Combined effects of residual stress and microstructure on degradation of Cu thin films on Si

Lee, Junhee; Park, Sanghun; Kim, Kangsan; Jo, Haechan; Lee, Dongwoo

doi:10.1016/j.tsf.2022.139607

Cited by 3 publications

(4 citation statements)

References 48 publications

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“…where E 0 is the initial energy of the Cu atom; E b is the binding energy of copper material; E Ar is the impinging energy of the argon ion; γ = 4m g m s /(m g + m s ) 2 ; m s and m g represent the masses of Cu and Ar atoms, respectively. The polar emission angles of sputtered atoms were postulated to obey Yamamura's angular distribution [38], which can be expressed as…”

Section: Mc-md Simulation Of the Transport Of Sputtered Cu Atomsmentioning

confidence: 99%

“…Copper has been widely used in the metallization of Si ultra-large scale integrated (Si-ULSI) devices, due to its high resistance to electromigration and low electrical resistivity [1,2]. Epitaxial Cu films on Si substrates have been extensively studied due to their widespread applications in photo detectors, chemical sensors, and the electrochemical reduction of CO 2 to fuels [3][4][5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

“…Many methods have been employed to fabricate Cu/Si films, including thermal evaporation [14], electrodeposited [15], electron beam evaporation [16], and magnetron sputtering [17][18][19]. In these epitaxial growth technologies, magnetron sputtering deposition has overriding advantages, such as high film/substrate adhesion, low deposition temperature and flexible process control [2,17,18]. The essence of the process control is that the variation in the transport process and deposition behaviors of sputtered atoms with sputtering process parameters results in the microstructural variation of the sputtered film [20].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Influence of Sputtering Pressure on the Micro-Topography of Sputtered Cu/Si Films: Integrated Multiscale Simulation

et al. 2023

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In this work, an integrated multiscale simulation of magnetron sputtering epitaxy was conducted to study the effect of sputtering pressure on the surface micro-topography of sputtered Cu/Si films. Simulation results indicated that, as the sputtering pressure increased from 0.15 to 2 Pa, the peak energy of the incident energy distribution gradually decreased from 2 to 0.2 eV, which might be mainly due to the gradual decrease in the proportion of deposited Cu atoms whose energy ranged from 2 to 30 eV; the peak angle of the incident polar angle distribution increased from 25° to 35°, which might be attributed to the gradual thermalization of deposited Cu atoms; the growth mode of Cu film transformed from the two-dimensional layered mode to the Volmer-Weber mode. The transformation mechanism of growth mode was analyzed in detail. A comprehensive analysis of the simulation results indicated that incident energy ranging from 2 to 30 eV and incident angle between 10° and 35° might be conducive to the two-dimensional layered growth of sputtered Cu films. This work proposes an application-oriented modeling approach for magnetron sputtering epitaxy.

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Section: Mc-md Simulation Of the Transport Of Sputtered Cu Atomsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Influence of Sputtering Pressure on the Micro-Topography of Sputtered Cu/Si Films: Integrated Multiscale Simulation

et al. 2023

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“…Magnetron sputtering technology has been generally employed to prepare semiconductor, metal, magnetic, and optical films [ 1 , 2 , 3 , 4 ] due to its low deposition temperature, high film/substrate adhesion, and environmental friendliness. Recently, thin-film bulk acoustic resonators (FBARs), smart sensors and highly integrated metal-oxide-semiconductor field-effect transistors (MOSFETs) have received considerable attention for their potential application prospects in the fields of communication, smart homes, and digital technology.…”

Section: Introductionmentioning

confidence: 99%

On the Microcrystal Structure of Sputtered Cu Films Deposited on Si(100) Surfaces: Experiment and Integrated Multiscale Simulation

et al. 2023

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Sputtered Cu/Si thin films were experimentally prepared at different sputtering pressures and characterized using X-ray diffraction (XRD) and an atomic force microscope (AFM). Simultaneously, an application-oriented simulation approach for magnetron sputtering deposition was proposed in this work. In this integrated multiscale simulation, the sputtered atom transport was modeled using the Monte Carlo (MC) and molecular dynamics (MD) coupling method, and the deposition of sputtered atoms was simulated using the MD method. This application-oriented simulation approach was used to simulate the growth of Cu/Si(100) thin films at different sputtering pressures. The experimental results unveiled that, as the sputtering pressure decreased from 2 to 0.15 Pa, the surface roughness of Cu thin films gradually decreased; (111)-oriented grains were dominant in Cu thin films and the crystal quality of the Cu thin film was gradually improved. The simulation results were consistent with the experimental characterization results. The simulation results revealed that the transformation of the film growth mode from the Volmer–Weber growth mode to the two-dimensional layered growth mode resulted in a decrease in the surface roughness of Cu thin films; the increase in the amorphous compound CuSix and the hcp copper silicide with the decrease in the sputtering pressure was responsible for the improvement of the crystal quality of the Cu thin film. This work proposed a more realistic, integrated simulation scheme for magnetron sputtering deposition, providing theoretical guidance for the efficient preparation of high-quality sputtered films.

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The impact of titanium alloying on altering nanomechanical properties and grain structures of sputter-deposited cobalt for electromigration reliability enhancement

Chen,

Lin,

Huang

et al. 2024

Journal of Alloys and Compounds

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Combined effects of residual stress and microstructure on degradation of Cu thin films on Si

Cited by 3 publications

References 48 publications

Influence of Sputtering Pressure on the Micro-Topography of Sputtered Cu/Si Films: Integrated Multiscale Simulation

Influence of Sputtering Pressure on the Micro-Topography of Sputtered Cu/Si Films: Integrated Multiscale Simulation

On the Microcrystal Structure of Sputtered Cu Films Deposited on Si(100) Surfaces: Experiment and Integrated Multiscale Simulation

The impact of titanium alloying on altering nanomechanical properties and grain structures of sputter-deposited cobalt for electromigration reliability enhancement

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