Characterization of ultrathin InSb nanocrystals film deposited on SiO2/Si substrate

Abstract

Recently, solid-phase recrystallization of ultrathin indium antimonide nanocrystals (InSb NCs (films grown on SiO2/Si substrate is very attractive, because of the rapid development of thermal annealing technique. In this study, the recrystallization behavior of 35 nm indium antimonide film was studied. Through X-ray diffraction (XRD) analysis, it is demonstrated that the InSb film is composed of nanocrystals after high temperature rapid thermal annealing. Scanning electron microscopy shows that the film has a smooth surface and is composed of tightly packed spherical grains, the average grain size is about 12.3 nm according to XRD results. The optical bandgap of the InSb NCs film analyzed by Fourier Transform infrared spectroscopy measurement is around 0.26 eV. According to the current-voltage characteristics of the InSb NCs/SiO2/p-Si heterojunction, the film has the rectifying behavior and the turn-on voltage value is near 1 V.

Annealing of Sputtered InSb Thin Film for III-V Semiconductor Devices Applications

“…Diffraction peaks which assigned to be (111), (220), and (311) orientations of InSb with a zinc-blend structure at 2θ values of 23.73⁰, 39.2⁰, and 46.32⁰. These values are very close to previous works [6], [8], [10], [12], [13].…”

“…The average grain sizes were 16.2, 26.4, 30.5 nm for InSb thin films annealed at 300⁰, 390⁰ and 450⁰, respectively. These average grain sizes are larger than those annealed by RTA in [8], [12]. The average grain size of InSb film increases as the annealing temperature increases, because enhanced crystallinity of the film reduces the FWHM of the (111) peak.…”

Mach–Zehnder Interferometer-Based Integrated Terahertz Temperature Sensor

“…The suggested fabrication steps of the proposed structure are schematically shown in Fig. 6, which involve: (1) Deposition of a PMMA layer on a SOI substrate; (2) The groove could be formed by the electron-beam lithography (EBL) technique; (3) Deposition of InSb film with the ratio frequency magnetron sputtering technique [38]; (4) The PMMA layer could be dissolved in acetone and complete the proposed structure. However, a certain level of fabrication error is inherent in the process, i.e.…”

Subwavelength InSb-based Slot wavguides for THz transport: concept and practical implementations

“…Si, SiO 2 and InSb) and their corresponding synthesis techniques are known to be fully compatible with the standards in the CMOS process31. The proposed fabrication process starts with the deposition of InSb and SiO 2 films on a Si substrate respectively with the ratio frequency magnetron sputtering32 and PECVD (plasma enhanced chemical vapor deposition)33 techniques. A rectangular groove on the upper SiO 2 surface is then patterned by using the electron-beam lithography (EBL).…”