2011
DOI: 10.1186/1556-276x-6-68
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Combined plasma gas-phase synthesis and colloidal processing of InP/ZnS core/shell nanocrystals

Abstract: Indium phosphide nanocrystals (InP NCs) with diameters ranging from 2 to 5 nm were synthesized with a scalable, flow-through, nonthermal plasma process at a rate ranging from 10 to 40 mg/h. The NC size is controlled through the plasma operating parameters, with the residence time of the gas in the plasma region strongly influencing the NC size. The NC size distribution is narrow with the standard deviation being less than 20% of the mean NC size. Zinc sulfide (ZnS) shells were grown around the plasma-synthesiz… Show more

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Cited by 26 publications
(22 citation statements)
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“…Interestingly, when simultaneously doped with both n -type and p -type carriers, these so-called codoped n , p -Si QDs display sub-band-gap photoluminescence energy, indicative of donor–acceptor pair recombination. , This phenomenon has only been demonstrated in ion-beam implantation samples and may be a desirable path for nonthermal plasma synthesis to access lower energy IR wavelengths in Si-based QDs. Binary and alloy III–V InP, GaP, and In x Ga 1– x P were recently prepared by us through nonthermal methods and, like the original report of gas-phase InP synthesis, achieved visible-emitting QDs. The phosphine (PH 3 ) and trimethylindium­(gallium) (In­(CH 3 ) 3 and Ga­(CH 3 ) 3 ) precursors used in these approaches begs the question of whether other readily available semiconductor precursor gases such as arsine (AsH 3 ) could be used to generate lower band gap InAs QDs.…”
Section: Synthesis Of Colloidal Infrared Qdsmentioning
confidence: 98%
“…Interestingly, when simultaneously doped with both n -type and p -type carriers, these so-called codoped n , p -Si QDs display sub-band-gap photoluminescence energy, indicative of donor–acceptor pair recombination. , This phenomenon has only been demonstrated in ion-beam implantation samples and may be a desirable path for nonthermal plasma synthesis to access lower energy IR wavelengths in Si-based QDs. Binary and alloy III–V InP, GaP, and In x Ga 1– x P were recently prepared by us through nonthermal methods and, like the original report of gas-phase InP synthesis, achieved visible-emitting QDs. The phosphine (PH 3 ) and trimethylindium­(gallium) (In­(CH 3 ) 3 and Ga­(CH 3 ) 3 ) precursors used in these approaches begs the question of whether other readily available semiconductor precursor gases such as arsine (AsH 3 ) could be used to generate lower band gap InAs QDs.…”
Section: Synthesis Of Colloidal Infrared Qdsmentioning
confidence: 98%
“…Gresback et al used the same approach as Anthony et al but replaced TMGa with trimethylindium (In­(CH 3 ) 3 or TMIn) and NH 3 with PH 3 to synthesize InP nanocrystals in a 13.56 MHz rf plasma . The precursor gases were heavily diluted in Ar and the feed gas contained Ar, H 2 , PH 3 , and TMIn in the 90:17:3:1 ratio.…”
Section: Synthesis Of Compound Semiconductor Nanocrystalsmentioning
confidence: 99%
“…Inset shows the effect of ZnS shell thickness on the PL intensity. Reproduced with permission from ref . Copyright 2011 Springer.…”
Section: Synthesis Of Compound Semiconductor Nanocrystalsmentioning
confidence: 99%
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“…Semiconductor NCs provide size-tunable optical and electrical properties, based on quantum confinement of charge carriers within them, high surface-to-volume ratios, and other attributes that have led to the development of a new generation of materials and devices [ 7 - 10 ]. Because of their various unique properties, there has been considerable interest in the synthesis of high-quality III-V compound NCs [ 11 , 12 ]. InSb has the smallest effective mass, the narrowest bandgap, and the highest intrinsic electron mobility of III-V semiconductors.…”
Section: Introductionmentioning
confidence: 99%