicating on the non-metallic behavior. Electrical properties of the amorphous graphitic carbon thin films, deposited at low substrate temperatures (620 and 750 K) were analyzed in the scope of the hopping charge transport mechanism via localized states. We have shown that the charge transport in the bulk and thin film (920 K) nano-crystalline graphite samples is carried out via the tunneling and thermionic emission over potential barriers at the grain boundaries.This paper contributes towards better understanding of coupling between structural and electrical properties of graphitic carbon thin films.

Perovskites are a promising class of semiconductor materials, which are being studied intensively for their applications in emerging new flexible optoelectronic devices. In this paper, device manufacturing and characterization of quasi-interdigitated back-contact perovskite solar cells fabricated on flexible substrates are studied. The photovoltaic parameters of the prepared flexible quasi-interdigitated back-contact perovskite solar cells (FQIBC PSCs) are obtained for the front- and rear-side illumination options. The dependences of the device’s open-circuit potential and short-circuit current on the illumination intensity are investigated to determine the main recombination pathways in the devices. Spectral response analysis of the devices demonstrates that the optical transmission losses can be minimized when FQIBC PSCs are illuminated from the front-side. Optoelectronic simulations are used to rationalize the experimental results. It is determined that the obtained FQIBC PSCs have high surface recombination losses, which hinder the device performance. The findings demonstrate a process for the fabrication of flexible back-contact PSCs and provide some directions for device performance improvements.