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It is well known that surface energy differences thermodynamically stabilize nanocrystalline γ-Al2O3 over α-Al2O3. Here, through correlative ab initio calculations and advanced material characterization at the nanometer scale, we demonstrate that the metastable phase formation of nanocrystalline TiAlN, an industrial benchmark coating material, is crystallite size-dependent. By relating calculated surface and volume energy contributions to the total energy, we predict the chemical composition-dependent phase boundary between the two metastable solid solution phases of cubic and wurzite Ti1−xAlxN. This phase boundary is characterized by the critical crystallite size d critical. Crystallite size-dependent phase stability predictions are in very good agreement with experimental phase formation data where x was varied by utilizing combinatorial vapor phase condensation. The wide range of critical Al solubilities for metastable cubic Ti1−xAlxN from x max = 0.4 to 0.9 reported in literature and the sobering disagreement thereof with DFT predictions can at least in part be rationalized based on the here identified crystallite size-dependent metastable phase formation. Furthermore, it is evident that predictions of critical Al solubilities in metastable cubic TiAlN are flawed, if the previously overlooked surface energy contribution to the total energy is not considered.

We investigate the effect of continuous vs. periodically interrupted plasma exposure during cathodic arc evaporation on the elastic modulus as well as the residual stress state of metastable cubic TiAlN coatings. Nanoindentation reveals that the elastic modulus of TiAlN grown at floating potential with continuous plasma exposure is 7%–11% larger than for coatings grown with periodically interrupted plasma exposure due to substrate rotation. In combination with X-ray stress analysis, it is evident that the elastic modulus is governed by the residual stress state. The experimental dependence of the elastic modulus on the stress state is in excellent agreement with ab initio predictions. The macroparticle surface coverage exhibits a strong angular dependence as both density and size of incorporated macroparticles are significantly lower during continuous plasma exposure. Scanning transmission electron microscopy in combination with energy dispersive X-ray spectroscopy reveals the formation of underdense boundary regions between the matrix and TiN-rich macroparticles. The estimated porosity is on the order of 1% and a porosity-induced elastic modulus reduction of 5%–9% may be expected based on effective medium theory. It appears reasonable to assume that these underdense boundary regions enable stress relaxation causing the experimentally determined reduction in elastic modulus as the population of macroparticles is increased.

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Structural defects in transition metal dichalcogenide (TMDC) monolayers (ML) play a significant role in determining their (opto)electronic properties, triggering numerous efforts to control defect densities during material growth or by post-growth treatments. Various types of TMDC have been successfully deposited by MOCVD (metal-organic chemical vapor deposition), which is a wafer-scale deposition technique with excellent uniformity and controllability. However, so far there are no findings on the extent to which the incorporation of defects can be controlled by growth parameters during MOCVD processes of TMDC. In this work, we investigate the effect of growth temperature and precursor ratio during MOCVD of tungsten diselenide (WSe2) on the growth of ML domains and their impact on the density of defects. The aim is to find parameter windows that enable the deposition of WSe2 ML with high crystal quality, i.e. a low density of defects. Our findings confirm that the growth temperature has a large influence on the crystal quality of TMDC, significantly stronger than found for the W to Se precursor ratio. Raising the growth temperatures in the range of 688 °C to 791 °C leads to an increase of the number of defects, dominating photoluminescence (PL) at low temperatures (5.6 K). In contrast, an increase of the molar precursor ratio (DiPSe/WCO) from 1,000 up to 100,000 leads to less defect-related PL at low temperatures.