2016
DOI: 10.1016/j.electacta.2016.05.011
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Combined Electrochemical and Electron Spectroscopic Investigations of the Surface Oxidation of TiAlN HPPMS Hard Coatings

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Cited by 20 publications
(20 citation statements)
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“…Assuming a model of perfectly separated layers, the observed behavior can be explained as a stepwise formation of first a TiAl(O,N) growth region due to inward migration of oxygen and then the establishment of a top layer of fully oxidized Ti(IV). This interpretation is also supported by recent investigation on the electrochemical oxidation of TiAlN, where the electrochemical oxidation of TiAlN could be described by a reactive migration mechanism as well . The relevance of the oxygen inward migration for the oxidation is further highlighted by the Al/Ti ratios reported in Table : though preponderant aluminum outward migration is expected in the case of the high temperature TiAlN oxidation, the Al/Ti ratios remained rather constant and only slight enrichment of aluminum was observed at 800 K …”
Section: Resultssupporting
confidence: 74%
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“…Assuming a model of perfectly separated layers, the observed behavior can be explained as a stepwise formation of first a TiAl(O,N) growth region due to inward migration of oxygen and then the establishment of a top layer of fully oxidized Ti(IV). This interpretation is also supported by recent investigation on the electrochemical oxidation of TiAlN, where the electrochemical oxidation of TiAlN could be described by a reactive migration mechanism as well . The relevance of the oxygen inward migration for the oxidation is further highlighted by the Al/Ti ratios reported in Table : though preponderant aluminum outward migration is expected in the case of the high temperature TiAlN oxidation, the Al/Ti ratios remained rather constant and only slight enrichment of aluminum was observed at 800 K …”
Section: Resultssupporting
confidence: 74%
“…The gas pressure inside the chamber was 0.46 Pa and the Ar:N 2 ratio was set to 4:1. The structure of the samples was characterized by X‐Ray Diffraction and a random structure was found . The density of the TiAlN was around 4.8 g cm −3 and the stoichiometry was Ti 0.2 Al 0.3 N 0.5 as determined by an Ar + sputtered sample measured by XPS.…”
Section: Methodsmentioning
confidence: 99%
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“…After deposition of TiAlN by HPPMS, a certain amount of uncontrolled surface oxidation takes place within the reactor and during subsequent exposure to ambient atmosphere . Electrochemical oxidation, on the other hand, leads to controlled oxidation of the near-surface region, as shown by Wiesing et al By means of the electrochemical oxidation of TiAlN, the oxynitridic TiAl­(O,N) near-surface region converts into an oxide layer consisting of amorphous TiO 2 and Al 2 O 3 phases. This is due to the irreversible oxidation of Ti­(III) to Ti­(IV) and the nitridic nitrogen conversion to molecular N 2 .…”
Section: Resultsmentioning
confidence: 99%
“…The oxidation of TiAlN can also be carried out by electrochemical techniques. Wiesing et al showed that electrochemical oxidation of TiAlN leads to the formation of several nanometer-thin semiconducting surface films with a composition of (TiO 2 ) x (Al­(OH) 3 ) y . In the process, an irreversible exchange of nitrogen in TiAl­(O,N) and inward migration of oxygen occurs, with the subsequent release of nitrogen …”
Section: Introductionmentioning
confidence: 99%